RD30HUF1

RD30HUF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES

High power gain: Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ. APPLICATION For output stage of high power amplifiers in UHF band mobile radio sets. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage 30 V VGSS Gate to source voltage +/-20 V Pch Channel dissipation Tc=25 °C 75 W Pin Input power Zg=Zl=50 Ω 7.5 W Tj Junction temperature 175 °C Tstg Storage temperature -40 to +175 °C Rth-c Thermal resistance Junction to case 2.0 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS ( T c = 2 5°C , UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current V DS=17V, VGS=0V - - 200 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage V DS=12V, IDS=1mA 1.3 1.8 2.3 V Pout Output power f=520MHz,V DD=12.5V 30 35 - W ηD1 Drain efficiency Pin=3.0W,Idq=1.0A 50 55 - % Load VSWR tolerance V DD=15.2V,Po=30W(PinControl) Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. OUTLINE DRAWING 5.1+/-0.5 R1.62.3+/-0.3 4-C1 6.6+/-0.3 0.10 2.8+/-0.3 18.0+/-0.3 22.0+/-0.3 7.6+/-0.3 7.2+/-0.5 PIN 1.Drain 2.Sourc e 3.Gate UNIT:mm

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 120 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 100 120 140 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=4.5V Vgs=4V Vgs=3.5V Vgs=3V Vgs=2.5V Vgs=5V Vgs-Ids CHARACTERISTICS 012345 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 10 20 30 40 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=520MHz Vdd=12.5V Idq=1.0A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 02468 1 0 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=12.5V Idq=1.0A Vdd-Po CHARACTERISTICS 4 6 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=3W Icq=1.0A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 1.5 2.5 3.5 4.5 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS EQUIVALENT CIRCUIT(f=520MHz) 15pF 15/15pF L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire C3:2200pF,330uF in parallel C2:2200pF*2 in parallel L3 C3 8.2kOHM 7/5pF 15/5/7/15pF 100 Micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Note:Board material-Teflon substrateC1:2200pF,10uF in parallel RF-OUT L1:3Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 100OHM Vgg Vdd RF-IN 56pF Dimensions:mm RD30HUF1 15/5pF 56pF 100 9.1KOHM L2:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout F Zin Zout (MHz) (ohm) (ohm) Conditions f=520MHz Zout f=520MHz Zin f=480MHz Zin f=440MHz Zout f=480MHz Zout f=440MHz Zin Zo=10Ω

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD30HUF1 Silicon MOSFET Power Transistor,520MHz,30W RD30HUF1 MITSUBISHI ELECTRIC REV.1 14 MAY. 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!