RA60H1317M1A

RA60H1317M1A_08 MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V GG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation.

FEATURES

• Enhancement-Mode MOSFET Transistors DD≅0 @ VDD=12.5V, VGG=0V)
• Pout>60W, ηT>45% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current I GG=1mA (typ) at VGG=5V
• Module Size: 67 x 18 x 9.9 mm RoHS COMPLIANCE
• RA60H1317M1A is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA60H1317M1A-101 Antistatic tray, 10 modules/tray

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (FIN)

PACKAGE CODE: H2M 3 2

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage V GG<5V 17 V VGG Gate Voltage V DD<12.5V, Pin=0mW 5.5 V Pin Input Power 100 mW Pout Output Power f=136-174MHz, ZG=ZL=50Ω 80 W Tcase(OP) Operation Case Temperat ure Range -30 to +100 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 136 174 MHz Pout Output Power 60 W ηT Total Efficiency 45 % 2fo 2 nd Harmonic -50 dBc 3fo 3 rd Harmonic -50 dBc ρin Input VSWR 3:1 — IGG Gate Current VDD=12.5V VGG=5V Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<70W (VGG control), Load VSWR=3:1 No parasitic oscillation More than –60dBc — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=60W (VGG control), Load VSWR=20:1 No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2 nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GA IN and OUTPUT POWER, POWER GA IN and DRA IN CURRENT versus INPUT POWER DRA IN CURRENT versus INPUT POWER OUTPUT POWER, POWER GAIN and DRA IN CURRENT versus INPUT POWER 100 130 140 150 160 170 180 FREQUENCY f(MHz) OUTPUT POWER P out (W) INPUT VSWR ρin (-) 100 TOTAL EFFICIENCY ηT(%) VDD=12.5V VGG=5V Pin=50mW Pout ηT ρin - 1 0- 5 0 5 1 01 52 0 INPUT POWER P in(dBm) OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) DRAIN CURRENT I DD(A) f=136MHz VDD=12.5V VGG=5V Pout IDD Gp -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=155MHz VDD=12.5V VGG=5V Pout Gp IDD -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 130 140 150 160 170 180 FREQUENCY f(MHz) HARMONICS (dBc) VDD=12.5V VGG=5V Pin=50m W 2nd 3rd - 1 0- 5 0 5 1 01 52 0 INPUT POWER P in(dBm) OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) DRAIN CURRENT I DD(A) f=174MHz VDD=12.5V VGG=5V Pout Gp IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE OUTPUT POWER and DRA IN CURRENT versus DRAIN VOLTAGE 100 2 4 6 8 10 12 14 DRAIN VOLTAGE V DD(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=136MHz PIN=50m W VGG=5V Pout IDD 100 2 4 6 8 10 12 14 DRAIN VOLTAGE V DD(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=155MHz PIN=50mW VGG=5V Pout IDD 100 2468 1 0 1 2 1 4 DRAIN VOLTAGE V DD(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=174MHz PIN=50m W VGG=5V Pout IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus GA TE VOLTA GE versus GA TE VOLTA GE OUTPUT POWER and DRAIN CURRENT versus GA TE VOLTA GE 100 GATE VOLTAGE VGG(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=136MHz PIN=50m W VDD=12.5V Pout IDD 100 GATE VOLTAGE VGG(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=155MHz PIN=50m W VDD=12.5V Pout IDD 100 GATE VOLTAGE V GG(V) OUTPUT POWER P out (W) DRAIN CURRENT I DD(A) f=174MHz PIN=50m W VDD=12.5V Pout IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) ʶ ʢ ʣ ʢ ʣ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ᶄᶃ ʶ ʶ ʶ ᶅᶆ

1 RF Input (Pin )

2 Gate Voltage(VGG)

3 Drain Voltage (VDD)

5 RF Ground (Case)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT

2 Gate Voltage (VGG)

C1, C2: 4700pF, 22uF in parallel Directional Coupler Attenuator Power Meter Spectrum Analyzer Signal Generator Attenuator Pre- amplifier Power Meter Directional Coupler DUT 5 4321 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD Attenuator ᶃ ᶄ ᶅ ᶆ ᶇ

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At P out=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=45% (A) VDD (V) 1st 0.05 5.0 2.1 0.8 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long-term reliability, it is best to keep the module case temperature (T case) below 90°C. For an ambient temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (60W/45% – 60W + 0.05W) = 0.41 °C/W When mounting the module with the thermal resistance of 0.41 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 40.6 °C Tch2 = Tair + 63.8 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA60H1317M1A RA60H1317M1A MITSUBISHI ELECTRIC 13 Mar 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: By the gate voltage (VGG). Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to VGG=5V (maximum), the nominal output power becomes available. Load condition of Output terminal: This module suppose to use on the condition that load impedance is 50ohm. On the over load condition, this module run into the short modein the worst case and the module involve the risk of burn out and smoking of parts including the substrate in the module. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ma y occur. Trouble with semiconductors may lead to personal injury, fire or propert y damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!