RA45H7687M1_08 MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(V GG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (P out=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that V GG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power.

FEATURES

  • Enhancement-Mode MOSFET Transistors DD≅0 @ VDD=12.8V, VGG=0V)
  • Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
  • Broadband Frequency Range: 764-870MHz
  • Metal cap structure that makes the improvements of RF radiation simple
  • Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
  • Module Size: 67 x 18 x 9.9 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. RoHS COMPLIANCE
  • RA45H7687M1 is a RoHS compliant product.
  • RoHS compliance is indicate by the letter “G” after the Lot Marking.
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H7687M1-101 Antistatic tray, 10 modules/tray

1 RF Input added Gate Voltage 1(Pin&VGG1)

2 Gate Voltage 2(VGG2), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

PACKAGE CODE: H2M

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG1=3.4V ± 7%, VGG2<5V, Pin=0W 17 V VGG1 Gate Voltage 1 V GG2<5V, VDD<12.8V, Pin=50mW 4.5 V VGG2 Gate Voltage 2 VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW 6 V Pin Input Power 100 mW Pout Output Power 60 W Tcase(OP) Operation Case Temperature Range f=764-870MHz, VGG1=3.4V ± 7%, VGG2<5V -30 to +100 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT F Frequency Range 764 870 MHz Pout1 Output Power 1 V DD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW 45 W ηT Total Efficiency V DD=12.8V 33 % 2fo 2 nd Harmonic V GG1=3.4V -40 dBc 3fo 3 nd Harmonic V GG2=5V -35 dBc ρin Input VSWR P in=50mW 3:1 — IDD Leakage Current V DD=17V, VGG1=VGG2=0V, Pin=0W 1 mA Pout2 Output Power 2* V DD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm 1.5 W — Stability VDD=10.0-15.2V, Pin=1-100mW, 1.5<Pout <50W (VGG2 control, VGG1=3.4V), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=45W (VGG2 control, VGG1=3.4V), Load VSWR=20:1 No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. *: This is guaranteed as design value.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTA L EFFICIENCY, 2 nd, 3rd HA RMONICS versus FREQUENCY versus FREQUENCY INPUT VSWR versus FREQUENCY 760 780 800 820 840 860 880 FREQUENCY f(MHz) OUTPUT POWER Pout(W) TOTAL EFFICIENCY(%) VDD=12.8V VGG1=3.4V VGG2=5V Pin=50m W Pout ηT -80 -70 -60 -50 -40 -30 760 780 800 820 840 860 880 FREQUENCY f(MHz) HARMONICS (dBc) VDD=12.8V VGG1=3.4V VGG2=5V Pin=50m W 2nd 3rd 760 780 800 820 840 860 880 FREQUENCY f(MHz) INPUT VSWR ρin (-) V DD=12.8V V GG1=3.4V V GG2=5V Pin=50m W ρin OUTPUT POWER, POWER GA IN and OUTPUT POWER, POWER GA IN and DRA IN CURRENT versus INPUT POWER DRA IN CURRENT versus INPUT POWER OUTPUT POWER, POWER GA IN and OUTPUT POWER and DRA IN CURRENT DRA IN CURRENT versus INPUT POWER versus DRA IN VOLTA GE - 1 0- 5 0 5 1 01 52 0 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=806MHz VDD=12.8V VGG1=3.4V VGG2=5V Pout Gp IDD - 1 0- 5 0 5 1 01 52 0 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=870MHz VDD=12.8V VGG1=3.4V VGG2=5V Pout Gp IDD -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=764MHz VDD=12.8V VGG1=3.4V VGG2=5V Pout Gp IDD 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=764MHz VGG1=3.4V VGG2=5V Pin=50m W IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus DRA IN VOLTA GE versus DRA IN VOLTA GE OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus GA TE VOLTA GE2 versus GA TE VOLTA GE2 012345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) f=764M Hz V DD =12.8V V GG1 =3.4V Pin=50m W IDD 012345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout (W) f=806MHz V DD =12.8V V GG1 =3.4V Pin=50m W IDD Pout (dBm ) (dBm) (dBm) Pout (dBm ) Pout (W) 2 4 6 8 10 12 14 16 DRAI N VOLTAGE V DD (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=806M Hz V GG1 =3.4V V GG2 =5V Pin=50m W IDD 2468 1 0 1 2 1 4 1 6 DRAI N VOLTAGE V DD (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=870M Hz V GG1 =3.4V V GG2 =5V Pin=50m W IDD OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus GA TE VOLTA GE2 versus GA TE VOLTA GE2 OUTPUT POWER and DRA IN CURRENT OUTPUT POWER and DRA IN CURRENT versus GA TE VOLTA GE2 versus GA TE VOLTA GE2 012345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) f=870MHz VDD =12.8V VGG1=3.4V Pin=50m W IDD (dBm) Pout (dBm ) Pout (W) 12345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) f=764MHz VDD =12.8V VGG1=3.4V Pin=2dBm IDD Pout (W) Pout (dBm ) (dBm) 12345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) f=806MHz VDD =12.8V VGG1=3.4V Pin=2dBm IDD Pout (W) Pout (dBm ) (dBm) 12345 GATE VOLTAGE V GG2 (V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) f=870MHz VDD =12.8V VGG1=3.4V Pin=2dBm IDD Pout (W) Pout (dBm ) (dBm)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ʶ ʢ ʣ ʢ ʣ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ᶄᶃ ʶ ʶ ʶ ᶅᶆ OUTLINE DRAWING (mm)

1 RF Input added Gate Voltage 1(Pin & VGG1)

2 Gate Voltage 2(VGG2)

3 Drain Voltage (VDD)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DUT ZG=50Ω 4321 ZL=50Ω C3 C4 C1R1 A Directional Coupler Attenuator Pow er Meter Spectrum Analyzer - + DC Pow er Supply VGG2 + - DC Pow er Supply VDD - + DC Pow er Supply VGG1 AttenuatorPr e- amplifier Pow er Meter Direc tional Coupler AttenuatorSignal Generator TEST BLOCK DIAGRAM EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT C3, C4: 4700pF, 22uF in parallel C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below. VGG1=3.4V External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm. that doesn't prevent RF characteristic on this module. VGG1

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At P out=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=33% (A) VDD (V) 1st 0.05 3.0 3.5 0.62 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long-term reliability, it is best to keep the module case temperature (T case) below 90°C. For an ambient temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 47.5 °C Tch2 = Tair + 81.3 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H7687M1 RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltages (VGG1 and VGG2). When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.) Around VGG2=0V(minimum), the output power and drain current increases substantially. Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.) VGG2 is used to set the drain’s quiescent current for the required linearity. Load condition of Output terminal: This module suppose to use on the condition that load impedance is 50ohm. On the over load condition,this module run into the short modein the worst case and the module involve the risk of burn out and smoking of parts including the substrate in the module. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ma y occur. Trouble with semiconductors may lead to personal injury, fire or propert y damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!

RA45H7687M1 MITSUBISHI ELECTRIC 29 th Feb 2008 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-4140 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor

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F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division

307 Alexandra Road

#3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group

1050 East Arques Avenue

Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division

348 Victoria Road

Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245