RD09MUP2

RD09MUP2 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç INDEX MARK [Gate] 1.8+/-0.1 0.7+/-0.1 Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source (b)(b) 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 NOTES: 1. ( ) Typical value UNIT:mm (d) 0.2+/-0.05 TOP VIEW SIDE VIEW BOTTOM VIEW SIDE VIEW (3.6) (4.5) Standoff = max 0.05 DETAIL A DETAIL A

DESCRIPTION

R D 0 9 M U P 2 i s a M O S F E T t y p e t r a n s i s t o r specifically designed for UHF RF power amplifiers applications.

FEATURES

High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 50%min. (520MHz) Integrated gate protection diode APPLICATION For output stage of high power amplifiers in UHF band mobile radio sets. RoHS COMPLIANT RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 40 V VGSS Gate to source voltage Vds=0V -5 to +10 V ID Drain Current - 4.0 A Pin Input Power Zg=Zl=50 Ω 1.6 W Pch Channel dissipation Tc=25 °C 83 W Tj Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 1.5 °C/W SCHEMATIC DRAWING Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage V DS=12V, IDS=1mA 0.5 - 2.5 V Pout Output power 8 9 - W ηD Drain efficiency f=520MHz , VDD=7.2V Pin=0.8W,Idq=1.0A 50 - - % VSWRT Load VSWR tolerance VDD=9.5V,Po=8W(Pin Control) f=520MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note: Above parameters, ratings, limits and conditions are subject to change. G S D

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS Vds-Ids CHARACTERISTICS 0123456789 Vds(V) Ids(A) Ta=+25°C Vgs=4.5V Vgs=4.0V Vgs=3.5V Vgs=3.0V Vgs-Ids CHARACTE RISTICS 01234 Vgs(V) Ids(A),GM(S) Ta=+25°C Vds=10V Ids GM Vds VS. Ciss CHARACTE RISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTE RISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz DRAIN DISSIPATION V S. AMBIENT TE MPE RATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.) CHANNEL DISSIPATION Pch(W On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) Vds VS. Coss CHARACTERISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=520MHz 0 5 10 15 20 25 30 35 Pin( dBm) Po(dBm) , Gp(dB) , Idd(A) ηd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq =1.0A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS @f=520MHz Pin( W) Pout(W) , Idd(A) ηd(%) Po ηd Idd Ta=25°C f=520MHz Vdd=7.2V Idq=1.0A Vdd-Po CHARACTERISTICS @f=520MHz 468 1 0 1 2 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=520MHz Pin=1.0W Idq=1.0A Zg=ZI=50 ohm

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TEST CIRCUIT (f=520MHz) 520MHz Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm Note:Board material= glass-Epoxy Substrate C1,C2:2200pF W:Line width=1.0mm 19mm RF-out 22uF,50VC2 4.7K Ohm 14.5mm 3mm 5mm 19mm Vgg Vdd 330pF 330pF RF-in 5pF L 47pF 6mm 7mm RD09MUP2 W W 5pF L:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) 33pF 3.5mm13mm 5pF 21mm

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD09MUP2 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W RD09MUP2 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç ç Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. Warning!