RBV1000 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
<~>£.mi~(lona.u.ctoi iJ^ioducti, line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA RBV1000-RBV1010 PRV: 50-1000 Volts lo : 10 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.97 grams (Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212) 227-6005 SILICON BRIDGE RECTIFIERS RBV25 ±0.2 0.2±o. 2.0 ± 0.2- 0.7 ±0.1" Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 5.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR |R<H) R6JC TJ TSTG RBV RBV RBV RBV 1000 1001 1002 1004 50 100 200 400 35 70 140 280 50 100 200 400 RBV 1006 600 420 600 RBV 1008 800 560 800 RBV 1010 1000 700 1000 300 160 1-0 200 - 40 to + 1 50 -4010+ 150 UNIT V V V A A A2S V MA uA °C/W Notes : N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information Furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of going lo press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verily that datasheets arc current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV1000 - RBV1010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT LJJ ° OL a uj t£ 0. < ^ LU — HEA (8- T-SINK 2" x 3.2 2cm x 8 AI-FINI> xO.12 2cm x C EDPU NG Tc THK, ,3cm) ME 75 100 125 150 175 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT LLl o LU O if> Ct Lll
- => a: CO LU cr O s 250 200 150 100 n k 83ms SINGLE HALF SINE WAVE JEDEC METHOD SL s s CASE TEMPERATURE, ( °C) 1 2 4 6 10 20 40 60 NUMBER OF CYCLES AT 60Hz 100 FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 PERES z LU RWARD CU O >-« LL. 0.01 4 0.6 I I ulseW 1 % D 0.8 1.0 1.2 TJ i dth uty = 2 = 30 Cyc 5°( 0 US e 1 — 4 1.6 1 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS