RD60HUF1_06 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. OUTLINE DRAWING 9.6+/-0.3 3.3+/-0.2 4-C2 10.0+/-0.3 R1.6+/-0.15 24.0+/-0.6 18.5+/-0.3 5.0+/-0.3 25.0+/-0.3 4.5+/-0.7 6.2+/-0.7 0.1 +0.05 -0.01 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm

FEATURES

High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets. RoHS COMPLIANT RD60HUF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 150 W Pin Input power Zg=Zl=50Ω 20 W ID Drain current - 20 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance junction to case 1.0 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS ( Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zerogate voltage drain current VDS=17V, VGS=0V - - 400 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.1 1.45 1.8 V Pout Output power f=520MHz ,VDD=12.5V 60 65 - W ηD Drain efficiency Pin=10W, Idq=2.5A 50 55 - % Load VSWR tolerance VDD=15.2V,Po=60W(PinControl) f=520MHz,Idq=2.5A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 100 120 140 160 180 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 150 200 250 300 350 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 100 150 200 250 300 350 400 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 02 46 8 10 Vds(V) Ids(A) Ta=+25°C Vgs=3.1V Vgs=2.8V Vgs=2.5V Vgs=2.2V Vgs-Ids CHARACTERISTICS 01234 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 10 20 30 40 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=520MHz Vdd=12.5V Idq=2.5A Po ̞̳̳ Gp Pin-Po CHARACTERISTICS 100 0 5 10 15 20 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=12.5V Idq=2.5A Vdd-Po CHARACTERISTICS 46 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=10W Idq=2.5A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 234 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=520MHz) 8.2kOHM 15pF 100 micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Note:Board material-Teflon substrateC1:2200pF 10uf in parallel RF-OUT L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 100OHM Vgg Vdd RF-in 56pF Dimensions:mm 18pF 18pF 15pF 24pF 56pF 100 9.1kOHM C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 520MHz RD60HUF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=440MHz Zout f=440MHz Zin f=300MHz Zin f=300MHz Zout Zo=10Ω Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 RoHS Compliance, Silicon MOSFET Pow er Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making se miconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!