GBJ2500 EIC | Alldatasheet
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GBJ2500 - GBJ2510 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * Glass Passivated Die Construction * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * High current capability * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL GBJ 2500 GBJ 2501 GBJ 2502 GBJ 2504 GBJ 2506 GBJ 2508 GBJ
2510 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 100°C IF(AV) 25 A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I2t 510 A2S Maximum Forward Voltage per Diode at IF = 12.5 A VF 1.1 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 500 µA Thermal Resistance, Junction to Case RθJC 0.6 °C/W Operating Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Note : 1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. Page 1 of 2 Rev. 03 : September 9, 2005 RATING IFSM 300 A Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.7 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 RBV25
RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005 100 10 1.0 200 300 150 100 0.1 0.01 0.0 1.0 0.1 100 1400 20 40 60 12 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Tj = 25 °C Pulse Width = 300 µs SINGLE HALF SINE WAVE JEDEC METHOD TJ = 25 °C Tj = 100 °C Tj = 25 °C 250 10 20 601 2 4 6 40 10 with heatsink Resistive or Inductive load