RA02M8087MD MITSUBISHI | Alldatasheet

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MITSUBISHI RF MOSFET MODULE RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 806 to 869 MHz range.

FEATURES

  • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
  • Pout>34dBm @ VDD=7.2V, Pin=16dBm Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) ,
  • ηT>30% @ VDD=7.2V, Pout=34dBm (Pin adjust.), Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
  • IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.) Two tone test at 1KHz separation Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.)
  • Broadband Frequency Range: 806-869MHz PACKAGE CODE: H46S

1 RF Input (Pin)

2 FIRST STAGE GATE BIAS DC SUPPLY TERMINALʢVgg1ʣ

3 FINAL STAGE GATE BIAS DC SUPPLY TERMINALʢVgg2ʣ

4 Drain Voltage (VDD), Battery

5 RF Output (Pout)

6 RF Ground (Case)

  • Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V
  • Module Size: 30 x 10 x 5.4 mm RoHS COMPLIANT
  • RA02M8087MD-101 is a RoHS compliant products.
  • RoHS compliance is indicate by the letter “G” after the Lot Marking.
  • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA02M8087MD-101 Antistatic tray, 25 modules/tray

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<3.5V 9.2 V VGG1 Gate Voltage VDD<7.2V, Pin=0mW 4 V VGG2 Gate Voltage VDD<7.2V, Pin=0mW 4 V Pin Input Power 100 mW Pout Output Power f=806-869MHz, ZG=ZL=50Ω 5 W Tcase(OP) Operation Case Temperature Range -30 to +90 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT f Frequency Range 806 869 MHz Pout Output Power VDD=7.2V,Pin(Single Carrier)=+16dBm, Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) 34 dBm ηT Total Efficiency 30 % 2fo 2nd Harmonic -30 dBc ρin Input VSWR 5.8:1 — IGG Gate Current VDD=7.2V,Pout (Single Carrier) =34dBm (,Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) 1 mA IMD3 3rd Inter Modulation Distortion -26 dBc IMD5 5th Inter Modulation Distortion VDD=7.2V,Pout (average)=31dBm(Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) , Two tone test at 1KHz separation -30 dBc GV Gain Variation VDD=7.2V,Pout (Single Carrier)=34dBm(Pin adjust.), Across specified frequency range Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) 0 4 dB — Stability Vdd=6.0/7.2/9.2V, Idq1=20mA(Vgg1 adjust), Idq2=300mA(Vgg2 adjust) , Po(Single Carrier)=15-34dBm(Pin control) LOAD VSWR=2:1(All Phase),Zg=50Ω No parasitic oscillation — — Load VSWR Tolerance Vdd=9.2V, Pout(Single Carrier)=34dBm (Pin adjust.), LOAD VSWR=2:1(All Phase),Zg=50Њ, Idq1=20mA(Vgg1 adjust.@Vdd=7.2V), Idq2=300mA(Vgg2 adjust.@Vdd=7.2V) No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice.

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) RA02M8087MD IMD3,IMD5 vs. Po -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 40 Po(2tone average)(dBm) IMD3,IMD5(dBc) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) Tc=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300m A RA02M8087MD Effi vs. Po 10 15 20 25 30 35 40 Po(single carrier)(dBm) Effi(%),Gp(dB) Gp Effi Tc=+25deg.C, Vdd=7.2V f=806 MHz, Idq 1st stager=20mA Idq Final Stage=300mA RA02M8087MD IMD3,IMD5 vs. Po -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 40 Po(2tone average)(dBm) IMD3,IMD5(dBc) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) Tc=+25deg.C, Vdd=7.2V f=824MHz, Idq 1st stager=20mA Idq Final Stage=300m A RA02M8087MD Effi vs. Po 10 15 20 25 30 35 40 Po(single carrier)(dBm) Effi(%),Gp(dB) Gp Effi Tc=+25deg.C, Vdd=7.2V f=824 MHz, Idq 1st stager=20mA Idq Final Stage=300mA RA02M8087MD IMD3,IMD5 vs. Po -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 40 Po(2tone average)(dBm) IMD3,IMD5(dBc) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) Tc=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300m A RA02M8087MD Effi vs. Po 10 15 20 25 30 35 40 Po(single carrier)(dBm) Effi(%),Gp(dB) Gp Effi Tc=+25deg.C, Vdd=7.2V f=851 MHz, Idq 1st stager=20mA Idq Final Stage=300mA RA02M808 7MD IMD3,IMD5 vs. Po -70 -60 -50 -40 -30 -20 -10 15 20 25 30 35 40 Po(2tone average)(dBm) IMD3,IMD5(dBc) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) Tc=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300m A RA02M8087MD Effi vs. Po 10 15 20 25 30 35 40 Po(single carrier)(dBm) Effi(%),Gp(dB) Gp Effi Tc=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300 mA

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ʶ ᶄᶃ ᶅᶆ ʶ ʶ ʶ ʶ Пʶ ᶇᶈ

2 Gate Voltage (VGG)

3 Drain Voltage (VDD)

4 RF Output (Pout)

5 RF Ground (Case)

OUTLINE DRAWING (mm)

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TEST BLOCK DIAGRAM (TWO TONE) TEST BLOCK DIAGRAM (SINGLE CARRIER)

2 Gate Voltage (VGG1)

3 Gate Voltage (VGG2)

4 Drain Voltage (VDD)

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS EQUIVALENT CIRCUIT 3 2 4

MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA02M8087MD RA02M8087MD MITSUBISHI ELECTRIC 31 Jan 2007 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Adjust.: Depending on linearity, the following two methods are recommended to adjust. the output power: a) Non-linear FM modulation: By the gate voltage (VGG). b) Linear modulation: By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module. b) Is the load impedance ZL=50Ω. c) Is the source impedance ZG=50Ω. Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ma y occur. Trouble with semiconductors may lead to personal injury , fire or propert y damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.