RB160M-40TR ROHM | Alldatasheet

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB160M-40 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability Construction Silicon epitaxial Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj C Tstg C Electrical characteristic (Ta=25°C) Symbol Min. Typ. Max. Unit Forward voltage VF - 0.46 0.51 V I F=1.0A Reverse current IR - 4.0 30 μA VR=40V Conditions Storage temperature 40 to 150 (*1)Mounted on epoxy board. 180°Half sine wave Parameter Forward current surge peak （60Hz・1cyc） 30 Junction temperature 150 Reverse voltage (DC) 40 Average rectified forward current 1 Parameter Limits Reverse voltage (repetitive) 40 PMDU 1.2 3.05 0.85 3.5±0.05 1.75±0.1 8.0±0.2 0.25±0.05 1.5MAX 3.71±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.9±0.1 1.6±0.1 2.6±0.1 3.5±0.2 0.8±0.1 0.1±0.1 0.05 1/3 2011.04 - Rev.E

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB160M-40 AVE:10.4ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 0.1 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) Mounted on epoxy board 1ms IM=10mA IF=0.5A 300us time FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 100 1000 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=150℃ 0.001 0.01 0.1 100 1000 10000 0 5 10 15 20 25 30 35 40 Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ 100 1000 0 5 10 15 20 25 30 f=1MHz 430 440 450 460 470 480 AVE:454.3mV Ta=25℃ VF=1A n=30pcs Ta=25℃ VR=40V n=30pcs AVE:4.08uA 200 210 220 230 240 250 260 270 280 290 300 AVE:279.7pF Ta=25℃ f=1MHz VR=0V n=10pcs 100 150 200 8.3ms Ifsm 1cyc AVE:83.0A 100 1 10 100 100 150 200 0.1 1 10 100 t Ifsm 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 2 DC D=1/2 Sin(θ＝180) 8.3ms Ifsm 1cyc 8.3ms 2/3 2011.04 - Rev.E

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB160M-40REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.01 0.02 0.03 0.04 0.05 0 1 02 03 04 0 Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 25 50 75 100 125 150 Sin(θ＝180) DC D=1/2 T Tj=150℃ D=t/Tt VR Io VR=20V T Tj=150℃ D=t/Tt VR Io VR=20V AVE:7.30kV No break at 30kV C=100pF R=1.5kΩ C=200pF R=0Ω ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 3/3 2011.04 - Rev.E

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes