RA30H1317M MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA30H 1317 M 135-175MHz 30W 12.5V MOBILE RADIO RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At V GG=5V, the typical gate current is 1 mA. This module is designed for non -linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
  • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 135-175MHz
  • Low-Power Control Current IGG=1mA (typ) at V GG=5V
  • Module Size: 66 x 21 x 9.88 mm
  • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H1317M-E01 RA30H1317M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray BLOCK DIAGRAM

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified ) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V 17 V VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V Pin Input Power 100 mW Pout Output Power f=135-175MHz, ZG=ZL=50Ω 45 W Tcase(OP) Operation Case Temperature Range -30 to +110 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified ) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 135 175 MHz Pout Output Power 30 W ηT Total Efficiency 40 % 2fo 2nd Harmonic -25 dBc ρin Input VSWR 3:1 — IGG Gate Current VDD=12.5V, VGG=5V, Pin=50mW 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE RA30 H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE DATA OUTPUT POWER, TOTAL EFFICIENCY, OUTPUT POWER, EFFICIENCY INPUT VSWR VS. FREQUENCY VS. INPUT POWER OUTPUT POWER, EFFICIENCY OUTPUT POWER, EFFICIENCY VS. INPUT POWER VS. INPUT POWER OUTPUT POWER, EFFICIENCY OUTPUT POWER, EFFICIENCY VS. DRAIN SUPPLY VOLTAGE VS. GATE SUPPLY VOLTAGE OUTPUT POWER, EFFICIENCY OUTPUT POWER, EFFICIENCY VS. GATE SUPPLY VOLTAGE VS. GATE SUPPLY VOLTAGE 130 140 150 160 170 180 FREQUENCY f(MHz) OUTPUT POWER Po(W) 100 120 TOTAL EFFICIENCY Eta(%) VDD=12.5V, Pin=50mW Po=30W(VGG:adj.) (VGG=5V at Po measure) ZG=ZL=50ohm, Tc=+25deg.C Po Eta ρin 0 20 40 60 80 100 INPUT POWER Pin(mW) OUTPUT POWER Po(W) 100 TOTAL EFFICIENCY Eta(%) Po Eta freq.=135MHz VDD=12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 0 2 4 6 8 10 12 DRAIN SUPPLY VOLTAGE (V DD) OUTPUT POWER Po(W) 100 120 TOTAL EFFICIENCY Eta(%) f=135/155/175MHz VGG=5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C Po Eta : 135MHz : 155MHz - - - - -: 175MHz 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE SUPPLY VOLTAGE ( V GG) OUTPUT POWER Po(W) 100 120 TOTL EFFICIENCY Eta(%) f=135MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tv=+25degC Po ETa 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE SUPPLY VOLTAGE (VGG) OUTPUT POWER Po(W) 100 120 TOTAL EFFICIENCY Eta(%) f=155MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C Po Eta 0 20 40 60 80 100 INPUT POWER Pin(mW) OUTPUT POWER Po(W) 100 TOTAL EFFICIENCY Eta(%) Po Eta freq.=155MHz VDD=12.5V, VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 0 20 40 60 80 100 INPUT POWER Pin(mW) OUTPUT POWER Po(W) 100 TOTAL EFFICIENCY Eta(%) Po Eta freq.=175MHz VDD=12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE SUPPLY VOLTAGE (V GG) OUTPUT POWER Po(W) 100 120 TOTAL EFFICIENCY Eta(%) f=175MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C Po Eta TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified )

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω , unless otherwise specified ) Now Preparing

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

12.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1 66.0 ±0.5 60.0 ±0.5 51.5 ±0.5 3.0 ±0.3 7.25 ±0.8 14.0 ±1 21.0 ±0.5 9.5 ±0.5 2.0 ±0.5 2-R2 ±0.5 17.0 ±0.5 1 2 3 4 3.1 +0.6/-0.4 7.5 ±0.5 2.3 ±0.3 (9.88) (50.4) 0.09 ±0.02

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS C1, C2: 4700pF, 22uF in parallel Directional Coupler Attenuator Power Meter Spectrum Analyzer Signal Generator Attenuator Pre- amplifier Power Meter Directional Coupler DUT 5 4 3 2 1 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD TEST BLOCK DIAGRAM Attenuator EQUIVALENT CIRCUIT 2 3

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the w ire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum of three seconds. Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=40% (A) VDD (V) 1st 0.05 5.0 4.5 0.95 2nd 5.0 30.0 1.2 5.0 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long-term reliability, it is best to keep the module case temperature (T case) below 90°C. For an ambient temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 31.2 °C Tch2 = Tair + 45.0 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RA30H 1317 M RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leaka ge current flows from the battery into the drain. Around VGG=4V, the output power and drain current increases substantially. Around VGG=4.5V (typical) to V GG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the mo dule? b) Is the load impedance ZL=50Ω ? c) Is the source impedance ZG=50Ω ? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reli able, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures suc h as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material, or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs!

RA30H1317M MITSUBISHI ELECTRIC 23 Dec 2002 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor

25 Boulevard des Bouvets

F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division

307 Alexandra Road

#3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group

1050 East Arques Avenue

Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division

348 Victoria Road

Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245