RA45H4045MR

RA45H4045MR MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

MITSUBISHI RF MOSFET MODULE RA45H4045MR RoHS Compliance , 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO RA45H4045M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

PACKAGE CODE: H2S BLOCK DIAGRAM

DESCRIPTION

The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-450MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Reverse PIN type
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA45H4045MR-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA45H4045MR-101 Antistatic tray, 10 modules/tray

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power f=400-450MHz, ZG=ZL=50Ω 55 W Tcase(OP) Operation Case Temperature Range -30 to +110 °C Tstg Storage Temperature Range -40 to +110 °C Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 400 450 MHz Pout Output Power 45 W ηT Total Efficiency 35 % 2fo 2nd Harmonic -25 dBc ρin Input VSWR 3:1 — IGG Gate Current VDD=12.5V VGG=5V Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<55W (VGG control), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=45W (VGG control), Load VSWR=20:1 No degradation or destroy — All Parameters, Conditions, Ratings and Limits are subject to change without notice

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER 390 400 410 420 430 440 450 460 FREQUENCY f(MHz) OUTPUT POWER Pout(W) INPUT VSWR ρin (-) TOTAL EFFICIENCY ηT(%) VDD=12.5V VGG=5V Pin=50mW Pout ηT ρin -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=400MHz, VDD=12.5V, VGG=5V Pout IDD Gp -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=430MHz, VDD=12.5V, VGG=5V Pout Gp IDD -70 -60 -50 -40 -30 -20 390 400 410 420 430 440 450 460 FREQUENCY f(MHz) HARMONICS (dBc) VDD=12.5V VGG=5V Pin=50mW 2nd 3rd OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 100 2 4 6 8 10 12 14 16 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A)Pout f=400MHz, VGG=5V, Pin=50mW IDD -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=450MHz, VDD=12.5V, VGG=5V Pout Gp IDD 100 2 4 6 8 10 12 14 16 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A)Pout f=430MHz, VGG=5V, Pin=50mW IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 2.53 3.544 .5 5 5.5 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=400MHz, VDD=12.5V, Pin=50mW IDD 100 2 4 6 8 10 12 14 16 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A)Pout f=450MHz, VGG=5V, Pin=50mW IDD 2.5 3 3.5 4 4.5 5 5.5 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=430MHz, VDD=12.5V, Pin=50mW IDD 2.53 3.544 .5 5 5.5 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=450MHz, VDD=12.5V, Pin=50mW IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3.1 +0.6/-0.4 7.5 ±0.5 (9.88) (50.4) 0.09 ±0.02 2.3 ±0.3 2-R2 ±0.5 10.5 ±1 22.5 ±1 49.5 ±1 54.0 ±1 60.0 ±0.5 51.5 ±0.5 14.0 ±1 21.0 ±0.5 9.5 ±0.5 2.0 ±0.5 17.0 ±0.5 Ø0.45 ±0.15 4.0 ±0.3 4 3 2 1 7.25 ±0.8 3.0 ±0.3 66.0 ±0.5

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

OUTLINE DRAWING (mm)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Attenuator Power Meter Spectrum Analyzer Signal Generator Pre- amplifier Power Meter Attenuator Directional Coupler 123 4 ZL=50Ω ZG=50Ω C2 C1 - + DC Power Supply VDD + - DC Power Supply VGG Directional Coupler Attenuator 5DUT C1, C2: 4700pF, 22uF in parallel 1 RF Input (Pin) EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=45W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=35% (A) VDD (V) 1st 0.05 2.0 23.0 0.24 2nd 2.0 12.0 2.4 2.80 3rd 12.0 45.0 1.2 6.80 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=45W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 54.2 °C Tch2 = Tair + 90.0 °C Tch3 = Tair + 92.4 °C 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H4045MR RA45H4045MR MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=4V the output power and Drain current increases strongly. Around VGG=4.5V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. Keep safety first in your circuit di ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire o r property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammabl e material or (iii) prevention against an y malfunction or mishap.