RBV800 NJSEMI | Alldatasheet
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, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA RBV800-RBV810 PRV: 50-1000 Volts lo : 8.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.97 grams (Approximaly) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratinq at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212) 227-6005 SILICON BRIDGE RECTIFIERS RBV25 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 4.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Typical Thermal Resistance (Note 1 ) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC |F(AV) IFSM I2t VF IR |R<H> R0JC TJ TSTG RBV RBV RBV RBV 800 801 802 804 50 100 200 400 35 70 140 280 50 100 200 400 RBV 806 600 420 600 RBV 808 800 560 800 RBV 810 1000 700 1000 8.0 300 160 1.0 200 2.5 -4010+ 150 -40to+ 150 UNIT V V V A A A2S V HA °c/w Notes: NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets arc current before placing orders Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV800 - RBV810 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES
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_ Tc = 50°C \\K MOUNTIN 3.2"x3.2"x0.12"TH 8,2cm x a. 2cm x 0.3cm PLATE 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 LU o LU O to cc. LU =) OL CO LU D tr O 250 150 100 N \\ 5 v )°C 8,3 ms SINGLE HALF SINE WAVE JEDEC METHOD k s s 1 2 4 6 10 20 40 60 NUMBER OF CYCLES AT 60Hz 100 FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0.01 PERCENT OF RATED REVERSE VOLTAGE, (%)