RD70HHF1

RD70HHF1 MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

FEATURES

High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25 °C 150 W Pin Input power Zg=Zl=50 Ω 5 W ID Drain current - 20 A Tch Channel Temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance junction to case 1.0 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage V DS=12V, IDS=1mA 1.5 - 4.5 V Pout Output power f=30MHz ,V DD=12.5V 70 80 - W ηD Drain efficiency Pin=3.5W,Idq=1.0A 55 60 - % Load VSWR tolerance V DD=15.2V,Po=70W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. OUTLINE DRAWING 9.6+/-0.3 3.3+/-0.2 4-C2 10.0+/-0.3 R1.6+/-0.15 24.0+/-0.6 18.5+/-0.3 5.0+/-0.3 25.0+/-0.3 4.5+/-0.7 6.2+/-0.7 0.1 +0.05 -0.01 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 120 160 200 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds-Ids CHARACTERISTICS 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=6V Vgs=5.7V Vgs=5.4V Vgs=5.1V Vgs=4.5V Vgs=4.8V Vgs=4.2V Vds VS. Ciss CHARACTERISTICS 100 150 200 250 300 0 1 02 03 0 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 200 300 400 500 01 0 2 0 3 0 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 01 0 2 0 3 0 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 01234567 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 100 01234 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=30MHz Vdd=12.5V Idq=1A Pin-Po CHARACTERISTICS 01 0 2 0 3 0 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=30MHz Vdd=12.5V Idq=1A Po ηｄ Ｉｄｄ Gp Vdd-Po CHARACTERISTICS 100 120 2468 1 0 1 2 1 4 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=30MHz Pin=3.5W Idq=1A Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 01234567 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Vgs-gm CHARACTORISTICS 0123456 Vgs(V) gm(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=30MHz) 100 33uF,50V 68pF*3 220pF micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm Note:Board material-teflon substrate C1:100pF, 0.022uF, 0.1uF in parallel Pout 330uF,50V L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire Vgg Vdd Pin Dimensions:mm 180pF 4.5 10K OHM L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm

330 OHM

1 OHM

C2:470uF*2 in parallel L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire 68pF*3 47pF 47pF

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 5.28-j20.08 0.77-j0.22 Po=97W, Vdd=12.5V,Pin=3.5W f=30MHz Zout f=30MHz Zin Zo=10Ω

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 MITSUBISHI ELECTRIC REV.5 2 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!