RB150M-30TR ROHM | Alldatasheet
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Technical content
Schottky barrier Diode RB150M~-30 71 1, PRODUCT Schottky barrier Diode (Silicon Epitaxial Planer) 2. TYPE RB150N-30 3. APPLICATION General rectification 4, FEATURE Small power moid type (PMDU) High reliability Low VF §. ABSOLUTE WAXIMUM RATING (Ta=25°C) Reverse voltage (repetitive peak) VR wserseeee 30 ¥ Reverse voltage (DC) VR wrrrseee 30 V Average rectified forward current (#1) lo ctenerene LoA Forward current surge peak (60Hz: icyc. ) FFSM vrreeeeee 30 A Junction temperature Tj seteeeeee 150 °c Storage temperature . Tstg sree 40~150 °C [E(1) Glass epoxy substrate at the time of assembler, half sine wave at 180°C Tco=90°C max] 6. ELECTRICAL CHARACTERISTIC (Ta=25°C) Gharacteristic| Sybol | Tost condition [rpg — Forward voltage] VET | Fe" O05 Al 0.39 VI 0.46 VI Forward voltage) "veo | ifs 4.0-A 0.43 V0.8 V Viz 15 oT eT Reverse current|——tRy-—| VRe_ 90 Vi 9.0 Al 50 wl Thermal . at mounted on epoxy board! * Please pay attention to static electricity when handling. 7. DIMENSION (UNIT:mm) 0.90.1 . CATHODE MARK ' 3 3 al a | 1.60.1 0.00.1 8. Nass per piece 10 mg/pes DESIGN CHECK APPROVAL DATE:AUG.08.2002 | SPECIFICATION No.: RB 150M—3O04#ENG 79799114 2