RD100HHF1

RD100HHF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

FEATURES

High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25 °C 176.5 W Pin Input power Zg=Zl=50 Ω 12.5 W ID Drain current - 25 A Tch Channel temperature - 175 °C Tstg Storage temperature - -40 to +175 °C Rth j-c Thermal resistance junction to case 0.85 °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS ( T c = 2 5°C UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zerogate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold voltage V DS=12V, IDS=1mA 1.5 - 4.5 V Pout Output power f=30MHz ,V DD=12.5V 100 110 - W ηD Drain efficiency Pin=7W, Idq=1.0A 55 60 - % Load VSWR tolerance V DD=15.2V,Po=100W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. OUTLINE DRAWING 9.6+/-0.3 3.3+/-0.2 4-C2 10.0+/-0.3 R1.6+/-0.15 24.0+/-0.6 18.5+/-0.3 5.0+/-0.3 25.0+/-0.3 4.5+/-0.7 6.2+/-0.7 0.1 +0.05 -0.01 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 120 160 200 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vds VS. Crss CHARACTERISTICS 01 0 2 0 3 0 Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 200 300 400 500 01 0 2 0 3 0 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 100 150 200 250 300 0 1 02 03 0 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 02468 1 0 Vds(V) Ids(A) Ta=+25°C Vgs=5.7V Vgs=5.4V Vgs=5.1V Vgs=4.8V Vgs=4.2V Vgs=6V Vgs=4.5V Vgs-Ids CHARACTERISTICS 01234567 Vgs(V) Ids(A) Ta=+25°C Vds=10V

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 0 1 02 03 04 0 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=30MHz Vdd=12.5V Idq=1A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 100 120 02468 1 0 Pin(W) Pout(W) , Idd(A) ηd(%) Po ηd Idd Ta=25°C f=30MHz Vdd=12.5V Idq=1A Vdd-Po CHARACTERISTICS 100 120 140 4 6 8 10 12 14 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 01234567 Vgs(V) Ids(A) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=30MHz) C4:15pF,18pF in parallel C3:68pF,82pF in parallel L4:3Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire C2:33uF*2,220pF in parallel 100 100 72/72/82pF 30/30pF 220/56pF 4.7OHM*2L3 82/220pF 0-50pF 0-50pF 110pF 270pF 20kOHM L3:4Turns,I.D10mm,D1.6mm P=3 silver plateted copper wire L2:10Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire 2.7kOHM*2 100OHM 4.5 220/56pF 0-110pF Dimensions:mm RF-IN VddVgg L1:7Turns,I.D10mm,D1.6mm P=2 silver plateted copper wire 330uF,50V RF-OUT C1:330pF*3,0.022uF in parallel Note:Board material-teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions f=30MHz Zout f=30MHz Zin Zo=10Ω

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 MITSUBISHI ELECTRIC REV.3 8 APRIL. 2004 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!