R8008ANJ

R8008ANJ ROHM | Alldatasheet

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www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R8008ANJ Nch 800V 8A Power MOSFET Tj °C mJEAR Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current 4.0 EAS *3 3.4 mJ PD 40 4.2 ID,pulse ID *1 4.3 A A V30 V/ns 150 Reverse diode dv/dt IAS Range of storage temperature Tstg Power dissipation (Tc = 25°C) W Junction temperature A dv/dt *5 15 -55 to +150 Unit 800VDSS ID *1 A V TL Marking R8008ANJ lFeatures VGSS 32 Continuous drain current Basic ordering unit (pcs) Pulsed drain current Gate - Source voltage Parameter Tc = 100°C Switching Power Supply 8.0 Value Tc = 25°C Symbol lAbsolute maximum ratings (Ta = 25°C) Drain - Source voltage lOutline lInner circuit lPackaging specifications LPT(S) (SC-83) 800V 0.98W 40W 5) Parallel use is easy. VDSS RDS(on) (Max.) ID PD 1) Low on-resistance. 4) Drive circuits can be simple. 2) Fast switching speed. Tape width (mm) 24 3) Gate-source voltage (VGSS) guaranteed to be 30V. lApplication Reel size (mm) 6) Pb-free lead plating ; RoHS compliant Taping 330 Type Packaging 1,000 Taping code (2) (1) (3) (1) Gate (2) Drain (3) Source *1 BODY DIODE 1/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ WGate input resistance RG f = 1MHz, open drain - 6.4 - Static drain - source on - state resistance WTj = 25°C - 0.75 0.98 Tj = 125°C - RDS(on) VGS = 10V, ID = 4.0A 1.70 - Unit Max. 900 - 80 Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3 Gate - Source leakage current VGS = 30V, VDS = 0V - V5 Thermal resistance, junction - ambient *6 Soldering temperature, wavesoldering for 10s lElectrical characteristics (Ta = 25°C) Parameter Drain - Source breakdown voltage VDS = 800V, VGS = 0V Unit Tsold RthJA Min. RthJC Symbol Unit °C/W Values V/ns Tj = 125°C 3.13- °C- 265 °C/W Drain - Source avalanche breakdown voltage - 800 ConditionsSymbol V(BR)DSS Min. Values Typ. 100 Zero gate voltage drain current V(BR)DSS VGS = 0V, ID = 4.0A VGS = 0V, ID = 1mA IDSS IGSS - nA Tj = 125°C V V 0.1 mA 1000 100- Tj = 25°C Drain - Source voltage slope dv/dt VDS = 640V, ID = 8.0A Typ. Symbol Conditions Values lAbsolute maximum ratings lThermal resistance Thermal resistance, junction - case Parameter Max. Parameter 2/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Mounted on a epoxy PCB FR4 (25mm × 27mm × 0.8mm) *7 Pulsed Max. Reverse transfer capacitance lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. 4.0Transconductance Input capacitance 2.0 Output capacitance Coss VDS = 25V - - S Ciss VGS = 0V - 1100 - gfs *7 VDS = 10V, ID = 4.0A pF- Crss f = 1MHz - 35 - 500 pF - 30.7 - - 81.8 Turn - on delay time td(on) *7 VDD ⋍ 400V, VGS = 10V - Effective output capacitance, energy related Effective output capacitance, time related Co(er) Co(tr) VGS = 0V VDS = 0V to 640V RG = 10W - Turn - off delay time td(off) *7 RL = 100W - Fall time tf Typ. ns 90 - 30 - Max. Unit nC Parameter lGate Charge characteristics (Ta = 25°C) Rise time tr *7 ID = 4.0A Symbol Values VGS = 10V - 9 - Min. 40 - Conditions Total gate charge Gate - Source charge Qgs *7 ID = 8.0A Qg *7 VDD ⋍ 400V 20 - 7.5 VGate plateau voltage V(plateau) VDD ⋍ 400V, ID = 8.0A - - Gate - Drain charge Qgd 3/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ 0.196 Unit Symbol Rth3 0.607 Cth3 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Rth2 0.259 Cth2 0.00771 0.0676 Cth1Rth1 0.00214 K/W Ws/K UnitValue lTypical Transient Thermal Characteristics Symbol Value Parameter Symbol Conditions Values Unit Min. Typ. Max. 8 A Inverse diode direct current, pulsed ISM *2 - - 32 A Inverse diode continuous, forward current IS *1 Tc = 25°C - - Forward voltage VSD *6 VGS = 0V, IS = 8.0A - - 1.5 V Reverse recovery time trr IS = 8.0A di/dt = 100A/ms - 645 - ns Reverse recovery charge Qrr *6 - 7.3 - mC Peak reverse recovery current Irrm *6 - 22 - A - A/msPwak rate of fall of reverse recovery current dirr/dt Tj= 25°C - 700 4/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 100 120 0 50 100 150 200 0.0001 0.001 0.01 0.1 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 80ºC/W top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single Fig.1 Power Dissipation Derating Curve Power Dissipation : PD/PD max. [%] Junction Temperature : Tj [°C] Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r(t) Pulse Width : PW [s] 5/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 0.01 0.1 1 10 100 Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 Ta=25ºC 100 120 0 25 50 75 100 125 150 175 Fig.3 Avalanche Current vs Inductive Load Avalanche Current : IAR [A] Coil Inductance : L [mH] Fig.4 Avalanche Power Losses Avalanche Power Losses : PAR [W] Frequency : f [Hz] Fig.5 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] Junction Temperature : Tj [ºC] 6/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 0 2 4 6 8 10 Ta=150ºC Pulsed VGS= 10.0V VGS= 4.5V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 5.5V VGS= 5.0V VGS= 6.0V 0 10 20 30 40 50 Ta=150ºC Pulsed VGS= 10.0V VGS= 4.5V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.0V VGS= 5.5V 0 1 2 3 4 5 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.5V Ta=25ºC Pulsed 0 10 20 30 40 50 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.5V Ta=25ºC Pulsed Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) Fig.8 Tj = 150°C Typical Output Characteristics(I) Fig.9 Tj = 150°C Typical Output Characteristics(II) Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Drain Current : ID [A] Drain Current : ID [A] Drain Current : ID [A] Drain - Source Voltage : VDS [V] Drain Current : ID [A] Drain - Source Voltage : VDS [V] 7/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 700 750 800 850 900 950 1000 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 150 VDS= 10V ID= 1mA 0.01 0.1 0.01 0.1 1 10 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC VDS= 10V Fig.11 Typical Transfer Characteristics Fig.10 Breakdown Voltage vs. Junction Temperature Drain - Source Breakdown Voltage : V(BR)DSS [V] Drain Current : ID [A] Fig.12 Gate Threshold Voltage vs. Junction Temperature Gate Threshold Voltage : VGS(th) [V] Junction Temperature : Tj [°C] Fig.13 Transconductance vs. Drain Current Transconductance : gfs [S] Drain Current : ID [A] Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V] 0.001 0.01 0.1 0 2 4 6 8 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VDS= 10V 8/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 0.5 1.5 2.5 0 5 10 15 20 ID = 8A ID = 4A Ta=25ºC 0.01 0.1 0.01 0.1 1 10 Ta=25ºC VGS= 10V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 VGS= 10V ID = 1.5A 0.01 0.1 0.01 0.1 1 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 10V Fig.14 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [W] Gate - Source Voltage : VGS [V] Fig.15 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Junction Temperature : Tj [ºC] Fig.16 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] Drain Current : ID [A] Static Drain - Source On-State Resistance : RDS(on) [W] Drain Current : ID [A] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 9/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 100 1000 10000 0.01 0.1 1 10 100 1000 Ta=25ºC f = 1MHz VGS = 0V Coss Crss Ciss 100 1000 10000 100000 0.01 0.1 1 10 tr tf td(on) td(off) Ta = 25ºC VDD = 400V VGS = 10V RG= 10W 0 10 20 30 40 50 60 70 80 Ta = 25ºC VDD= 400V ID= 8A Fig.18 Typical Capacitance vs. Drain - Source Voltage Capacitance : C [pF] Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics Switching Time : t [ns] Drain Current : ID [A] Fig.21 Dynamic Input Characteristics Total Gate Charge : Qg [nC] Gate - Source Voltage : VGS [V] Coss Stored Energy : EOSS [uJ] Fig.19 Coss Stored Energy Drain - Source Voltage : VDS [V] 0 200 400 600 800 Ta=25ºC 10/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lElectrical characteristic curves 0.01 0.1 0.0 0.5 1.0 1.5 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS=0V Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 1000 10000 0.1 1 10 Ta=25ºC di / dt = 100A / ms VGS = 0V 11/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform 12/13 2013.10 - Rev.A

www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Data Sheet R8008ANJ lDimensions (Unit : mm) Dimension in mm / inches LPTS e b L2E c H Lp L l2 l1 x B A B e b5 D A Pattern of terminal position areas [Not a recommended pattern of soldering pads] MIN MAX MIN MAXA1 0.00 0.30 0.000 0.012 A2 4.30 4.70 0.169 0.185 b 0.68 0.98 0.027 0.039 b3 1.14 1.44 0.045 0.057 c 0.30 0.60 0.012 0.024 c1 1.10 1.50 0.043 0.059 D 9.80 10.40 0.386 0.409 E 8.80 9.20 0.346 0.362 e HE 12.80 13.40 0.504 0.528 L 2.70 3.30 0.106 0.130 L1 0.90 1.50 0.035 0.059 Lp 0.90 1.50 0.035 0.059 x - 0.25 - 0.010 MIN MAX MIN MAXb5 - 1.23 - 0.049 b6 - 10.40 - 0.409 l1 - 2.10 - 0.083 l2 - 7.55 - 0.297 l3 - 13.40 - 0.528 DIM MILIMETERS INCHES 0.25 0.010 8.90 0.350 2.54 0.100 1.10 0.043 7.25 0.285 1.00 0.039 DIM MILIMETERS INCHES 13/13 2013.10 - Rev.A

R1102Awww.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://www.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifica- tions : Although ROHM is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 10) 11) 12) 13) 14)