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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET R6015ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching Packaging specifications Inner circuit Package Bulk Code - Basic ordering unit (pieces) 360 R6015ANZ Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS 30 V Continuous I D 15 A Pulsed I DP 60 A Continuous I S 15 A Pulsed I SP 60 A Avalanche current IAS 7.5 A Avalanche energy EAS 15 mJ Power dissipation P D 110 W Channel temperature T ch 150 C Range of storage temperature T stg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25°C *3 Limited only by maximum channel temperature allowed. *4 TC=25°C Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 1.13 C / W * TC=25°C Parameter Type Source current (Body Diode) Drain current Parameter (1) Gate (2) Drain (3) Source 1 BODY DIODE 15.5 φ3.6 5.5 3.0 2.0 3.0 0.9 5.455.45 0.75 2.0 4.5 2.0 14.5 16.5 26.5 2.5 14.8 0.44 16.5 3.5 10.0 T O-3PF (1) (2) (3) (1) (3)(2) (1) Gate (2) Drain (3) Source 1/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6015ANZ Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 100 nA V GS=30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 600 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS - - 100 AV DS=600V, VGS=0V Gate threshold voltage V GS (th) 2.95 - 4.15 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 4.5 - - S V DS=10V, ID=7.5A Input capacitance C iss - 1700 - pF V DS=25V Output capacitance C oss - 1120 - pF V GS=0V Reverse transfer capacitance C rss - 80 - pF f=1MHz Turn-on delay time t d(on) - 50 - ns V DD 300V, ID=7.5A Rise time t r - 50 - ns V GS=10V Turn-off delay time t d(off) - 150 - ns R L=40 Fall time t f - 60 - ns R G=10 Total gate charge Q g - 50 - nC V DD 300V Gate-source charge Q gs -8 - n C I D=15A Gate-drain charge Q gd - 20 - nC V GS=10V *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward voltage V SD - - 1.5 V I S=15A, VGS=0V *パルス 0.23 0.3 Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) ID=7.5A, VGS=10V- 2/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6015ANZ Electrical characteristic curves 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.1 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25℃ Single Pulse Tester : TMR-850 Rth(ch-a)=28.6℃/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0 10 20 30 40 50 VGS= 4.5V VGS= 5.0V VGS= 5.5V VGS= 6.0V VGS= 6.5V VGS= 8.0V VGS= 7.0V VGS= 10.0V Ta=25℃ pulsed Fig.2: Typical output characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN CURRENT: ID (A) 0 1 2 3 4 5 VGS= 4.5V VGS= 5.0V VGS= 5.5V VGS= 6.0V VGS= 6.5V VGS= 10.0V VGS= 8.0V VGS= 7.0V Ta=25℃ pulsed Fig.3: Typical output characteristics(Ⅱ) DRAIN-SOURCE VOLTAGE: VDS (V) DRAIN CURRENT: ID (A) 0.01 0.1 100 0 1 2 3 4 5 6 7 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.4 Typical Transfer Characteristics GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.5 Gate Threshold Voltage vs. Channel Temperature -50 0 50 100 150 VDS= 10V ID= 1mA CHANNEL TEMPERATURE: Tch (°C) GATE THRESHOLD VOLTAGE: VGS(th) (V) 0.01 0.1 0.001 0.1 10 VGS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.6 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 ID=7.5A ID=15A Ta=25℃ pulsed Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 VGS= 10V Pulsed ID= 7.5A ID= 15A CHANNEL TEMPERATURE: Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.001 0.01 0.1 100 0.001 0.01 0.1 1 10 100 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.9 Forward Transfer Admittance vs. Drain Current DRAIN CURRENT : ID (A) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 3/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6015ANZ 0.01 0.1 100 0 0.5 1 1.5 VGS= 0V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.10 Source Current vs. Sourse-Drain Voltage SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE CURRENT : IS (A) 100 1000 10000 0.01 0.1 1 10 100 1000 Ciss Coss Crss Ta= 25℃ f= 1MHz VGS= 0V Fig.11 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS (V) CAPACITANCE : C (pF) 0 10 20 30 40 50 60 70 Ta= 25℃ VDD= 300V ID= 15A RG= 10Ω Pulsed Fig.12 Dynamic Input Characteristics TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) 100 1000 0.1 1 10 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed Fig.13 Reverse Recovery Time vs.Source Current SOURCE CURRENT : IS (A) REVERSE RECOVERY TIME: trr (ns) 100 1000 10000 0.01 0.1 1 10 100 tr tf td(on) td(off) Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed Fig.14 Switching Characteristics DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) 4/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6015ANZ Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) RG VDS D.U.T. ID RL VDD 5/5 2011.10 - Rev.A
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