RD12MVP1

RD12MVP1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç INDEX MARK [Gate] 1.8+/-0.1 0.7+/-0.1 Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source (b)(b) 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 NOTES: 1. ( ) Typical value UNIT:mm (d) 0.2+/-0.05 TOP VIEW SIDE VIEW BOTTOM VIEW SIDE VIEW (3.6) (4.5) Standoff = max 0.05 DETAIL A DETAIL A

DESCRIPTION

RD12MVP1 is a MOS FET type transistor çççççççççççççççççççççççççççççççççççç specifically designed for VHF RF power ççççççççççççççççççççççççççççççççççççç amplifiers applications.

FEATURES

High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz High Efficiency: 55%min. (175MHz) No gate protection diode APPLICATION For output stage of high power amplifiers in çççççççççççççççççççççççççççççççççççç VHF band mobile radio sets. RoHS COMPLIANT RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to Source Voltage V GS=0V 60 V VGSS Gate to Source Voltage V DS=0V -5 to +20 V ID Drain Current 4.0 A Pin Input Power Zg=Zl=50 Ω 1.0 W Pch Channel Dissipation Tc=25 °C 125 W Tj Junction Temperature +150 °C Tstg Storage Temperature -40 to +125 °C Rthj-c Thermal Resistance Junction to Case 1.5 °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. IDSS Zero Gate Voltage Drain Current V DS=17V, VGS=0V - - 10 uA IGSS Gate to Source Leak Current V GS=10V, VDS=0V - - 1.0 uA VTH Gate Threshold Voltage V DS=12V, IDS=1mA 1.8 - 4.4 V Pout Output Power 10 12 - W ηD Drain Efficiency f=175MHz,VDD=7.2V Pin=0.5W,Idq=1.0A 55 57 - % VSWRT Load VSWR tolerance VDD=9.5V,Po=10W(Pin Control) f=175MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. çç OUTLINE DRAWINGç

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIE NT TE MPE RATURE 0 40 80 120 160 200 A MBIENT TEMPERA TURE Ta(deg:C.) CHANNEL DISSIPATION Pch(W On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) Vgs-Ids CHARACTE RISTICS 01234567 Vgs(V) Ids(A) Ta=+25°C Vds=10V Ids Vds VS. Ciss CHARACTE RISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTE RISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTE RISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 0123456789 Vds(V) Ids(A) Ta=+25°C Vgs=7.5V Vgs=6.5V Vgs=5.5V Vgs=4.5V

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz 0 5 10 15 20 25 30 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) ηd(%) Ta=+25°C f=175MHz Vdd=7.2V Idq =1.0A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTE RISTICS @f=175MHz 0.0 0.5 1.0 1.5 Pin( W) Pout(W) , Idd(A) ηd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=7.2V Idq=1.0A Vdd-Po CHARACTERISTICS @f=175MHz 468 1 0 1 2 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=175MHz Pin=0.6W Idq=1.0A Zg=ZI=50 ohm

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TEST CIRCUIT (f=175MHz) 47pF L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) WW RD12MVP1 14mm 9.5mm 24pF100pF 330pF RF-in 330pF VddVgg 19mm 4.7k Ohm 3mm9.5mm 3mm 22uF,50VC2 RF-out 19mm 54pF W:Line width=1.0mm L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter) C1,C2:2200pF Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm 175MHz 9mm 47pF 17mm 3.5mm

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç ç Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. Warning!