RBV5000R EIC | Alldatasheet
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RBV5000R - RBV5010R SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 5000R RBV 5001R RBV 5002R RBV 5004R RBV 5006R RBV 5008R RBV 5010R UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 50 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 400 Amps. Current Squared Time at t < 8.3 ms. I2t 660 A2S Maximum Forward Voltage per Diode at IF = 25 Amps. VF 1.1 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W Operating Junction Temperature Range TJ 10 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case with units mounted on heatsink. Page 1 of 2 Rev. 06 : October 16, 2014 RATING RBV25 Dimensions in millimeters 4.9 ± 0.2 3.9 ± 0.2 Φ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( RBV5000R - RBV5010R ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 06 : October 16, 2014 P.C. Board Mounted with SINE WAVE R-Load 100 1.0 400 600 300 200 100 0.1 0.01 0.01 1.0 0.1 100 140 0 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERES FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C TJ = 100 °C TJ = 25 °C 500 10 20 60 1 2 4 6 40 100 www.eicsemi.com