RA30H4452M-E01

RA30H4452M MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA30H4452M 440-520MHz 30W 12.5V MOBILE RADIO RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non -linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H4452M-E01 RA30H4452M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power f=440-520MHz, ZG=ZL=50Ω 45 W Tcase(OP) Operation Case Temperature Range -30 to +110 °C Tstg Storage Temperature Range -40 to +110 °C Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 440 520 MHz Pout Output Power 30 W ηT Total Efficiency 40 % 2fo 2nd Harmonic -25 dBc ρin Input VSWR 3:1 — IGG Gate Current VDD=12.5V, VGG=5V, Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 No degradation or destroy — All Parameters, Conditions, Ratings and Limits are subject to change without notice

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2nd, 3rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz) OUTPUT POWER Pout(W) INPUT VSWR ρin (-) 100 TOTAL EFFICIENCY ηT(% ) VDD=12.5V VGG=5V Pin=50mW Pout ηT ρin -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=440MHz, VDD=12.5V, VGG=5V Pout IDD Gp -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=470MHz, VDD=12.5V, VGG=5V Pout Gp IDD -70 -60 -50 -40 -30 -20 430 440 450 460 470 480 490 500 510 520 530 FREQUENCY f(MHz) HARMONICS (dBc) VDD=12.5V VGG=5V Pin=50mW 2nd 3rd OUTPUT PO WER, POWER GAIN and OUTPUT PO WER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER OUTPUT PO WER and DRAIN CURRENT OUTPUT PO WER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD(V) OUTPUT POWER Pout(W) DRAIN CURRENT I DD(A) Pout f=440MHz, VDD=12.5V, VGG=5V IDD -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=490MHz, VDD=12.5V, VGG=5V Pout Gp IDD -10 -5 0 5 10 15 20 INPUT POWER P in(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=520MHz, VDD=12.5V, VGG=5V PoutGp IDD 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD(V) OUTPUT POWER Pout(W) DRAIN CURRENT I DD(A) Pout f=470MHz, VDD=12.5V, VGG=5V IDD

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified) OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE versus GATE VOLTAGE 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE V GG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=440MHz, V DD=12.5V, VGG=5V IDD 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=490MHz, V DD=12.5V, VGG=5V IDD 2 4 6 8 10 12 14 16 DRAIN VOLTAGE V DD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A)Pout f=520MHz, V DD=12.5V, VGG=5V IDD 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE V GG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=470MHz, V DD=12.5V, VGG=5V IDD 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE V GG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=490MHz, V DD=12.5V, VGG=5V IDD 2 2.5 3 3.5 4 4.5 5 GATE VOLTAGE V GG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A)Pout f=520MHz, V DD=12.5V, VGG=5V IDD

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

12.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1 66.0 ±0.5 60.0 ±0.5 51.5 ±0.5 3.0 ±0.3 9.5 ±0.52.0 ±0.5 2-R2 ±0.5 17.0 ±0.5 Ø0.45 ±0.15 4.0 ±0.35 1 2 3 4 3.1 +0.6/-0.4 7.5 ±0.52.3 ±0.3 (9.88) (50.4) 0.09 ±0.02

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS C1, C2: 4700pF, 22uF in parallel Directional Coupler Attenuator Power Meter Spectrum Analyzer Signal Generator Attenuator AttenuatorPre- amplifier Power Meter Directional Coupler DUT 5 4 3 2 1 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD TEST BLOCK DIAGRAM

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The soldering temperature shall be lower than 260°C for maximum 10 seconds, or lower than 350°C for maximum 3 seconds. Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles in the coating of the transistor chips, which can lift off bond wires). Thermal Design of the Heat Sink: At P out=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=40% (A) VDD (V) 1st 0.05 1.5 5.0 0.30 2nd 1.5 9.0 2.4 1.50 3rd 9.0 30.0 1.2 4.20 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 41.5 °C Tch2 = Tair + 57.0 °C Tch3 = Tair + 67.8 °C 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RA30H4452M RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around V GG=3.5V the output power and Drain current increases strongly. Around VGG=4V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance Z L=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality: MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. Keep safety first in your c ircuit Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

RA30H4452M MITSUBISHI ELECTRIC 2 Dec 2002 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor

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#3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group

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Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division

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Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245