RCA3054

RCA3054 GESS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

OL DEM 3875081 oo1z4u7n 49 I

3875081 G E SOLID STATE OE 17476 DO T- 33-7

General-Purpose Power Transistors eee RCA3054, RCA3055 File Number 618 : Silicon N-P-N ‘VERSAWATT Transistors Designed for Medium-Power Linear and Switching Service ° in Consumer, Automotive, and Industrial Applications Features: = Maximum safe-area-of-operation curves TERMINAL DESIGNATIONS = Low saturation voltages . . | High dissipation ratings — i Applications: cravat a © High-fidelity amplifiers or view ry © Power-switching circuits ‘wcecmee JEDEC TO-220A8 RCA3054 and RCA3055 are silicon n-p-n transistors intended for a wide variety of high-current applications. The construc tion of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. . ‘The VERSAWATT case has a proven thermal-cycle capability. This capability is assured by real-time quality controls in our manutacturing locations, The RCA30S4 and RCA30SS are ' supplied in the JEOEC TO-220AB straight-lead version of the package. They are also available on special order in a variety : of lead-form configurations. RCA3054 RCA3055 COLLECTOR-TO-BASE VOLTAGE. . 2. ws Veso v0 100 v COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With external base-to-emitter resistance (Reg) = 1002... Voentsus) oo 70 v With bole open ee ee ee Vczotwus 55 60 v With base reversebiesed Vge=—15V0. 1 1 lL Veevisus) 90 90 v EMITTER-TO-BASEVOLTAGE. . 2s. veeo 7 7 v CONTINUOUS COLLECTOR CURRENT . s,s Ic 4 16 A : CONTINUOUS BASE CURRENT... ss ts 'e 2 4 A TRANSISTOR DISSIPATION: Pr At case temperaturesupto25°C 2... 36 cd Ww a TEMPERATURE RANGE: . Storage and Operating (Junction) . 2 2 2. 1 ew 65 to +150 °C . PIN TEMPERATURE (During Soldering): oo At distances > 1/32 in, (0.8 mm) from seating plane for 10s max. 238 °c CO 1019 c-06

{ OL DE 3875081 0027477 g i . 3875081 GE SOLID STATE oie 17477 dD T-S3-1)

3875081 GE SOLID ST General-Purpose Power Translators «

: ~ es . . RCA3054, RCA3055 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C unless otherwise specified [-testconoimions ts —*d ; ‘ | vee [ven [vee | tc [te | win. [wax | win | max | . Collector-Cutoff Current; With basemieer 30 7 ry [erinwovoncwen | eso {ft ? | |e] | -[o |]. [=| Colestoro-€miner Sustaining Voltage: Veeotsus) t ‘emitter resistance Veer tus) v (Mae) = 100.0 0¢ Forward.cucent Callectorto-Emiver ose femsaceiais | veeo [TT eerie =e bale | frewswmever me Pet | Pet Pele] tale Common-Emiter, Small Sora, Short circu, Forward on Curve Transer Ratlo f Cutott Frequency Magnitude of Gommon- iri, Small Signal ShortCireit Forword theo wnt Common-Emiter, Smal Signal, Short Circuit Forward 7 (etki Forward-Bias Second Breakdown Collector 0.88 ‘ Current? (t >1 s} i dunction-to-Case Rg. crw # Pulsed: Pulse duration = 300 ys, duty factor = 1.8%, - © Pulsed: t-second non-epetitive pulse, — - Sst 1020 c-07

3875081 G E SOLID STATE OE 17478 OD Te BSH

General-Purpose Power Transistors. — “ RCA3054, RCA3055 rr eee a A aa a A We =P |S: CERRY EER SESS SE ACE Feseesneatipay seat hieinilen uel . 4 Farts Seis ou balla : Hel HSIN SY teh EERE Sa RES. ene .

2 COCCI SST ITT

‘ & [ene veuremoncticsee TNs PRR TIT ‘ rc. bat 5 | Veunves wusr ge venaveo uineany SNH . é Wit NGAEASE N TeMPenaTune) "> Rhy! ie

8 EEE HEH EPR

S “Epon svoce EEE TE gL elite EEE Ee

4 SESH ESSER SEE ETH

3 Cit NORMALIZED PoweR U4

A 2 + 8 eh 2 «6 8 thy COLLECTOR TO-BUUTTER VOLTAGE WEO—¥ 55 yey Fp, 1 — Maximum operaing ares tor RCASOSA. eet eee ete Se eter | Acetone ence See el ee a d a ee aes a a ee Set umes Seec meas a seeriisen A comets ERB EH aa aE im St Aa ee en Hira Pere . (OCEERRRIC Enger TT . [ee ES SS MP Se toe tavronionl PATE erect TAY [tI 5" Nas NC ENLNG i, at NS SOS ll BEE ELEN ISS Ne HH

3 PSE EEE BRS NORGE BRP

. = a iy ia «TTT Tero SSIS Se RTT tH 3 ‘CASE TEMPERATURE (Tc) #25°C SAO SSSEEHR ‘ SSSA a A Oe | “SINNOTT a) - ON ee eR | NW IN LOTTIE eats Fig, 2 — Maximum operating ares lor ROASCEE. 1021 c-08

Ol DE sa7soa1 0017479 4 ia 3875081 G E SOLID STATE O1e 17479 oo Te BSI! . = — General-Purpose Power Transistors a ; . RCA3054, RCAS055 Stee ee ee cee - LEPEEEEFEEEHFFPRPFPF EEL B= SSeS SS 2 22S S| fog iaseetinateeititatiinmmeennntiitin BSS SSS Sse . 5 op EEEE HEH EEE SHEE BES fe HN ESE ue Ee eee | HTTTR TTT | eae int iG RR en EE Za EFFECTIVE CASE TEMP. OR CASE TEMP. (Tgp ORTO-M . ” e “ " “ * Fi. 8 — Derating cure for both ype. Fig. 4 — Type! input characterises for RCADOS4, RC Es [ceuicenronienacner eo «+ [ERE EE SSE SSeS) See pss ee ees Seg Sees ae aT SSSSSea a pees + SSS SE aici aaa . a } BESS See Ferrel | 2 ee ema AE See See a ee eee het esd Ao ee See ee a Se ees ee j eee ee EE Eee SS eS Ease eee Fes . ‘CocLecrOn-TO eurTTER VOLTAGE (Yee) =¥ um ‘MSE TO-ERITTER VOLTAGE Vee) -¥ om Fig. 5 — Typical output characteristics lor RCA3054. Fig. 6 — Typical transter characteristics tor RCA30S4. con FO egy FOG TEEN Ee ety o cry 1 cy B Fig. 7 — Typical de beta characteristics for RCA3054. Fig. 8 — Typical input characteristics lor RCA3055. ee |:\\ } 1022 c-09

01 DE 3875081 0017480 Oo

3875081 GE SOLID STATE die 17480 0 T'SS7/! . General-Purpose Power Transistors = coe RCA3054, RCA3055 eee a Re ree te San eat SE 5 ee oe aes He EEE

4 Pee cu erates Una eg rene MEE TH

SORES EVE casearvegrisen (| EF meee Fig. 9 — Typical output characteristics for RCA3055. Fig. 10 — Typical transfer characteristics for RCA3055. [onteeTOn-To-ewarven worse Weera VT T TTT) F nn) as A | | F scl — IH eeentttl cameos a | | j oo | 1 a A . LeFi ({] a wht Sei IIa II "Ee td posal elim i oT SS HEAR oe Fg. 11 ~ Typ de bata characterises for RCADES. 484 a 1023 c-10