RD20HMF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.

FEATURES

High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ. APPLICATION For output stage of high power amplifiers in 900MHz band OUTLINE DRAWING 5.1+/-0.5 R1.62.3+/-0.3 4-C1 6.6+/-0.3 0.10 2.8+/-0.3 18.0+/-0.3 22.0+/-0.3 7.6+/-0.3 7.2+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm Mobile radio sets. RoHS COMPLIANT RD20HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25°C 71.4 W Pin Input power Zg=Zl=50Ω 6 W ID Drain current - 6 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance junction to case 2.1 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25 °C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 5 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage VDS=12V, IDS=1mA 1.0 - 3.0 V Pout Output power f=900MHz ,VDD=12.5V 20 25 - W ηD Drain efficiency Pin=3.0W, Idq=1.0A 50 55 - % Load VSWR tolerance VDD=15.2V,Po=20W(PinControl) Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds-Ids CHARACTERISTICS 02 46 8 10 Vds(V) Ids(A) Ta=+25°C Vgs=4.5V Vgs=4V Vgs=3.5V Vgs=3V Vgs=2.5V Vgs=2V Vgs=5V Vds VS. Ciss CHARACTERISTICS 100 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 120 140 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vgs-Ids CHARACTERISTICS 01 2 3 45 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 20 25 30 35 40 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=900MHz Vdd=12.5V Idq=1.0A Po ̞̳̳ Gp Vdd-Po CHARACTERISTICS 4 6 8 101 21 4 Vdd(V) Po(W) Idd(A)Po Idd Ta=25°C f=900MHz Pin=3.0W Idq=1.0A Zg=ZI=50 ohm Pin-Po CHARACTERISTICS 01 2 3 4 5 6 Pin(W) Pout(W) , Idd(A) 100 120 ηd(%) Po ηd Idd Ta=25°C f=900MHz Vdd=12.5V Idq=1.0A

MITSUBISHI RF POWER MOS FET RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=900MHz) -5VSOT *%NN %NNTJMWFSQMBUFUFEDPQQFSXJSF Q' Q' Q'Q' NJDSPTUSJQMJOFXJEUI NN0). FS U NN /PUF#PBSENBUFSJBM5FGMPOTVCTUSBUF $Q' Q'JOQBSBMMFM 3'065 -5VSOT *%NN %NNTJMWFSQMBUFUFEDPQQFSXJSF 7HH 7EE 3'JO %JNFOTJPOTNN 0). $Q' JOQBSBMMFM $Q' Q'JOQBSBMMFM -.)[ 3%).' RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zout f=900MHz Zin Zo=10Ω Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA) 'SFR <.)[> NBH BOH NBH BOH NBH BOH NBH BOH 4 4 4 4

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 RoHS Compliance, Silicon MOSFET Pow er Transistor,900MHz,20W RD20HMF1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to gi ve due consideration to safety when making y our circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!