RBV6005 DSK | Alldatasheet
Document overview
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Technical content
30± 0.3 20± 0.3 φ3. 2 ± 0 .1 5 2.4± 0.2 2.2± 0.2 1.0± 0.1 10± 0.2 7.5± 0.2 7.5± 0.2 4.0± 0.2 5.5± 0.2 3.7± 0.2 4.7± 0.25 0.8± 0.15 11.1± 0.2 17.7± 0.5 2.8± 0.2
FEATURES
◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing molded plastic technique MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RBV 602 RBV 604 RBV 606 RBV 608 RBV
610 UNITS
Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T C =55℃ Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 3.0 A V F V Maximum reverse current @T A =25℃ µ A at rated DC blocking voltage @T A =100℃ µA Operating junction temperature range T j Storage temperature range T STG RBV6005 - - - RBV610 RBV 6005 RBV 601 50 100 1.0 200 200 I (AV) 6.0 SILICON BRIDGE RECTIFIERS A 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 6.0 A KBJ6 ◇ Surge overload rating: 200 amperes peak - 55 ---- + 150 - 55 ---- + 150 I R I FSM A Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 1.6.2 1.4 100 05 0 1 0 0 150 20ms 51 0 5 0 160 120 I FSM (A) 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 -- PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERISTIC AMPERES INSTANTANEOUS FORWARD CURRENT, RBV6005 - - - RBV610 NUMBER OF CYCLES AT 60H Z AMBIENT T EMPERATURE, ℃ FIG.2 -- FORWARD DERATING CURVE FORWARD VOLTAGE, VOLTS www.diode.kr Diode Semiconductor Korea