RBV1000D NJSEMI | Alldatasheet
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E.IIE. , O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RBV1000D-RBV1010D PRV: 50-1000 Volts lo : 10 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.97 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212) 227-6005 SILICON BRIDGE RECTIFIERS RBV25 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 1 0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR lp(H) RGJC Tj TSTG RBV RBV RBV RBV 1000D 1001D 1002D 1004D 50 100 200 400 35 70 140 280 50 100 200 400 300 166 1.1 200 2.2 - 40 to + 1 - 40 to + 1 RBV 1006D 600 420 600 RBV 1008D 800 560 800 RBV 1010D 1000 700 1000 UNIT V V V A A A2S V uA uA °C/W Notes : NJ Semi-Conductors reserves Ihe right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time of going to press. I louever, NJ Scmi-Conductors assumes no responsibility for any errors or omissions discovered in its us NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors going se.
RATING AND CHARACTERISTIC CURVES ( RBV1000D - RBV1010D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT L o Q; Q LU CC 0. LU LU£ o: u LU - (8,2 \\T-SINK MOUNTING. T .2"x3,2"x0.12"THK, cm x 8.2cm x 0.3cm) Al FINNED PLATE \\ \\ 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 CO LU ct LU Q g 0.1 0.01 i I i I f t f f uls /oD Tj ath uty = 2 3yc 5°C 0^5 e FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 LU a o LU O U) OL LU O V S \\ 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD ~ 1* _ _ 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%)