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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET R6012FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage V GSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. Application Switching Inner circuit Packaging specifications Package Bulk Code - Basic ordering unit (pieces) 500 R6012FNX Absolute maximum ratings (Ta 25°C) Symbol Limits Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS 30 V Continuous I D 12 A Pulsed I DP 48 A Continuous I S 12 A Pulsed I SP 48 A Avalanche Current I AS 6A Avalanche Energy E AS 9.6 mJ Power dissipation (Tc=25C) P D 50 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25,starting Tch=25°C *3 Limited only by maximum temperature allowed. Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c) 2.5 C / W Type Parameter Source current (Body Diode) Drain current Parameter TO-220FM 4.5 2.8 0.75 φ3.2 (2)( 3) (1) 0.8 2.54 2.62.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 (1) Gate (2) Drain (3) Source 1 BODY DIODE (1) (3)(2) 1/6 2011.08 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6012FNX Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 100 nA V GS=±30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 600 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS - - 100 AV DS=600V, VGS=0V Gate threshold voltage V GS (th) 3- 5 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 3.5 - - S I D=6A, VDS=10V Input capacitance C iss - 1300 - pF V DS=25V Output capacitance C oss - 890 - pF V GS=0V Reverse transfer capacitance C rss - 45 - pF f=1MHz Turn-on delay time t d(on) - 30 - ns I D=6A, VDD 300V Rise time t r - 37 - ns V GS=10V Turn-off delay time t d(off) - 77 - ns R L=50 Fall time t f - 20 - ns R G=10 Total gate charge Q g - 35 - nC I D=12A, Gate-source charge Q gs - 10 - nC V DD 300V Gate-drain charge Q gd - 15 - nC V GS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Symbol Min. Typ. Max. Unit Forward Voltage VSD - - 1.5 V I s=12A, VGS=0V Reverse Recovery Time t rr 45 75 105 ns *Pulsed Parameter Conditions Parameter Static drain-source on-state resistance RDS (on) ID=6A, VGS=10V- 0.39 0.51 Is=12A, di/dt=100A/s Conditions 2/6 2011.08 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6012FNX Electrical characteristic curves (Ta=25C) 0 0.2 0.4 0.6 0.8 1 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=10.0V VGS=6.0V VGS=7.0V VGS=5.0V VGS=5.5V VGS=8.0V VGS=6.5V Ta=25°C Pulsed 0 2 4 6 8 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=6.0V VGS=6.5V VGS=5.0V VGS=5.5V VGS=7.0V VGS=8.0V Ta=25°C Pulsed 0.001 0.01 0.1 100 Drain Currnt : ID [A] Gate-Source Voltage : VGS [V] Fig.3 Typical Transfer Characteristics VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C -50 0 50 100 150 Gate Threshold Voltage : VGS(th) [V] Channel Temperature : Tch [℃] Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 0.1 0.01 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [Ω] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.2 0.4 0.6 0.8 -50 0 50 100 150 Static Drain-Source On-State Resistance : RDS(on) [Ω] Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature VGS=10V pulsed ID=6A ID=12A 3/6 2011.08 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6012FNX 0.001 0.01 0.1 100 0.001 0.01 0.1 1 10 100 Forward Transfer Admittance Yfs [S] Drain Current : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 100 0.0 0.5 1.0 1.5 Source Current : Is [A] Source-Drain Voltage : VSD [V] Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1000 10000 0.01 0.1 1 10 100 Switching Time : t [ns] Drain Current : ID [A] Fig.10 Switching Characteristics td(on) tr td(off) tf VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed 0 5 10 15 20 25 30 35 40 45 50 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.11 Dynamic Input Characteristics Ta=25°C VDD=300V ID=12A Pulsed 100 1000 10000 100000 0.01 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss Coss Crss 0.2 0.4 0.6 0.8 0 2 4 6 8 10 12 14 16 18 20 Static Drain-Source On-State Resistance RDS(on) [Ω] Gate-Source Voltage : VGS [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=12A ID=6A Ta=25°C Pulsed 4/6 2011.08 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6012FNX 100 1000 0 1 10 100 Reverse Recovery Time : trr [ns] Source Current : IS [A] Fig.13 Reverse Recovery Time vs. Source Current Ta=25°C Vgs=0V di/dt=100A/us Pulsed 0.01 0.1 100 0.1 1 10 100 1000 Drain Current : ID [ A ] Drain-Source Voltage : VDS [ V ] Fig.14 Maximum Safe Operating Area Ta=25°C Single Pulse Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs PW = 1ms PW = 10ms 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Single Pulse Rth(ch-a)=53.0°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 5/6 2011.08 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6012FNX Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 6/6 2011.08 - Rev.A
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