RBV800D NJSEMI | Alldatasheet
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, L/ nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA RBV800D-RBV810D TELEPHONE: (973) 376-2922 (212) 227-6005 SILICON BRIDGE RECTIFIERS PRV: 50-1000 Volts lo : 8.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.97 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratina at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RBV25 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55DC Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 8.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Typical Thermal Resistance at Junction to Ambient Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR |R(H) R6JC R6JA TJ TSTG RBV RBV RBV RBV 800D 801 D 802D 804D 50 100 200 400 35 70 140 280 50 100 200 400 RBV 806D 600 420 600 RBV 808D 800 560 800 RBV 810D 1000 700 1000 8.0 300 166 1.0 200 2.2 -40to+150 -40to+ 150 UNIT V V V A A A2S V uA uA °C/W °c/w o/"» Notes : NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy N.I Semi-Conductors is believed to be both accurate and reliable at the time of goii going to press. I louever. NJ Semi-C'onductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV800D - RBV810D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT LLJ Q LLJ 8.0 Of J| tr: I- 6.0 m &. 4.0 I " HE/ 3,2cmx \\K MOUNTING, 2"x32"x0.12"THK. 8,2cmx0.3cm)AI.-PU 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT CSL O a LU O LU OL LLJ W LU 250 200 150 JE GL :DE C V V t/IETh SINE WAVE HOD s ItZIC \\ 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE PERES o FORWARD CURRENT, AW O 2 £ £o N rrd ~^- — 4 f Pul seV i/idl Dutj 1=3 Cy :le H
- — i c s 1 — • FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0,01 *— 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS