RBV2500 NJSEMI | Alldatasheet
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E.IIE.U , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 RBV2500-RBV2510 PRV: 50-1000 Volts lo : 25 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.17 grams ( Approximately ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIERS RBV25 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC |F(AV) IFSM I2t VF IR |R(H) R0JC TJ TSTG RBV RBV RBV RBV 2500 2501 2502 2504 50 100 200 400 35 70 140 280 50 100 200 400 300 375 1.1 200 1.45 - 40 to + 1 - 40 to + 1 RBV 2506 600 420 600 RBV 2508 800 560 800 RBV 2510 1000 700 1000 UNIT V V V A A A2S V MA MA °c/w Notes : NJ Semiconductors reserves the right to change Test conditions, parameter limits and package dimensions without notice. Information Furnished by NJ Seini-Conduetors is believed to he both accurate and reliable at the time of going to press. I louever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers lo verily that datasheets are current before placing orders. Quality Semi-Conductor 5
RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
5 S S K fe
HE* T-SINK MOUNTING, T( 5"x6"x4,9"THK. 3cm x 15, 2cm x 12,4cm Al. -Finned plate 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) m cc rj o LU O c FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 o s 250 r 200 150 s \\. 3ms SINGLE HAL \\E \\f = 50 s /AVE \\C METHOD I s V 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE tn LLI UL Ml QJ 10 h-~ z UJ * 1.0 3WARDCL O 0.01 . — H t f s =uls e Width =3 % Duty Cyc 30(1. le s FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS