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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET R6008FNJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Fast reverse recovery time (trr) 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage V GSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. Application Inner circuit Switching Packaging specifications Package Taping Code TL Basic ordering unit (pieces) 1000 R6008FNJ Absolute maximum ratings (Ta 25°C) Symbol Limits Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS 30 V Continuous I D 8A Pulsed I DP 32 A Continuous I S 8A Pulsed I SP 32 A Avalanche Current I AS 4A Avalanche Energy E AS 4.3 mJ Power dissipation (Tc=25℃)P D 50 W Channel temperature T ch 150 C Range of storage temperature T stg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25℃ *3 Limited only by maximum temperature allowed. Thermal resistance Symbol Limits Unit Channel to Case R th (ch-c) 2.5 C / W Type Parameter Source current (Body Diode) Drain current Parameter LPTS 10.1 4.5 13.1 9.03.0 0.782.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE (1) (3)(2) 1/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6008FNJ Symbol Min. Typ. Max. Unit Gate-source leakage IGSS -- 100 nA V GS=±30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 600 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS - - 100 AV DS=600V, VGS=0V Gate threshold voltage V GS (th) 2.0 - 4.0 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 2.5 5.0 - S I D=4A, VDS=10V Input capacitance C iss - 580 - pF V DS=25V Output capacitance C oss - 450 - pF V GS=0V Reverse transfer capacitance C rss - 25 - pF f=1MHz Turn-on delay time t d(on) - 20 - ns I D=4A, VDD 300V Rise time t r - 25 - ns V GS=10V Turn-off delay time t d(off) - 60 - ns R L=75 Fall time t f - 30 - ns R G=10 Total gate charge Q g - 20 - nC I D=8A, Gate-source charge Q gs -5 - n C V DD 300V Gate-drain charge Q gd - 10 - nC V GS=10V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Symbol Min. Typ. Max. Unit Forward Voltage VSD - - 1.5 V I s=8A, VGS=0V Reverse Recovery Time t rr -6 7 - n s *Pulsed Electrical characteristics (Ta = 25C) Parameter Conditions Parameter Static drain-source on-state resistance RDS (on) ID=4A, VGS=10V- 0.73 0.95 Is=8A, di/dt=100A/s Conditions 2/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6008FNJ Electrical characteristic curves 0.5 1.5 2.5 -50 0 50 100 150 VGS= 10V Pulsed ID= 4.0A ID= 8.0A -50 0 50 100 150 VDS= 10V ID= 1mA 0.001 0.01 0.1 100 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.4 Typical Transfer Characteristics 0.5 1.5 0 5 10 15 ID= 4.0A ID= 8.0A Ta=25℃ pulsed Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.01 0.1 100 0.01 0.1 1 10 100 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.9 Forward Transfer Admittance vs. Drain Current 0.01 0.1 100 0.1 1 10 100 1000 Ta = 25℃ Single Pulse Pw=10ms PW=100us PW=1ms Operation in this area is limited by RDS(ON) Fig.1 Maximum Safe Operating Area Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE: VDS (V) CHANNEL TEMPERATURE: Tch (℃) GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) CHANNEL TEMPERATURE: Tch (℃) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) DRAIN CURRENT : ID (A) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : ID (A) GATE THRESHOLD VOLTAGE: VGS(th) (V) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 DRAIN CURRENT : ID [A] DRAIN-SOURCE VOLTAGE : VDS [V] Fig.2 Typical Output Characteristics (Ⅰ) Ta=25℃ pulsed VGS=10.0V VGS=6.0V VGS=7.0V VGS=5.0V VGS=4.5V VGS=8.0V VGS=6.5V 0 1 2 3 4 5 6 7 8 9 10 DRAIN CURRENT : ID [A] DRAIN-SOURCE VOLTAGE : VDS [V] Fig.3 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=6.0V VGS=6.5V VGS=7.0V VGS=8.0V VGS=5.0V VGS=4.5V Ta=25℃ pulsed 0.1 0.1 1 10 100 Static Drain-Source On-State Resistance RDS(on) [Ω] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 3/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6008FNJ 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Ta= 25℃ Single Pulse Rth(ch-a) (t) = r(t)×Rth(ch-a) Rth(ch-a) = 49.7℃/W 100 1000 0.1 1 10 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed Fig.13 Reverse Recovery Time vs. Source Current 0.01 0.1 100 0 0.5 1 1.5 2 VGS= 0V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.10 Source Current vs. Sourse-Drain Voltage 0 10 20 30 Ta= 25℃ VDD= 300V ID= 8.0A RG= 10Ω Pulsed Fig.12 Dynamic Input Characteristics 100 1000 10000 0.01 0.1 1 10 100 1000 Ciss Coss Crss Ta= 25℃ f= 1MHz VGS= 0V Fig.11 Typical Capacitance vs. Drain-Source Voltage 100 1000 10000 0.1 1 10 100 Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed tr td(on) td(off) tf Fig.14 Switching Characteristics Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS (V) SOURCE-DRAIN VOLTAGE : VSD (V) REVERSE DRAIN CURRENT : IS (A) DRAIN CURRENT : ID (A) PULSE WIDTH : Pw(s) NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) SOURCE CURRENT : IS (A) CAPACITANCE : C (pF) REVERSE RECOVERY TIME: trr (ns) SWITCHING TIME : t (ns) 4/5 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet R6008FNJ Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90 % 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 5/5 2011.10 - Rev.A
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