RD45HMF1

RD45HMF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications.

FEATURES

High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency: 50%typ. APPLICATION For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25 °C 125 W Pin Input power Zg=Zl=50 Ω 25 W ID Drain current - 15 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance junction to case 1.2 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25 °C UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zerogate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage V DS=12V, IDS=1mA 1.0 - 3.0 V Pout Output power f=900MHz ,V DD=12.5V 45 50 - W ηD Drain efficiency Pin=15W,Idq=2.0A 45 50 - % Load VSWR tolerance V DD=15.2V,Po=45W(PinControl) Idq=2.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. OUTLINE DRAWING 9.6+/-0.3 R1.6+/-0.15 25.0+/-0.3 18.5+/-0.3 24.0+/-0.6 5.0+/-0.3 4.5+/-0.7 6.2+/-0.7 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm 3.3+/-0.2 0.1 4-C2 10.0+/-0.32 +0.05 -0.01

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 120 160 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds VS. Ciss CHARACTERISTICS 100 150 200 250 300 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 200 300 400 500 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 01234 Vgs(V) Ids(A) Ta=+25°C Vds=10V Vds-Ids CHARACTERISTICS 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=3.7V Vgs=2.5V Vgs=3.4V Vgs=3.1V Vgs=2.8V Vgs=2.2V Vgs=4V

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vdd-Po CHARACTERISTICS 100 4 6 8 10 12 14 Vdd(V) Po( W) Idd( A ) Po Idd Ta=25°C f=900MHz Pin=15W Idq=2A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 1.5 2.5 3.5 Vgs(V) Ids (A ) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Pin-Po CHARACTE RISTICS 25 30 35 40 45 Pin( dBm) P o(dBm ) , Gp(dB) , I dd(A) 100 ηd(%) Ta=+25°C f=900MHz Vdd=12.5V Idq=2A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 0 5 10 15 20 25 Pin( W) P out(W) , Idd(A) 100 120 140 ηd(%) Po ηd Idd Ta=25°C f=900MHz Vdd=12.5V Idq=2A

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=900MHz) 9.1KOHM 100 56pF 5pF 2pF 5/5pF 5pF 2pF 3pF f=900MHz Dimensions:mm 56pF RF-IN VddVgg 100OHM L1:1Turns,I.D3mm,D1.5mm silver plateted copper wire 330uF,50V RF-OUT C1:2200pF*2 in parallel Note:Board material-Teflon substrate Micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm 100 1pF5/5pF 5/5pF L1100pF 8.2kOHM

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions Zo=10Ω f=900MHz Zin f=900MHz Zout

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 MITSUBISHI ELECTRIC REV.2 7 Apr. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!