RD05MMP1

RD05MMP1 MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç

DESCRIPTION

RD05MMP1 is a MOS FET type transistor çççççççççççççççççççççççççççççççççççç specifically designed for UHF RF power ççççççççççççççççççççççççççççççççççççç amplifiers applications.

FEATURES

High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz High Efficiency: 43%min. (941MHz) No gate protection diode APPLICATION For output stage of high power amplifiers in ççç ççççççççççççççççççççççç 941MHz band mobile radio sets. RoHS COMPLIANT RD05MMP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 40 V VGSS Gate to source voltage Vds=0V -5 to +10 V Pch Channel dissipation Tc=25 °C 73 W Pin Input Power Zg=Zl=50 Ω 1.4 W ID Drain Current - 3 A Tch Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance Junction to case 1.7 °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNITSYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current V DS=17V, VGS=0V - - 10 uA IGSS Gate to source leak current V GS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage V DS=12V, IDS=1mA 0.5 - 2.5 V Pout Output power 5.5 6 - W ηD Drain efficiency f=941MHz , VDD=7.2V Pin=0.7W,Idq=1.0A 43 - - % VSWRT Load VSWR tolerance VDD=9.5V,Po=5.5W(Pin Control) f=941MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. INDEX MARK [Gate] 1.8+/-0.1 0.7+/-0.1 Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source (b)(b) 4.2+/-0.2 5.6+/-0.2 7.0+/-0.2 (c) 0.65+/-0.2 (a) 8.0+/-0.2 6.2+/-0.2 NOTES: 1. ( ) Typical value UNIT:mm (d) 0.2+/-0.05 TOP VIEW SIDE VIEW BOTTOM VIEW SIDE VIEW (3.6) (4.5) Standoff = max 0.05 DETAIL A DETAIL A OUTLINE DRAWINGç

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS DRAIN DISSIPATION V S. AMBIENT TE MPE RATURE 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(deg:C.) CHANNEL DISSIPATION Pch(W On PCB with Termal sheet and Heat-sink *PCB: Glass epoxy (t=0.8 mm) Thermal sheet: GELTEC COOH-4000(0.5) Vgs-Ids CHARACTE RISTICS 012345 Vgs(V) Ids(A),gm(S) Ta=+25°C Vds=10V Ids GM Vds-Ids CHARACTERISTICS 0123456789 Vds(V) Ids(A) Ta=+25°C Vgs=4.5V Vgs=4.0V Vgs=3.5V Vgs=3.0V Vgs=5.0V Vds VS. Ciss CHARACTERISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Ciss(pF) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 100 120 140 160 0 5 10 15 20 Vds(V) Coss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTE RISTICS 0 5 10 15 20 Vds(V) Crss(pF) Ta=+25°C f=1MHz

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=941MHz 5 1 01 52 02 53 03 5 Pin( dBm) Po(dBm) , Gp(dB) , Idd(A) ηd(%) Ta=+25°C f=941MHz Vdd=7.2V Idq =1.0A Po ηｄ Ｉｄｄ Gp Pin-Po CHARACTERISTICS @f=941MHz 0.0 0.5 1.0 1.5 Pin( W) Pout(W) , Idd(A) ηd(%)Po ηd Idd Ta=25°C f=941MHz Vdd=7.2V Idq=1.0A Vdd-Po CHARACTERISTICS @f=941MHz 468 1 0 1 2 Vdd(V) Po(W) Idd(A) Po Idd Ta=25°C f=941MHz Pin=0.7W Idq=1.0A Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 012345 Vgs(V) Ids(A),gm(S) Vds=10V Tc=-25~+75°C +25°C +75°C -25°C

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç TEST CIRCUIT (f=941MHz) 23.0mm 4pF 10pF 6pF 7.5mm WW RD05MMP1 1.0mm 1.5mm 10pF 120pF RF-in 120pF VddVgg 19mm 4.7k Ohm 1.0mm1.0mm 22uF,50VC2 RF-out 19mm 7pF W:Line width=1.0mm L1:24.4nH, Enameled wire 5Turns,D:0.23mm,1.37mm(outside diameter) C1,C2:100pF,1000pF in parallel Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm 941MHz 13mm 12pF 12pF L1 27.5mm

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç RD05MMP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) S11 S21 S12 S22

MITSUBISHI RF POWER MOS FET RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W RD05MMP1 MITSUBISHI ELECTRIC 1st Jun. 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ç Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. Warning!