R6011KNX ROHM | Alldatasheet
Document overview
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Technical content
Features
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant l l Packaging specifications Type Packing Bulk Reel size (mm) l l Application Tape width (mm) Switching Basic ordering unit (pcs) 500 Taping code Marking R6011 KNX l l Absolute maximum ratings a = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage V DSS 600 V Continuous drain current c = 25°C) I D ±11 A Pulsed drain current I DP ±33 A Gate - Source voltage static V GSS ±20 V AC(f 1Hz) ±30 V Avalanche current, single pulse I AS 1.8 A Avalanche energy, single pulse E AS 210 mJ Power dissipation c = 25°C) P D W Junction temperature T j 150 Operating junction and storage temperature range T stg -55 to + 150 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Thermal resistance Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case R thJC 2.4 Thermal resistance, junction - ambient R thJA Soldering temperature, wavesoldering for 10s T sold 265 l l
Electrical characteristics
a = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain - Source breakdown voltage V (BR)DSS V GS V, I D mA 600 V Zero gate voltage drain current I DSS V DS 600 V, V GS V μ A T j 25°C 100 T j 125°C 1000 Gate - Source leakage current I GSS V GS ±20 V, V DS V ±100 nA Gate threshold voltage V GS(th) V DS V, I D mA V Static drain - source on - state resistance R DS(on) V GS V, I D 3.8 A Ω T j 25°C 0.34 0.39 T j 125°C 0.72 Gate resistance R G f = MHz, open drain 1.5 Ω www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l a = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Transfer Admittance fs V DS V, I D 5.5 A 2.9 5.8 S Input capacitance C iss V GS V 740 pF Output capacitance C oss V DS V 630 Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) V DD 300 V, V GS V ns Rise time t r I D 5.5 A Turn - off delay time t d(off) R L 54.9 Ω Fall time t f R G Ω l l Gate charge characteristics a = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Total gate charge Q g V DD 300 V nC Gate - Source charge Q gs I D A Gate - Drain charge Q gd V GS V Gate plateau voltage V (plateau) V DD 300 V, I D A 6.7 V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10 μ s, Duty cycle ≤ 1% *3 L 100mH, V DD =50V, R G =25 Ω , STARTING T j =25 *4 T C =25 *5 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Body diode (Source-Drain) (T a = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous forward current I S T C A Pulse forward current I SP A Forward voltage V SD V GS V, I S A 1.5 V Reverse recovery time t rr I S A di/dt = 100 μ s 355 ns Reverse recovery charge Q rr 3.8 μ C Peak reverse recovery current I rrm A l l Typical transient thermal characteristics Symbol Value Unit Symbol Value Unit R th1 0.261 K/W C th1 0.00167 Ws/K R th2 0.973 C th2 0.0192 R th3 2.18 C th3 0.460 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig.15 Dynamic Input Characteristics www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Electrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
l l Dimensions www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 20150911 - Rev. 001
Minimum Package Quantity 500 Packing Type Bulk Constitution Materials List inquiry RoHS Yes R6011KNX - Web Page Distribution Inventory