RD09MUP2

RD09MUP2_10 MITSUBISHI | Alldatasheet

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Technical content

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2

17 Aug 2010

ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INDEX MARK [Gate] 1.8+/-0.1 0.7+/-0.1 Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source (b)(b) 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 NOTES: 1. ( ) Typical value UNIT:mm (d) 0.2+/-0.05 TOP VIEW SIDE VIEW BOTTOM VIEW SIDE VIEW (3.6) (4.5) Standoff = max 0.05 DETAIL A DETAIL A

DESCRIPTION

R D 0 9 M U P 2 i s a M O S F E T t y p e t r a n s i s t o r specifically designed for UHF RF power amplifiers applications.

FEATURES

• High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
• High Efficiency: 50%min. (520MHz)
• Integrated gate protection diode APPLICATION For output stage of high power amplifiers in UHF band mobile radio sets. RoHS COMPLIANT RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 40 V VGSS Gate to source voltage Vds=0V -5 to +10 V ID Drain Current - 4.0 A Pin Input Power Zg=Zl=50 Ω 1.6 W Pch Channel dissipation Tc=25 °C 83 W Tj Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 1.5 °C/W SCHEMATIC DRAWING Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage V DS=12V, IDS=1mA 0.5 - 2.5 V Pout Output power 8 9 - W ηD Drain efficiency f=520MHz , VDD=7.2V Pin=0.8W,Idq=1.0A 50 - - % VSWRT Load VSWR tolerance VDD=9.5V,Po=8W(Pin Control) f=520MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change.

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vds-Ids CHARACTERISTICS 0123456789 Vds(V) Ids(A) Ta=+25°C Vg s=4.5V Vgs=4.0V Vg s=3.5V Vg s=3.0V Vgs-Ids CHARACTERISTICS 01234 Vgs(V) Ids(A),GM(S) Ta=+25°C Vds=10V Ids GM Vds VS. Ciss CHARACTERISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz CHANNEL DISSIPATION V S. AM BIENT TEM PERATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.) CHANNEL DISSIPATION Pch(W),,, On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) Free Air Vds VS. Coss CHARACTERISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=520MHz 0 5 10 15 20 25 30 35 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) ηd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq=1.0A Po ̞̳̳ Gp Pin-Po CHARACTERISTICS @f=520MHz Pin( W) Pout(W) , Idd(A) ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=1.0A Vdd-Po CHARACTERISTICS @f=520MHz 468 1 0 1 2 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=1.0W Idq=1.0A Zg=ZI=50 ohm

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT (f=520MHz) 520MHz Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm Note:Board material= glass-Epoxy Substrate C1,C2:2200pF W:Line width=1.0mm 19mm RF-out 22uF,50VC2 4.7K Ohm 14.5mm 3mm 5mm 19mm Vgg Vdd 330pF 330pF RF-in 5pF L 47pF 6mm 7mm RD09MUP2 W W 5pF L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) 33pF 3.5mm13mm 5pF 21mm

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor e appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o f Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximu m rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet.

Silicon RF Power Semiconductors RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. Trouble with semiconductors ma y lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. Keep safety first in your circuit designs ! - These materials are intended as a reference to assist our cu stomers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringem ent of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - All information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an aut horized Mitsubishi Semiconductor product distributor for the latest product informatio n before purchasing a product listed herein. T he information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay a ttention to information published by Mitsubish i Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electr ic Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - Mitsubishi Electric Corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi El ectric Corporation is necessary to reprin t or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a lice nse from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Elec tric Corporation or an authorized Mitsubishi Se miconductor product distri butor for further deta ils on these materials or the products contained therein. Notes regarding these materials