RBV1500 NJSEMI | Alldatasheet

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, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 RBV1500-RBV1510 PRV: 50-1000 Volts lo : 15 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VAC @1 Sec * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.11 grams (Approximaly) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SILICON BRIDGE RECTIFIERS RBV25 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 7.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Typical Thermal Resistance (Note 1 ) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM ' I2t VF IR "^ |R(H) R9JC TJ TSTG RBV RBV RBV RBV 1500 1501 1502 1504 50 100 200 400 35 70 140 280 50 100 200 400 300 375 1.1 200 1.9 - 40 to + 1 - 40 to + 1 RBV 1506 600 420 600 RBV 1508 800 550 800 RBV 1510 1000 700 1000 UNIT V V V A A A2S V MA HA °C/W Notes : Quality Semi-Conductors

RATING AND CHARACTERISTIC CURVES ( RBV1500 - RBV1510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT O Q: Q HI Ct 0, II o: i- O ^z- LL LLJ HEAT-SINK MOUNTING, To \\" x 4" x 3" THK (12 7cm x 12. 7cm x 7. 3 Al -Finned plate \\0 25 50 75 100 125 150 175 CASE TEMPERATURE, (°C) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES = S 8 8 8 S \\\\ N V -- Jj-- \\. ... = 50gC \\3 ms SINGLE HALF SINE WAVE JEDEC METHOD HI N 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 0.01 FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PERCENT OF RATED REVERSE VOLTAGE, (%)