RB160M-30 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 30V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode H igh Diode Semiconductor SOD-1 23FL Low Vf Low IR Electrical Characteristics (Ta=25℃ Unless otherwise specified） RB160M-30 Symbol Parameter Value Unit VR DC Blocking Voltage 30 V IO Forward Current 1 IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms A PD Power Dissipation 450 mW RθJA Thermal Resistance from Junction to Ambient 222 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ Parameter Symbol Test conditions Min Typ Max Unit VR=15V 20 μA Reverse current IR VR=30V 50 μA VF(1) I F=500mA 0.46 Forward voltage VF(2)* I F=1000mA 0.48 V * Pulse test
H igh Diode Semiconductor 0 5 10 15 20 25 30 0.1 100 1000 10000 0 25 50 75 100 125 100 150 200 250 300 350 400 450 500 0.01 0.1 100 1000 0 5 10 15 20 100 150 200 250 300 REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (uA) T a =100 T a =25 Reverse Characteristics POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Power Derating Curve T a =100 T a =25 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) T a =25 f=1MHz Capacitance Characteristics
H igh Diode Semiconductor 1.0 0.15 2.8 0.15 1.8± 0.1 Cathode Band Top View 3.7 0.15 0.8 0.1 1.3± 0.1 0.12-0.20 Dimensions in millimeters 2.85 1.4 1.2 SOD-1 23FL SOD-1 23FL
Reel Taping Specifications For Surface Mount Devices-SOD123FL H igh Diode Semiconductor SOD123FL