RD0306T SANYO | Alldatasheet

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Technical content

Features

  • High breakdown voltage (V RRM=600V).
  • Fast reverse recovery time.
  • Low noise at the time of reverse recovery.
  • Low forward voltage (V F max=1.5V).
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 600 V Average Output Current IO 3A Surge Forward Current IFSM Sine wave 10ms, 1 cycle 40 A Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 600 V Forward Voltage V F IF=3A 1.2 1.5 V Reverse Current I R VR=600V 10 μA Reverse Recovery Time trr1I F=3A, di / dt=100A/μs4 0 5 0 n s trr2I F=0.5A, IR=1A 16 ns Thermal Resistance Rth(j-c) Junction -Case 6 °C / W O2809SC TK IM TC-00002159 SANYO Semiconductors DATA SHEET RD0306T www.semiconductor-sanyo.com/network Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode

No. A1573-2/3 Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-002 7003-001 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : No Contact 2 : Cathode 3 : Anode 4 : Cathode SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : No Contact 2 : Cathode 3 : Anode 4 : Cathode SANYO : TP-FA IF -- VF Forward Current, IF -- A IFSM -- t Surge Forward Current, IFSM(Peak) -- A Time, t -- s Cj -- VR Junction Capacitance, Cj -- pF Reverse V oltage, VR -- V 0.1 1.022 10 100 f=100kHz IT14717 0.01 23 7 0.152 3 2 7 1.05 IT14718 1002 3 573 57 3 57 Forward V oltage, VF -- V Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0.001 0.01 0.1 1.0 IT15092 Ta=150 --25 °C75 2000 600 IT15093 1000 100 0.1 1.0 0.01 0.001 500100 300 400 125°C Ta=150°C 100°C 75°C 50°C 25°C 100 125 0°C

No. A1573-3/3 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of October, 2009. Specifi cations and information herein are subject to change without notice.