R8300N

R8300N NISSHINBO | Alldatasheet

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Technical content

36 V Input Voltage Detector with Release Delay Function for Automotive Applications

No. EC-295-180510 OUTLINE The R8300N is the 36V input voltage detector (VD) on the high-voltage CMOS process technology. Internally, the R8300N consists of a refer ence voltage unit, a hysteresis c omparator, a resistor net for setting detector threshold and an output driver transistor. The R8300NxxxA/ G provide a VDD pin detection and the R8300NxxxE provides a SENSE pin detection. The detector threshold range is 3.0 to 12 V, the detector threshold accuracy is ±1.5% (Ta = 25ºC). And, connecting an external capacitor to the CD pin can adjust the release output delay time (Power-on Reset Time). The output type is Nch open drain “L” output. The R8300N is available in a 6-pin SOT-23-6 package. Use of this package achieves high-density mounting on boards.

FEATURES

 Operating Voltage Range (Max.Rating) ··················· R8300NxxxA/R8300NxxxG: 1.4V to 36.0V (50.0V) R8300NxxxE: 2.4V to 6.0V (7.0V) R8300NxxxE: Typ. 3.5 µA

APPLICATIONS

 Voltage monitoring for electronic control units such as EV inverter and battery charge control unit

No. EC-295-180510 SELECTION GUIDE The detector threshold and the voltage detection type are user selectable options. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R8300Nxxx-TR-FE SOT-23-6 3,000 pcs Yes Yes xxx : Specify the detector thre shold (−VDET) in the range of 3.0 V (030) to 12.0 V (120) in 0.1 V step. Select the voltage detection type from the following; A: VDD Detection Type E: SENSE Detection Type G: VDD Detection without Hysteresis Type R8 Quality Class Operating Temp. Range Test Temp. AEC-Q1 00 −40°C to 125°C Low, 25°C, High Grade 1 BLOCK DIAGRAMS R8300N xxxA/R8300NxxxG DOUTVDD Vref GND Delay Circuit CD R8300NxxxE DOUTVDD Vref GND Delay Circuit CD SENSE

No. EC-295-18051 0 PIN DESCRIPTION 6 5 4 123 (mark side) SOT-23-6 Pin Configuration SOT -23-6 Pin Description Pin No. Symbol Description

1 CD Release Output Delay Time Set Pin

2 NC No Connection

NC No Connection ( R8300NxxxA/R8300NxxxG) SENSE VD Voltage SENSE Pin (R8300NxxxE)

4 VDD Input Supply Voltage Pin

5 GND Ground Pin

6 DOUT VD Output Pin, Nch Open Drain

No. EC-295-180510 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Item Rating Unit VDD Supply Voltage (R8300NxxxA/ R8300NxxxG) −0.3 to 50.0 V Supply Voltage (R8300NxxxE) −0.3 to 7.0 VDOUT D OUT Pin Output Voltage −0.3 to 7.0 V VCD C D Pin Output Voltage −0.3 to 7.0 V VSENSE SENSE Pin Input Voltage (R 8300NxxxE) −0.3 to 50.0 V IOUT D OUT Pin Output Current 20 mA PD Power Dissipation (1) S O T - 2 3 - 6 JEDEC STD. 51-7 Test Land Pattern 830 mW Tj Junction Temperature −40 to 150 °C Tstg Storage Temperature −55 to 150 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item Rating Unit VDD Operating Voltage (R8300NxxxA/ G)(2) 1.4 to 36.0 V Operating Voltage (R8300NxxxE)(2) 2.4 to 6.0 V VSENSE SENSE Pin Input Voltage (R8300NxxxE) 0 to 36.0 V Ta Operating Temperature Range −40 to 125 C RECOMMENDED OPERATING CONDITONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. The device electrical characteristics up to 125 ºC are evaluated at preproduction. (1) Refer to POWER DISSIPATION for detailed information. (2) Min. value in VIN (VDD) indicates the minimum operating voltage to define VDOUT.

No. EC-295-18051 0

ELECTRICAL CHARACTERISTICS

CD = 1000 pF, pulled-up to 5 V with 100 kΩ, unless otherwise specified. R8300NxxxA/R8300NxxxG (VDD Detection Type) (−40°C ≤ Ta ≤ 110°C) Symbol Item Conditions Min. Typ. Max. Unit ISS Supply Current VDD = −VDET −0.1 V 3.8 6.1 µA VDD = +VDET +1.0 V 3.8 6.4 −VDET Detector Voltage Ta = 25°C x 0.985 x 1.015 V −40°C ≤ Ta ≤ 110°C x 0.980 x 1.020 VHYS Detector Threshold Hysteresis R8300NxxxA 4.5 5 5.5 % R8300NxxxG 0 10 mV tPHL Detector Output Delay Time (1) 40 80 140 μs tdelay Release Output Delay Time (2) 6.5 10 14 ms IOUT Output Current (Nch Driver) V DD = 4.5 V, VDS = 0.05 V 0.5 2.0 mA RCD CD Discharge Tr. On- Resistance VDD = 13.0 V, VCD = 0.5 V 0.50 2.60 kΩ R8300NxxxE (SENSE Detection Type) (−40°C ≤ Ta ≤ 110°C) Symbol Item Conditions Min. Typ. Max. Unit RSENSE SENSE Resistance 4.5 51.5 MΩ -VDET Detector Threshold Ta = 25°C x 0.985 x 1.015 V −40°C ≤ Ta ≤ 110°C x 0.980 x 1.020 VHYS Detector threshold Hysteresis 4.5 5 5.5 % tPHL Detector Output Delay Time (4) V DD = 4.5 V 40 80 140 μs tdelay Release Output Delay Time (5) V DD = 4.5 V 6.5 10 14.0 ms IOUT Output Current (Nch Driver) VDD = 5.0 V, VDS= 0.05 V VSENSE = −VDET −0.1 V 0.5 2.0 mA RCD CD Discharge Tr. On- Resistance VDD = 4.5 V, VSENSE = 13.0 V, VCD = 0.5 V 0.50 2.60 kΩ (1) A time that VDOUT requires to reach 2.5 V when changed VDD from “−VDET + 1.0 V” to “−VDET − 0.5 V” (2) A time that VDOUT requires to reach 2.5 V when changed VDD from “−VDET − 0.5 V” to “−VDET + 1.0 V”. (3) Not including the current for SENSE resistance. (4) A time that VDOUT requires to reach 2.5 V when changed VSENSE from “−VDET + 1.0 V” to “−VDET − 1.0 V”. (5) A time that VDOUT requires to reach 2.5 V when changed +VSENSE from “+VDET − 1.0 V” to “+VDET + 1.0 V”.

No. EC-295-180510 ELECTRICAL CHARACTERISTICS (continued) R8300NxxxA/R8300NxxxG (VDD Detection Type) (−40°C ≤ Ta ≤ 125°C) Symbol Item Conditions Min. Typ . Max. Unit ISS Supply Current VDD = −VDET − 0.1 V 3.8 7.0 µA VDD = +VDET + 1.0 V 3.8 7.5 −VDET Detector Voltage Ta = 25°C x 0.985 x 1.015 V −40°C ≤ Ta ≤ 125°C x 0.978 x 1.025 VHYS Detector Threshold Hysteresis R8300NxxxA 4.3 5 5.5 % R8300NxxxG 0 10 mV tPHL Detector Output Delay Time (1) 38 80 160 μs tdelay Release Output Delay Time (2) 6.0 10 18.0 ms IOUT Output Current (Nch Driver) V DD = 4.5 V, VDS = 0.05 V 0.4 2.0 mA RCD CD Discharge Tr. On- Resistance VDD = 13.0 V, VCD = 0.5 V 0.50 3.40 kΩ R8300NxxxE (SENSE Detection Type) (−40°C ≤ Ta ≤ 125°C) Symbol Item Conditions Min. Typ . Max. Unit RSENSE SENSE Resistance 3.2 51.5 MΩ -VDET Detector Threshold Ta = 25°C x 0.985 x 1.015 V −40°C ≤ Ta ≤ 125°C x 0.978 x 1.025 VHYS Detector threshold Hysteresis 4.3 5 5.5 % tPHL Detector Output Delay Time (4) V DD = 4.5 V 38 80 160 μs tdelay Release Output Delay Time (5) V DD = 4.5 V 6.0 10 18.0 ms IOUT Output Current (Nch Driver) VDD = 5.0 V, VDS = 0.05 V VSENSE = −VDET − 0.1 V 0.4 2.0 mA RCD CD Discharge Tr. On- Resistance VDD = 4.5 V, VSENSE = 13.0 V, VCD = 0.5 V 0.50 3.40 kΩ (1) A time that VDOUT requires to reach 2.5 V when changed VDD from “−VDET + 1.0 V” to “−VDET − 0.5 V” (2) A time that VDOUT requires to reach 2.5 V when changed VDD from “−VDET − 0.5 V” to “−VDET + 1.0 V”. (3) Not including the current for SENSE resistance. (4) A time that VDOUT requires to reach 2.5 V when changed VSENSE from “−VDET + 1.0 V” to “−VDET − 1.0 V”. (5) A time that VDOUT requires to reach 2.5 V when changed +VSENSE from “+VDET − 1.0 V” to “+VDET + 1.0 V”.

No. EC-295-180510 Product-specific Electrical Characteristics R8300NxxxA/E/G Product-specific Electrical Characteristics Product Name −VDET [V] Ta = 25°C −40 °C ≤ Ta ≤ 110°C −40 °C ≤ Ta ≤ 125°C

No. EC-295-180510 R8300NxxxA/E/G Product-specific Electrical Characteristics Product Name −VDET [V] Ta = 25°C −40 °C ≤ Ta ≤ 110°C −40 °C ≤ Ta ≤ 125°C

No. EC-295-180510 R8300NxxxA/E/G Product-specific Electrical Characteristics Product Name −VDET [V] Ta = 25°C −40 °C ≤ Ta ≤ 110°C −40 °C ≤ Ta ≤ 125°C

No. EC-295-180510 THEORY OF OPERATION R8300NxxxA (VDD Detection Type) Vref Ra Rb Rc VDD DOUT(1) GND Tr.1 Nch Comparator Delay Circuit CD 1 Schematic Diagram for R8300NxxxA with External Capacitor Released Voltage +VDET Detector Threshold –VDET 1 3 5 Supply Voltage (VDD) Minimum Operating Voltage V GND GND A B Release Output Delay Time tdelay Output Voltage (VDOUT) Pull-up Voltage Hysteresis Range(2) Detect Output Delay Time tPHL Undefined Operating Condition 1 2 3 4 5 Comparator (-) pin Input Voltage I II II II I Comparator Output L H Undefined HL Tr.1 OFF ON Undefined ON OFF Output Tr. (Nch) OFF ON Undefined ON OFF Ix VDD Rb + Rc Ra + Rb + Rc II x VDD Rb Ra + Rb R8300NxxxA Operating OPERATION 1. The output voltage is equal to the pull-up voltage. 2. At A point, Vref ≥ VDD x (Rb+Rc) / (Ra+Rb+Rc) is true. So, the comparator output volt age will be reversed from “L” to “H”. As a result, the output voltage will be “L”. 3. If the supply voltage remains lower than the minimum operating voltage, the output voltage will be undefined. 4. The “L” voltage is output. 5. At B point, Vref ≤ VDD x Rb / (Ra+Rb) is true. So, the comparator output voltage will be reversed from “H” to “L”. As a result, output voltage will be equal to the pull-up voltage. (1) The DOUT pin should be pulled-up to an external voltage level. (2) Hysteresis is a voltage differential between the released voltage and the detector threshold.

No. EC-295-180510 R8300NxxxG (VDD Detection Type) Vref Ra Rb VDD DOUT(1) GND Nch Comparator Delay Circuit CD 1 Schematic Diagram for R8300NxxxG with External Capacitor Released Voltage +VDET(2) Detector Threshold –VDET 1 3 5 Supply Voltage (VDD) Minimum Operating Voltage V GND GND A B Release Output Delay Time tdelay Output Voltage (VDOUT) Pull-up Voltage Detect Output Delay Time tPHL Undefined Operating Condition 1 2 3 4 5 Comparator (-) pin Input Voltage I I I I I Comparator Output L H Undefined HL Tr.1 OFF ON Undefined ON OFF Output Tr. (Nch) OFF ON Undefined ON OFF Ix V DD Rb Ra + Rb R8300NxxxA Operating OPERATION 1. The output voltage is equal to the pull-up voltage. 2. At A point, Vref ≥ VDD x Rb / (Ra+Rb) is true. So, the comparator output voltage will be reversed from “L” to “H”. As a result, the output voltage will be “L”. 3. If the supply voltage remains lower than the minimum operating voltage, the output voltage will be undefined. 4. The “L” voltage is output. 5. At B point, Vref ≤ VDD x Rb / (Ra+Rb) is true. So, the comparator output voltage will be reversed from “H” to “L”. As a result, output voltage will be equal to the pull-up voltage. (1) The DOUT pin should be pulled-up to an external voltage level. (2) As for R8300NxxxG, whether or not Chattering may occur at detecting / Release depends on the tilt of supply voltage fluctuations. If the chattering becomes a problem, connect a capacitor of 10nF or more with the CD pin.

No. EC-295-180510 R8300xxxE (SENSE Detection Type) Vref Ra Rb Rc VDD DOUT(1) GND Tr.1 Nch Comparator Delay Circuit CD SENSE Schematic Diagram for R8300xxxE with External Capacitor Released Voltage +VDET Detector Threshold -VDET 1 2 3 SENSE Pin Voltage (VSENSE) GND GND A B Release Daly Time tDELAY Output Voltage VDOUT Hysteresis Range(2) Detecting Delay Time tPHL Pull-up Voltage Operating Condition 1 2 3 Comparator (-) pin Input voltage I II I Comparator Output L H L Tr.1 OFF ON OFF Output Tr. (Nch) OFF ON OFF I x V SENSE Rb + Rc Ra + Rb + Rc II x VSENSE Rb Ra + Rb R8300NxxxE Operating OPERATION 1. The SENSE pin voltage is higher than the detector threshold; the output voltage is equal to the pull-up voltage. 2. At A point, Vref ≥ VSENSE x (Rb+Rc) / (Ra+Rb+Rc) is true. So, the comparator output voltage will be reversed from “L” to “H”. As a result, the output voltage will be “L”. I f the supply voltage remains higher than the minimum operating voltage, the output voltage will stay in “L”. 3. At B point, Vref ≤ VSENSE x Rb / (Ra+Rb) is true. So, the comparator output voltage will be reversed from “H” to “L”. As a result, output voltage will be equal to the pull-up voltage. (1) The DOUT pin should be pulled-up to an external voltage level. (2) Hysteresis is a voltage differential between the released voltage and the detector threshold.

No. EC-295-180510 TIMING CHARTS VDD VDOUT −VDET +VDET tPHL tdelay Pull-up Voltage tPHL Undefined R8300NxxxA/R8300NxxxG (VDD Detection Type) SENSE Undefined VDOUT −VDET +VDET tPHL tdelay Pull-up Voltage VDD VIN MIN Undefined tdelay tPHL R8300NxxxE (SENSE Detection Type)

No. EC-295-180510 POWER SEQUENCE The R8300NxxxE is a SENSE volt age detection type which supervis es the SENSE pin voltage. When powering up, either the VDD pin or the SENSE pin can power up first. In the case of powering up the V DD pin from the minimum voltage or lower, after the powering up o f the SENSE pin, the VDD pin have to be powered up 10 V/ms or less. In the case of powering down the V DD pin, the SENSE pin has to be powered down first. After the det ect output delay time (treset), the VDD pin has to be powered down. GLITCH DETECTION by VDD and SENSE PINS The following graphs are the released conditions when a pulse v oltage less than or equal to the detector threshold (−VDET) is applied to VDD (R8300NxxxA/G) / VSENSE (R8300NxxxE) pin during the release operation. This graph indicates the maximum pulse condition. If a pulse increased in width and voltage is applied to VDD (R8300NxxxA/G) / VSENSE (R8300NxxxE), the reset signal may occur. R8300NxxxA/G Pulse Width vs. Over Drive Voltage R8300NxxxE Pulse Width vs. Over Drive Voltage –VDET Overdrive Voltage Pulse Width VDD / VSENSE VDD/VSENSE Input Waveform 1 10 100 1000 Over Drive Voltage (mV) Pulse Width ( s) R8300N030A R8300N120A 1 10 100 1000 Over Drive Voltage (mV) Pulse Width ( s) R8300N030E R8300N120E

No. EC-295-180510 RELEASE OUTPUT DELAY TIME (tdelay) When the voltage higher than the released voltage is applied to the VDD / SENSE pin while the voltage lower than the detector threshold is applied to VDD/ SENSE pin, charging the external capacitor starts and the CD pin voltage (VCD) is increased. The output voltage maintains the released outpu t until VCD reaches the threshold voltage of the release output delay pin (VTCD). And when VCD is over VTCD, the output voltage is inverted from the detected output to the released output. That is, the charged external capacitor starts discharging. VTCD GND GND +VDET tdelay VDD / VSEN SE VCD VDOUT –VDET R8300NxxxA/E/G Released Output Delay Timing Diagram Release Output Delay Time (tdelay ) indicates the time between t he instance when V DD / VSENSE shift from “+VDET -1.0 V” to “+VDET+1.0 V” by the application of a pulse voltage and the instance when the output voltage reaches 2.5 V after pulled up the output pin (DOUT) to 5.0 V with a resistor of 100 kΩ. This is given by the expression tdelay (s) = CD x107CD, where CD (F) represents capacitance of the external capacitor. + VDET+1.0V +VDET –1.0V VDD / VSENSE GND 5.0V 2.5V GND VDOUT tdelay +VDET R8300NxxxA/E/G Released Output Delay Time

No. EC-295-180510

APPLICATION INFORMATION

TYPICAL APPLICATION CIRCUIT CD R8300NxxxA/G VR or DC/DC VDD CD GND DOUT Microprocessor R8300NxxxA/G Typical Application Circuit CD R8300NxxxE SENSE CD GND DOUT VDD VR or DC/DC Microprocessor R8300NxxxE Typical Application Circuit

No. EC-295-180510 TECHNICAL NOTES When connecting resistors to the device’s input pin When connecting a resistor (R1) to an input of this device, the input voltage decreases by [Device’s Consumption Current] x [Resistance Value] only. And, the cross conduction current (1), which occurs when changing from the detecting state to the release state, is decreased the input voltage by [Cross Conduction Current] x [Resistance Value] only. And then, this device will enter the re-detecting state if the input voltage reduction is larger than the difference between the detector voltage and the released voltage. When the input resistance value is large and the VDD is gone up at mildly in the vicinity of the released voltage, repeating the above operation may result in the occurrence of output. As shown in Figure A/B, set R1 to become 100 kΩ or less as a guide, and connect CIN of 0.1 μF and more to between the input pin and GND. Besides, make evaluations inc luding temperature properties under the actual usage condition, with using the evaluation board like th is way. As result, make sure that the cross conduction current has no problem. VDD GND OUT pin CIN(2) Figure A Voltage Detector VDD GND OUT pin CIN(2) Figure B Voltage Detector (1) In the CMOS output type, a charging current for OUT pin is included. (2) Note the bias dependence of capacitors.

No. EC-295-180510 Prohibited Area of Supply Voltage Fluctuations (VDD Voltage Detection Type) As for the steep change of the supply voltages in the prohibited area as shown in Figure C, the detector may cause a false detection if the supply voltage is over the detector threshold, as shown in Figure D. 0. 01 0.1 1 10 100 Input Voltage Falling T ime T F (μs) Input Voltage peak to peak Vpp (V) Prohibited Area VDD -VDET +VDET tf VP-P GND Figure C. Prohibited Area Figure D

No. EC-295-180510 TYPICAL CHARACTERISTICS Note: Typical Characteristics are intended to be used as reference data; they are not guaranteed. 1) Supply Current vs. Input Voltage R8300N030A/G 0 4 8 1 21 62 02 42 83 23 6 Input Voltage VDD (V) Supply Current Iss ( A) R8300N083A/G 0 4 8 12 16 20 24 28 32 36 Input Voltage VDD (V) Supply Current Iss ( A) R8300N120A/G 0 4 8 12 16 20 24 28 32 36 Input Voltage VDD (V) Supply Current Iss ( A) R8300NxxxE (VSENSE = −VDET −0.1 V) 0123456 Input Voltage VDD (V) Supply Current Iss ( A) R8300NxxxE (VSENSE = +VDET +0.1 V) 0123456 Input Voltage VDD (V) Supply Current Iss ( A) (VSENSE = −VDET −0.1 V) (VSENSE = +VDET +0.1 V)

No. EC-295-180510 2) Detector Threshold vs. Temperature R8300N030A/G R8300N030E R8300N083A/G R8300N083E R8300N120A/G R8300N120E 2.94 2.97 3.00 3.03 3.06 3.09 3.12 3.15 3.18 -40 -15 10 35 60 85 110 Detector Threshold VDET(V) Operation Temperature Ta (°C) +VDET -VDET 2.94 2.97 3.00 3.03 3.06 3.09 3.12 3.15 3.18 -40 -15 10 35 60 85 110 Detector Threshold VDET(V) Operation Temperature Ta (°C) +VDET -VDET VDD= 5.0V 8.10 8.20 8.30 8.40 8.50 8.60 8.70 8.80 -40 -15 10 35 60 85 110 Detector Threshold VDET (V) Operation Temperature Ta (°C) -VDET +VDET 8.10 8.20 8.30 8.40 8.50 8.60 8.70 8.80 -40 -15 10 35 60 85 110 Detector Threshold VDET(V) Operation Temperature Ta (°C) -VDET +VDET VDD= 5.0V 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 -40 -15 10 35 60 85 110 Detector Threshold VDET(V) Operation Temperature Ta (°C) +VDET -VDET 11.8 11.9 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 12.8 -40 -15 10 35 60 85 110 Detector Threshold VDET (V) Operation Temperature Ta (°C) -VDET +VDET VDD= 5.0V R8300N030A Only R8300N083A Only R8300N120A Only

No. EC-295-180510 3) Detector Threshold vs. Input Voltage R8300N030E 2.94 2.96 2.98 3.00 3.02 3.04 3.06 Input Voltage VDD (V) Detector Threshold -VDET (V) Ta=-40℃ Ta=25℃ Ta=125℃ R8300N120E 11.6 11.7 11.8 11.9 12.0 12.1 12.2 12.3 Input Voltage V DD (V) Detector Threshold -VDET (V) Ta=-40℃ Ta=25℃ Ta=125℃ 4) Release Voltage vs. Input Voltage R8300N030E 3.09 3.11 3.13 3.15 3.17 3.19 3.21 Input Voltage VDD (V) Detector Threshold +VDET (V) Ta=-40℃ Ta=25℃ Ta=125℃ R8300N120E 12.2 12.3 12.4 12.5 12.6 12.7 12.8 12.9 Input Voltage VDD (V) Detector Threshold +VDET (V) Ta=-40℃ Ta=25℃ Ta=125℃

No. EC-295-180510 5) Output Voltage vs. Input Voltage (Ta = 25°C, DOUT: pulled-up to 5.0 V with 100 kΩ) R8300N030A 00 . 511 . 522 . 533 . 54 Input Voltage VDD (V) Output Voltage VOUT (V) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N083A 02468 1 0 Input Voltage VDD (V) Output Voltage VOUT (V) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N120A 0 2 4 6 8 10 12 14 Output Voltage VOUT (V) Input Voltage VDD (V) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N030G 6) Output Voltage vs. SENSE Pin Voltage (VDD = 5.0 V, DOUT: pulled-up to 5.0 V with 100 kΩ） R8300N083E 02468 1 0 SENSE Voltage VSENSE (V) Output Voltage VOUT (V) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N120E 02468 1 0 1 2 1 4 SENSE Voltage VSENSE (V) Output Voltage VOUT (V) Ta=125℃ Ta=25℃ Ta=-40℃ Input Voltage VDD (V) Output Voltage VOUT (V) Ta=125℃ Ta=25℃ Ta=-40℃

No. EC-295-180510 7) Nch. Driver Output Current vs. Input Voltage R8300N030A (VDOUT = 0.5V) 00 . 511 . 522 . 533 . 54 Input Voltage V DD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N120A (VDOUT = 0.5V) 02468 1 0 1 2 1 4 Input Voltage VDD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N030A (VDOUT = 0.05 V) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VDD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃ R8300N120A (VDOUT = 0.05 V) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0369 1 2 1 5 Input Voltage V DD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃ R8300NxxxE (VSENSE = −VDET −1.0 V, VDOUT = 0.5 V) 0123456 Input Voltage V DD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃ R8300NxxxE (VSENSE = −VDET −1.0 V, VDOUT = 0.05 V) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0123456 Input Voltage V DD (V) Nch Driver Output Current I OUT (mA) Ta=125℃ Ta=25℃ Ta=-40℃

No. EC-295-180510 8) Nch. Driver Output Current vs. VDS (Ta = 25°C) R8300NxxxA/G 0123456 VD S (V) Nch Driver Output Current I OUT (mA) V DD=8V V DD=5.0V V DD=4.0V V DD=3.5V V DD=3.0V V DD=2.4V R8300NxxxE 0123456 VD S (V) Nch Driver Output Current I OUT (mA) VD D =6V VD D =5V VDD=3.5V VD D =3 VD D =2.4 9) Detector Delay Time vs. Temperature R8300NxxxA/G 100 120 140 -40 -15 10 35 60 85 110 Ambient Temperature Ta [°C] Detect Delay Time t RESET (s) R8300NxxxE 100 120 140 -40 -15 10 35 60 85 110 Ambient Temperature Ta [°C] Detect Delay Time t RESET (s) VDD=5.0V 10) Release Delay Time vs. Temperature (CD = 1.0µF) R8300NxxxA/G -40 -15 10 35 60 85 110 Operation Temperature Ta [°C] Release Delay Time t DELAY (ms) R8300NxxxE -40 -15 10 35 60 85 110 Operation Temperature Ta [°C] Release Delay Time t DELAY (ms) VDD=5.0V

No. EC-295-180510 11) Detector Delay Time vs. Input Voltage 12) Release Delay Time vs. Input Voltage R8300NxxxE 100 120 Detect Delay Time t RESET (s) Input Voltage VDD (V) Ta=125 ℃ Ta=25 ℃ Ta=-40 ℃ R8300NxxxE Input Voltage VDD (V) Release Delay Time t DELAY (ms) Ta=125℃ Ta=25℃ Ta=-40℃ 13) Release Delay Time vs. External Capacitor for CD Pin (Ta = 25°C) R8300NxxxA/G 0.01 0.1 100 1000 0.001 0.1 10 1000 External Capacitance CCD (nF) Delay time tdelay/ treset (ms) tdelay treset R8300NxxxE 0.01 0.1 100 1000 0.001 0.1 10 1000 External Capacitance CCD (nF) Delay time tdelay/ treset (ms) tdelay treset

POWER DISSIPATION SOT-23-6 Ver. A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51-7. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes φ 0.3 mm × 7 pcs Measurement Result (Ta = 25°C, Tjmax = 150°C) Item Measurement Result Power Dissipation 830 mW Thermal Resistance (θja) θja = 150°C/W Thermal Characterization Parameter (ψjt) ψjt = 51°C/W θja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 700 800 900 1000 0 25 50 75 100 125 150 Power Dissipation PD (mW) Ambient Temperature (°C) 830

PACKAGE DIMENSIONS SOT-23-6 Ver. A i 2.9±0.2 1.9±0.2 (0.95) (0.95) 6 4 1 2 3 1.6-0.1 +0.2 2.8±0.3 0.4-0.2 Unit : mm +0.1 0.8±0.1 1.1-0.1 +0.2 0 to 0.1 0.15-0.05 +0.1 0.2MIN.

1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for automotive applications. Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.

• Aerospace Equipment
• Equipment Used in the Deep Sea
• Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
• Life Maintenance Medical Equipment
• Fire Alarms / Intruder Detectors
• Vehicle Control Equipment (airplane, railroad, ship, etc.)
• Various Safety Devices
• Traffic control system
• Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with y our company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/