RA03M8894M

RA03M8894M MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

MITSUBISHI RF MOSFET MODULE RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

PACKAGE CODE: H46S

1 RF Input (Pin)

2 Gate Voltage (VGG), Power Control

3 Drain Voltage (VDD), Battery

4 RF Output (Pout)

5 RF Ground (Case)

The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 889-941MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power RoHS COMPLIANT
• RA03M8894M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA03M8894M-101 Antistatic tray, 25 modules/tray

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<3.5V 9.2 V VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V Pin Input Power 70 mW Pout Output Power f=889-941MHz, ZG=ZL=50Ω 5 W Tcase(OP) Operation Case Temperature Range -30 to +90 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 889 941 MHz Pout Output Power VDD=7.2V,VGG=3.5V, Pin=50mW 3.6 W ηT Total Efficiency 32 % 2fo 2nd Harmonic -30 dBc ρin Input VSWR 4:1 — IGG Gate Current Pout=3W (VGG control), VDD=7.2V, Pin=50mW 1 mA — Stability VDD=4.0-9.2V, Pin=25-70mW, Pout<5W (VGG control), Load VSWR=4:1 No parasitic oscillation — — Load VSWR Tolerance VDD=9.2V, Pin=50mW, Pout=3.6W (VGG control), Load VSWR=20:1 No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER 870 880 890 900 910 920 930 940 950 960 FREQUENCY f(MHz) OUTPUT POWER Pout(W) INPUT VSWR ρin (-) TOTAL EFFICIENCY ηT(%) VDD=7.2V Pin=50mW Pout @VGG=3.5V ηT @Pout=3.0W ρin @Pout=3.0W -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=889MHz, VDD=7.2V, VGG=3.5V Pout IDD Gp -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=914MHz, VDD=7.2V, VGG=3.5V Pout Gp IDD OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 23 45 678 9 10 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=889MHz, VGG=3.5V, Pin=50mW IDD -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) f=941MHz, VDD=7.2V, VGG=3.5V Pout Gp IDD 23 45 67 89 10 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=914MHz, VGG=3.5V, Pin=50mW IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 11 .5 22 .5 3 3.5 4 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=889MHz, VDD=7.2V, Pin=50mW IDD 23 45 678 9 10 DRAIN VOLTAGE VDD(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=941MHz, VGG=3.5V, Pin=50mW IDD 11 .5 2 2.5 33 .5 4 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=915MHz, VDD=7.2V, Pin=50mW IDD 11 .5 22 .5 3 3.5 4 GATE VOLTAGE VGG(V) OUTPUT POWER Pout(W) DRAIN CURRENT IDD(A) Pout f=941MHz, VDD=7.2V, Pin=50mW IDD

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS (4.4) 6.1 ±1 13.7 ±1 18.8 ±1 23.9 ±1 30.0 ±0.2 26.6 ±0.2 21.2 ±0.2 6.0 ±1 2.3 ±0.4 (1.7) 3.0 ±0.2 Ø0.45 ±0.15 3.5 ±0.2 1.5 ±0.2 2-R1.5 ±0.1 6.0 ±0.2 10.0 ±0.2 3 2 3.0 ±0.2 6.0 ±0.2 7.4 ±0.2 (5.4)

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

OUTLINE DRAWING (mm)

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 MeterAttenuatorDirectional Coupler C1, C2: 4700pF, 22uF in parallel Signal Generator Attenuator Pre- amplifier Attenuator Power Meter Directional Coupler 4321 ZG=50Ω ZL=50Ω C1 C2 - + DC Power Supply VGG + - DC Power Supply VDD 5DUT TEST BLOCK DIAGRAM EQUIVALENT CIRCUIT 2 3

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The lead (terminal) must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=7.2V and Pin=50mW each stage transistor operating conditions are: Stage Pin (W) Pout (W) Rth(ch-case) (°C/W) IDD @ ηT=32% (A) VDD (V) 1st 0.05 0.8 4.5 0.30 2nd 0.8 3.0 4.3 1.00 7.2 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=3W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (3W/32% – 3W + 0.05W) = 4.67 When mounting the module with the thermal resistance of 4.67W, the channel temperature of each stage transistor is: Tch1 = Tair + 36.3 °C Tch2 = Tair + 51.5 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions.

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA03M8894M RA03M8894M MITSUBISHI ELECTRIC 24 Jan 2006 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=2.5V, the output power and drain current increases substantially. Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ma y occur. Trouble with semiconductors may lead to personal injury , fire or propert y damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.