RD06HVF1-101

RD06HVF1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC

10 Jan 2006

OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

note(3) 1. 3± 0. 4 0. 62± 0. 2 :Copper of the ground work is exposed in case of frame separation. 2. 5 2. 5 3. 1± 0. 6 9. 5MAX note: (1)Torelance of no designation means typical value. Dimension in mm. (3) (2) :Dipping area 5deg 4. 5± 0. 5 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) 9. 1± 0. 7 0. 8± 0. 15 1. 2± 0. 4 3. 6± 0. 2 9± 0. 4 12. 3± 0. 6 12. 3MI N 4. 8MAX 3. 2± 0. 4 9. 3MI N 7. 5MI N RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES

High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V V VGSS Gate to source voltage Vds=0V +/- 20 V Pch Channel dissipation Tc=25°C 27.8 W Pin Input power Zg=Zl=50Ω 0.6 W ID Drain current A Tch Channel temperature 150 Tstg Storage temperature -40 to +150 Rth j-c Thermal resistance junction to case 4.5 °C/W Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS

(Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V uA IGSS Gate to source leak current VGS=10V, VDS=0V uA VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.9 4.9 V Pout Output power VDD=12.5V, Pin=0.3W, W ηD Drain efficiency f=175MHz, Idq=0.3A Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy Note : Above parameters , ratings , limits and conditions are subject to change.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION Pch(W) Vgs-Ids CHARACTERISTICS Vgs(V) Ids(A) Ta=+25°C Vds=10V Vds VS. Crss CHARACTERISTICS Vds(V) Crss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS Vds(V) Ids(A) Ta=+25°C Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=10V

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 Vgs(V) Ids(A),GM(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Vgs-gm CHARACTORISTICS 0.0 0.5 1.0 1.5 2.0 Vgs(V) gm(S) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Pin-Po CHARACTERISTICS Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 100 ηd(%) Ta=+25°C f=175MHz Vdd=12.5V Idq=0.3A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Pin(W) Pout(W) , Idd(A) 100 ηd(%) Po ηd Idd Ta=25°C f=175MHz Vdd=12.5V Idq=0.3A Vdd-Po CHARACTERISTICS Vdd(V) Po(W) Idd(A) Idd Ta=25°C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm Po

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS TEST CIRCUIT(f=175MHz) L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 10pF 30pF 5pF 9.1kOHM 100 micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Note:Board material-Teflon substrate C1:2200pF 10uF in parallel RF-OUT L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire 100OHM Vgg Vdd RF-IN 300pF Dimensions:mm 82pF 8.2kOHM C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 175MHz RD06HVF1 100 300pF L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f =175MH Zo f =135MHz Zo f=175MHz Zout* f=175MHz Zin* Zo=50ohm Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 175 4.25-j25.6 5.64-j1.05 Po=10W, Vdd=12.5V,Pin=0.3W

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.985 -18.8 34.407 165.9 0.008 76.2 0.826 -17.3 0.900 -50.4 30.427 143.3 0.021 59.4 0.767 -43.6 0.799 -74.4 24.979 126.1 0.029 43.2 0.677 -65.0 100 0.667 -109.6 15.565 100.7 0.032 27.3 0.547 -96.8 150 0.636 -129.0 10.953 85.1 0.032 23.1 0.523 -113.4 200 0.630 -140.1 8.194 73.7 0.029 25.3 0.528 -124.7 250 0.645 -148.2 6.528 63.9 0.027 34.5 0.561 -132.7 300 0.663 -155.0 5.315 55.2 0.027 49.1 0.588 -139.6 350 0.685 -160.7 4.437 47.4 0.031 61.8 0.622 -145.9 400 0.708 -165.9 3.771 39.9 0.039 71.0 0.657 -151.7 450 0.729 -170.8 3.233 33.2 0.048 75.8 0.686 -157.0 500 0.752 -175.4 2.826 26.8 0.059 77.9 0.715 -162.3 550 0.771 179.9 2.475 20.7 0.070 76.9 0.743 -167.6 600 0.789 175.4 2.186 15.2 0.083 76.1 0.763 -172.3 650 0.804 171.2 1.943 9.7 0.095 73.7 0.789 -177.3 700 0.819 166.9 1.738 4.6 0.108 71.0 0.804 178.1 750 0.834 162.6 1.560 0.0 0.120 68.1 0.820 173.5 800 0.842 158.5 1.410 -4.5 0.133 65.0 0.837 169.0 850 0.851 154.3 1.275 -8.7 0.145 61.6 0.847 164.8 900 0.859 150.3 1.160 -12.6 0.157 58.2 0.858 160.2 950 0.866 146.2 1.058 -16.9 0.167 54.5 0.869 155.7 1000 0.870 142.3 0.963 -20.0 0.179 51.0 0.876 151.8 S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 MITSUBISHI ELECTRIC OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning !