RB500V-40 GWSEMI | Alldatasheet
Document overview
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Technical content
M Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Electrical Ratings @Ta=25℃
FEATURES
z Low current rectifier schottky diode z Low voltage, low inductance z For power supply MAKING: Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 1 A Operating Junction Temperature Range Tj -40 ~ +125 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ Power dissipation PD 200 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.45 V IF=10mA Reverse current IR 1 μA VR=10V Capacitance between terminals CT 6 pF V R=10V, f=1MHZ RB 500V-40 SCHOTTKY BARRIER DIODE 2/ S9 PINNING PIN DESCRIPTION
1 Cathode
2 Anode
Marking Code: "2/ S9" Simplified outline SOD-323 and symbol 2/ S9
0.0 0.2 0.4 0.6 0.01 0.1 100 0 8 16 24 32 40 0.01 0.1 100 Forward Characteristics Reverse Characteristics Ta =100℃ Ta =25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Pulsed Pulsed Ta=100℃ Ta=25℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) 0 25 50 75 100 125 100 150 200 250 0 4 8 12 16 20 Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE URE a (℃) CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VO LTAGE VR (V) RB 500V-40
Plastic surface mounted package; 2 leads SOD-323 PACKAGE OUTLINE