RBV4005 DSK | Alldatasheet
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Technical content
FEATURES
Ideal for printed circuit board Reliable low cost construction utilizing molded MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RBV 402 RBV 404 RBV 406 RBV 408 RBV
410 UNITS
Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T C =50 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 2.0 A V F V Maximum reverse current @T A =25 μ A at rated DC blocking voltage @T A =100 Operating junction temperature range T J Storage temperature range T STG RBV4005 - - - RBV410 RBV 4005 RBV 401 50 100 1.0 100 I F(AV) 4.0 SILICON BRIDGE RECTIFIERS A 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A KBJ4 plastic technique Surge overload rating: 80 amperes peak - 55 ---- + 150 - 55 ---- + 150 I R I FSM A Dimensions in millimeters 25± 0.3 15± 0.3 φ 3 .2 ± 0 .1 5 2.1± 0.2 7.5± 0.2 4.6± 0.15 3.7± 0.2 4.7± 0.2 9.5± 0.2 17.5± 0.5 2.8± 0.2 0.7± 0.1 1.2± 0.2 Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 1.5.1 1.3 100 100 10 100 8.3ms Single Half Sine Wave T J =150 1.0 01 0 0 1 5 0 50 3.0 2.0 4.0 25 75 125 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 -- PEAK FORWARD SURGE CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERISTIC AMPERES RBV4005 - - - RBV410 NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, FIG.2 -- FORWARD DERATING CURVE INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURRENT, www.diode.kr Diode Semiconductor Korea