RD1004LS-SB5 SANYO | Alldatasheet
Document overview
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Technical content
Features
- High breakdown voltage (V RRM=400V).
- High reliability.
- Easy to be mounted, good heat dissipation.
- Fast reverse recovery time.
- Low noise at the time of reverse recovery. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 400 V Non-repetitive Peak Reverse Voltage V RSM 400 V Average Output Current IO 10 A R.M.S Forward Current IF(RMS) Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited 12 A Surge Forward Current IFSM Sine wave, 10ms single pulse 120 A Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 400 V Forward Voltage V F IF=10A 1.3 1.5 V Reverse Current I R VR=400V 100 μA Reverse Recovery Time trr1I F=10A, di / dt=100A/μs4 4 5 0 n s trr2I F=0.5A, IR=1A 17 ns Thermal Resistance Rth(j-c) Between the junction part and the case : smoothing current 6.25 °C / W N1809SA TK IM TC-00002177 SANYO Semiconductors DATA SHEET RD1004LS-SB5 www.semiconductor-sanyo.com/network Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode
No. A1615-2/3 Package Dimensions unit : mm (typ) 7510-001 3.5 7.2 16.0 16.1 3.6 10.0 0.9 1.2 14.0 0.75 4.5 2.80.6 2.4 2.552.55 1 2 3.2 0.7 1 : Cathode 2 : Anode SANYO : TO-220FI(LS)-SB 1.0 100 110 120 130 0.01 23 7 0.152 3 2 3 7 1.05 IF -- VF Forward V oltage, VF -- V Forward Current, IF -- A IFSM -- t Surge Forward Current, IFSM(Peak) -- A Time, t -- s Cj -- VR Junction Capacitance, Cj -- pF Reverse V oltage, VR -- V Current waveform 50Hz sine wave IS 20ms t 0.001 0.01 0.1 1.0 IT15210 IT15208 Ta=120 --40 0.1 1.0 2 3 57 2 103 57 2 100 f=100kHz IT15209 1003 57 Rth(j-c) -- t Transient Thermal Resistance Rth(j-c) -- °C / W Time, t -- s IT15211 0.001 0.012 537 2 0.1537 2 1.0537 2 10537 1.0
No. A1615-3/3 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2009. Specifi cations and information herein are subject to change without notice.