RD60HUF1

RD60HUF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

FEATURES

High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain tosource voltage 30 V VGSS Gateto source voltage +/-20 V Pch Channel dissipation Tc=25 °C 150 W Tj Junction Temperature 175 °C Tstg Storage temperature -40 to +175 °C Rth-c Thermal resistance Junction to case 1.0 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS ( T c = 2 5°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zerogate voltage drain current V DS=17V, VGS=0V - - 400 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage V DS=12V, IDS=1mA 1.1 1.45 1.8 V Pout Output power f=520MHz ,V DD=12.5V 60 65 - W ηD Drain efficiency Pin=10W, Idq=2.5A 50 55 - % Load VSWR tolerance V DD=15.2V,Po=60W(PinControl) Idq=2.5A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. OUTLINE DRAWING 10.0+/-0.3 4-C23.3+/-0.2 R1.6+/-0.15 18.0+/-0.3 24.0+/-0.6 5.0+/-0.3 25.0+/-0.3 +0.05 -0.010.1 6.2+/-0.7 4.5+/-0.7 PIN 1.Drain 2.Source 3.Gate UNIT:mm

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 100 120 140 160 180 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 150 200 250 300 350 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 100 150 200 250 300 350 400 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=3.1V Vgs=2.8V Vgs=2.5V Vgs=2.2V Vgs-Ids CHARACTERISTICS 01234 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 10 20 30 40 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=520MHz Vdd=12.5V Idq=2.5A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 100 0 5 10 15 20 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=12.5V Idq=2.5A Vdd-Po CHARACTERISTICS 4 6 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=10W Idq=2.5A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 234 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT 18/10pF 9.1KOHM 100 220pF 10pF RD60HUF1 Dimensions:mm 56pF RF-IN VddVgg 100OHM L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RF-OUT C1:2200pF,10uF in parallel Note:Board material-Teflon substrate Micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm 100 2pF 18/10pF 8.2kOHM C3L1 C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L2:3Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 10/5/8pF 5/22pF

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions Zo=10Ω f=300MHz Zout f=520MHz Zin f=520MHz Zout f=300MHz Zin f=440MHz Zout f=440MHz Zin

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD60HUF1 Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!