RBV2500D NJSEMI | Alldatasheet
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20 STERN AVE. TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 USA RBV2500D - RBV251 OD SILICON BRIDGE RECTIFIERS PRV: 50-1000 Volts lo : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.17 grams (Approximaly ) RBV25 30 ± 0.3 3.9 ± 0.: 4.9 ± 0.2 , *3.2 ±0.1 51= -LJ ±0.2 0.2 ±0.2 1.0 t\\1 2.0 ± 0.2 0.7 ± 0. .2 - il *- '•'HI*- Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratina at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2. VF IR |R(H) R6JC TJ TSTG RBV RBV RBV RBV 2500D 2501 D 2502D 2504D 50 100 200 400 35 70 140 280 50 100 200 400 400 375 1.1 200 1.2 - 40 to + 1 - 40 to + 1 RBV 2506D 600 420 600 RBV 2508D 800 560 800 RBV 2510D 1000 700 1000 UNIT V V V A A A2S V KA uA °C/W Notes : NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going lo press. I lowcver, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in ils use. NJ Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT tr co 2 w O a: a LU a: g: < 2 o: h- O z LJ_ LU LU <* LU L_ HE/ T-SINK 5" X 6" Bcmx 1 AI.-Fi MOUNTING, T x4,9"THK 5,2crnx12.4cm ined plate \\ 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) LU o LU o cr FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 O S co200 LU LU Q. 150 100 N s 8. 3ms SINGLE HAL V s MV S JEDEC METHOD II \\ 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE PERES o H Z LU £ L° O no aavMi o 0.01 1 0,6 f f f I t f =uls -X1 ew dth uty ,.. = 3 Cyc 30 (i le s FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS