RA30H3340M-101

RA30H3340M_06 MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

PACKAGE CODE: H2S BLOCK DIAGRAM DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANCE
• RA30H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H3340M-101 Antistatic tray, 10 modules/tray

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power f=330-400MHz, ZG=ZL=50Ω 45 W Tcase(OP) Operation Case Temperature Range -30 to +110 °C Tstg Storage Temperature Range -40 to +110 °C Above Parameters are guaranteed independently ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 330 400 MHz Pout Output Power 30 W ηT Total Efficiency 40 % 2fo 2nd Harmonic -25 dBc ρin Input VSWR 3:1 — IGG Gate Current VDD=12.5V, VGG=5V, Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 No degradation or destroy — All Parameters, Conditions, Ratings and Limits are subject to change without notice

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 100 0 20 40 60 80 100 INPUT POWER Pin (mW) f=440MHz, VDD=12.5V, VGG=5V Pout ηT OUTPUT POWER, TOTAL EFFICIENCY and INPUT VSWR versus FREQUENCY 100 430 450 470 490 510 530 FREQUENCY f (MHz) ρin @ Pout=30W (VGG control) ηT @ Pout=30W (VGG control) Pout @VGG=5V VDD=12.5V, Pin=50mW TOTAL EFFICIENCY ηT (%) TOTAL EFFICIENCY ηT (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W) INPUT VSWR ρin OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 100 f=520MHz, VDD=12.5V, VGG=5V Pout ηT 0 20 40 60 80 100 INPUT POWER Pin (mW) OUTPUT POWER and TOTAL EFFICIENCY versus INPUT POWER 100 f=480MHz, VDD=12.5V, VGG=5V Pout ηT 0 20 40 60 80 100 INPUT POWER Pin (mW) TOTAL EFFICIENCY ηT (%) TOTAL EFFICIENCY ηT (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W) OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 60 OUTPUT POWER and TOTAL EFFICIENCY versus DRAIN VOLTAGE 100 ηT Pout 440MHz 480MHz 520MHz VGG=5V, Pin=50mW 0 2 4 6 8 10 12 14 16 18 DRAIN VOLTAGE VDD (V) 100 Pout f=440MHz, VDD=12.5V, Pin=50mW ηT 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE VOLTAGE VGG (V) TOTAL EFFICIENCY ηT (%) TOTAL EFFICIENCY ηT (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W) OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 100 f=480MHz, VDD=12.5V, Pin=50mW Pout ηT 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE VOLTAGE VGG (V) OUTPUT POWER and TOTAL EFFICIENCY versus GATE VOLTAGE 60 100 f=520MHz, VDD=12.5V, Pin=50mW Pout ηT 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE VOLTAGE VGG (V) TOTAL EFFICIENCY ηT (%) TOTAL EFFICIENCY ηT (%) OUTPUT POWER Pout (W) OUTPUT POWER Pout (W)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 12.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1 66.0 ±0.5 60.0 ±0.5 51.5 ±0.5 3.0 ±0.3 9.5 ±0.5 2.0 ±0.5 2-R2 ±0.5 17.0 ±0.5 Ø0.45 ±0.15 4.0 ±0.3 1 2 3 4 3.1 +0.6/-0.4 7.5 ±0.5 2.3 ±0.3 (50.4) 0.09 ±0.02 (9.88)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

OUTLINE DRAWING (mm)

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM Spectrum Analyzer Power MeterAttenuatorDirectional Coupler C1, C2: 4700pF, 22uF in parallel Signal Generator Attenuator Power Meter Directional Coupler 4321 ZG=50Ω ZL=50Ω C1 C2 + - DC Power Supply VDD - + DC Power Supply VGG 5DUT Pre- amplifier Attenuator EQUIVALENT CIRCUIT

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection. Following conditions shall be avoided: a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes) b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion) c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene) d) Frequent on/off switching causing thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc. ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when thermal expansion forces are added). Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink. The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB. M3 screws are recommended with tightening torque 0.4 to 0.6Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads shall be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=40% (A) VDD (V) 1st 0.05 1.5 29.0 0.18 2nd 1.5 9.0 2.4 1.60 3rd 9.0 30.0 1.2 4.20 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long term reliability the module case temperature Tcase is better kept below 90°C. For an ambient temperature Tair=60°C and Pout=30W the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 53.2 °C Tch2 = Tair + 60.0 °C Tch3 = Tair + 67.8 °C 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA30H3340M RA30H3340M MITSUBISHI ELECTRIC 1 Aug 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity following 2 methods are recommended to control the output power: a) Non-linear FM modulation: By Gate voltage VGG. When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage current is flowing from the battery into the Drain. Around VGG=2.5V the output power and Drain current increases strongly. Around VGG=3.5V, latest at VGG=5V, the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The Gate voltage is used to set the Drain quiescent current for the required linearity. Oscillation: To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a 4.700pF chip capacitor, located close to the module, and a 22µF electrolytic capacitor. When an amplifier circuit around this module shows oscillation following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module ? b) Is the load impedance ZL=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time thermally induced mechanical stress. Quality and Failure in Time (FIT): MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating conditions exceeding those in Mobile Radios. The technology of this module is the result of more than 20 years experience, field proven in several 10 million Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which are caused by handling or operating conditions. Few degradation failures can be found. FIT calculation based on field failures: 3 years after shipping 2.7 million modules 20 modules with degradation failures had been returned. Assuming 1 hour operation every day in these 3 years results in 7 FIT. Not all field failures are returned and the FIT rate strongly depends on the operating conditions. Our target for this module technology is 500 FIT. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum e ffort into making semiconductor products better and more reliable, but there is always the po ssibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, aux iliary circuits, (ii) use o f non-flammable material or (iii) prevention against any malfunction or mishap.