RB520S-30 HDSEMI | Alldatasheet

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Technical content

Features

H igh Diode Semiconductor SOD523

Applications

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  • Rectifier RB520S-30 Electrical Characteristics（Ta=25℃ Unless otherwise specified） Small surface mounting type Low I R High reliability Parameter Symbol Limit Unit DC reverse voltage V R 30 V Mean rectifying current I O 200 mA Non-repetitive Peak Forward Surge Current@t=8.3ms I FSM 1 A Junction temperature T j 125 ℃ Storage temperature T stg -55~+150 ℃ Power dissipation PD 150 mW Thermal resistance junction to ambient RθJA 667 ℃/W Parameter Symbol Min Typ Max Unit Conditions Forward voltage V F

0.6 V I

F =200mA Reverse current I R 1 μA V R =10V

H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 100 0 25 50 75 100 125 100 150 200 0 100 200 300 400 500 600 700 800 0.01 0.1 100 600 0 5 10 15 20 25 30 0.01 0.1 100 1000 Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) POWER DISSIPATION P D (mW) Power Derating Curve AMBIENT TEMPERATURE T a ( ) Forward Characteristics Ta=100 o C Ta=25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (mV) Reverse Characteristics Ta=100 o C Ta=25 o C REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V)

H igh Diode Semiconductor Package Outline Dimensions SOD523 Suggested Pad Layout SOD523 E A b p C ALL ROUND D A UNIT A b p C D E H E V mm 0.80 0.50 0.4 0.2 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 O H E

Reel Taping Specifications For Surface Mount Devices-SOD523 H igh Diode Semiconductor