R5660Z NISSHINBO | Alldatasheet

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1-Cell Li-ion Battery Protection IC with High-accuracy Overcharge Protection No.EA-611-241205 The R5660Z is a one-cell Li-ion / polymer battery protection IC provides overcharge, overdischarge, and discharge / charge overcurrent detections. One of the features of this device is a high-accuracy detection at overcharge and overcurrent. The supply current after overdischarge detection can be reduced to a minimum by stopping the internal circuits. The small WLCSP package is available.

  • Lower-resistance of Sense Resistor by Overcurrent Detector with Lower -voltage and High- accuracy: Achieving heat reduction on board
  • Low Consumption Current and Low Standby Current: Achieving longer driving time with a battery of small capacity
  • Supply Current Normal Mode: Typ. 2.5 µA / Max. 6.0 µA Standby Mode: Max.0.04 µA
  • Detector Selectable Range and Accuracy (Unless otherwise provided, Ta=25°C) Overcharge detection voltage (VDET1): 4.19 V to 4.6 V, ±10 mV, Overdischarge detection voltage (VDET2): 2.0 V to 3.4 V, ±2.0% Discharge overcurrent detection voltage (VDET3):0.015 to 0.150V, 0.015 to 0.030V: ±3mV/ 0.050 to 0.150V: ±5mV Charge overcurrent detection voltage (VDET4): Short-circuit detection voltage (VSHORT): 0.040 to 0.300V, ±5mV
  • Internal Fixed Output Delay Time Overcharge Detection Delay Time (tVDET1): 1.0 s Overdischarge Detection Delay Time (tVDET2): 16 / 32 / 128 ms Discharge Overcurrent Detection Delay Time (tVDET3): 8 /16 / 32 / 128 / 512 ms Short-circuit Detection Delay Time (tSHORT): 280 µs Charge Overcurrent Detection Delay Time (tVDET4): 8 ms
  • 0 V Battery Charging: Permission
  • Discharge Overcurrent Release Voltage Type selectable: Auto Release / Latch VDD COUT DOUT VSS R5660Z RVDD 330ꭥ CVDD 0.1µF RV- 1kꭥ RSENS RSE NS WLCSP-6-P7 1.25 mm x 0.84 mm x 0.36 mm
  • Li+ / Li- Polymer protector of Overcharge, Overdischarge, and Overcurrent for Battery pack
  • High precision protectors for smart-phones and any other electronic gadgets using on-board Li+ / Li- Polymer battery KEY SPECIFICATIONS TYPICAL APPLICATION CIRCUIT

APPLICATIONS

No.EA-611-241205 SELECTION GUIDE Set Voltages, Delay Times, and Optional Functions are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5660Zxxx$∗-E2-F/T WLCSP-6-P7 5,000 pcs Yes Yes xxx: Specify a code combined the following set voltages. Refer to “Product Code List” for details. Overcharge detection voltage (VDET1): 4.19 V to 4.6 V in 5 mV step Overdischarge detection voltage (VDET2): 2.0 V to 3.4 V in 50 mV step Discharge overcurrent detection voltage2(VDET3): 0.015 V to 0.150 V, 0.015 V to 0.050 V: in 1 mV step / 0.050 V to 0.150 V: in 5 mV step Charge overcurrent detection voltage (VDET4): −0.075 V to −0.015 V, −0.030 V to −0.015 V: in 1 mV step / −0.075 V to −0.030 V: in 5 mV step Short-circuit detection voltage (VSHORT): 0.040 V to 0.300 V in 5 mV step $: Specify a delay time version from the table below. Ver. tVDET1 [s] tVDET2 [ms] tVDET3 [ms] tVDET4 [ms] tVR1 [ms] tVR2/3 [ms] tVR4 [ms] tSHORT [ms] A 1.0 128 512 8 16 1.1 1.1 0.28 C 1.0 32 16 8 16 1.1 1.1 0.28 J 1.0 128 128 8 16 1.1 1.1 0.28 ∗: Specify a version combined following functions from the table below. Ver. Overcharge Release Overdischarge Release Discharge Overcurrent Release 0V Battery Charging Charge Overcurrent Detection A Latch Latch Auto Release Permission Enable C Latch Latch Latch Permission Enable The tail-end of the product name provides an identifier for back-end semiconductor companies as follows: F: LAPIS, T: OUME

No.EA-611-241205 Product Code Table The product code is determined by a combination of set voltage (overcharge detection voltage: VDET1, overdischarge detection voltage: VDET2, discharge / charge overcurrent detection voltage: VDET3 / VDET4, short- circuit protection voltage: VSHORT), delay time (overcharge / overdischarge detection delay time: tVDET1 / tVDET2, discharge / charge overcurrent detection delay time: tVDET3 / tVDET4, short-circuit protection delay time: tSHORT) and optional function. Product Code Set Voltage [V] Delay Time [ms] Optional Function VDET1 VDET2 VDET3 VDET4 VSHORT tVDET1 tVDET2 tVDET3 tVDET4 tSHORT Discharge Overcurrent Release Battery Charging R5660Z210CA R5660Z229AA

No.EA-611-241205 Block Diagram Detector Short Delay Overcharge Overdischarge Charge overcurrent Discharge overcurrent DOUT COUT Oscillator Level Shift Counter Logic Circuit Logic Circuit VDD VSS DS Circuit RSENS R5660Z Block Diagram PIN DESCRIPTION <Top View> <Bottom View> R5660Z (WLCSP-6-P7) Pin Configuration R5660Z Pin Description Pin No. Symbol Pin Description A1 V- Charger negative input pin B1 VDD Power supply pin, Substrate level in IC C1 VSS Ground pin A2 COUT Overcharge detection pin, CMOS output B2 RSENS Overcurrent detection input pin C2 DOUT Overdischarge detection pin, CMOS output

No.EA-611-241205 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings (Ta = 25°C, VSS = 0 V) Symbol Parameter Rating Unit VDD Supply Voltage −0.3 to 12 V RSENSE V- Pin Voltage RSENSE Pin Voltage VDD − 30 to VDD + 0.3 VDD − 30 to VDD + 0.3 V V VCOUT VDOUT COUT Pin Voltage DOUT Pin Voltage VDD − 30 to VDD + 0.3 VSS − 0.3 to VDD + 0.3 V V PD Power Dissipation Refer to Appendix “Power Dissipation”. Tj Junction Temperature Range −40 to 125 °C Tstg Storage Temperature Range −55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Parameter Rating Unit VDD1 Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

No.EA-611-241205

ELECTRICAL CHARACTERISTICS

R5660Zxxxxx Electrical Characteristics ( Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDD1 Operating Input Voltage VDD - VSS 1.5 5.0 V A VST Minimum Operating Voltage at 0 V Charging Voltage Defined as VDD-V-, VDD-VSS = 0 V 1.8 V A VDET1 Overcharge Detection Voltage R1 = 330 Ω, VDET1 −0.010 VDET1 VDET1 +0.010 V B tVDET1 Overcharge Detection tVREL1 Overcharge Release Delay Time VDD = 4 V, V- = 0 V → 1 V 12.0 16.0 20.0 ms C VDET2 Overdischarge Detection Voltage Detect falling edge of supply voltage VDET2 ×0.98 VDET2 VDET2 ×1.02 V D tVDET2 Overdischarge Detection Delay Time VDD = 3.6 V → 2.0 V tVDET2 ×0.80 tVDET2 tVDET2 ×1.20 ms D tVREL2 Overdischarge Release VDET3 Discharge Overcurrent Detection Voltage Detect rising edge of RSENSE pin voltage 0.015 V to 0.030 V VDET3 −0.003 VDET3 VDET3 +0.003 V F 0.031 V to 0.050 V VDET3 ×0.900 VDET3 ×1.100 V F 0.051 V to 0.150 V VDET3 −0.005 VDET3 +0.005 V F VLDDET Load Detection Voltage VDD = 3.6 V, Voltage defined as V- − VSS 0.050 0.200 0.350 V F tVDET3 Discharge Overcurrent Detection Delay Time VDD = 3.6V, V- = 0 V, VRSENS = 0 V → VDET3 + 0.010 tVDET3 ×0.80 tVDET3 tVDET3 ×1.20 ms F tVREL3 Discharge Overcurrent Release Delay Time VDD = 3.6 V, VRSENS = V- = 3 V → 0 V 0.85 1.10 1.35 ms F VSHORT Short Protection Voltage Detect rising edge of RSENS pin voltage VSHORT −0.005 VSHORT VSHORT +0.005 V F tSHORT Short Protection Delay Time VDD = 3.6 V, V- = 0 V, VRSENS=0V → VSHORT+0.010 210 280 350 µs F RSHORT Reset Resistance for Discharge Overcurrent Protection (3) VDD = 3.6 V, V- = 1.0 V, VRSENS = V- = 0 V 20 45 70 kΩ F (1) Refer to Test Circuit diagrams. (2 ) This temperature characteristic can be corrected by laser -trimming with consideration given to variation in process parameters. However, this specification is guaranteed by design, not mass production tested. (3) Appropriate products except for R5660ZxxxxC.

No.EA-611-241205 R5660Zxxxxx Electrical Characteristics (Continued) (Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Test Circuit(1) VDET4 Charge Overcurrent Detection Voltage Detect falling edge of RSENS pin voltage VDET4 −0.004 VDET4 VDET4 +0.004 V F tVDET4 Charge Overcurrent Detection Delay Time VDD = 3.6 V, V- = 0 V, VRSENS = 0 V →−1 V 6 8 10 ms F tVREL4 Charge Overcurrent Release Delay Time VDD = 3.6 V, VRSENS = V- = −1 V → 1 V 0.85 1.10 1.35 ms F VDS Delay Time Shortening Mode Voltage VDD = 3.6 V −2.6 −2.0 −1.4 V G VOL1 Nch ON-Voltage of COUT IOL = 50 µA, VDD = 4.55 V 0.4 0.5 V H VOH1 Pch ON-Voltage of COUT IOH = −50 µA, VDD = 3.9 V 3.4 3.7 V I VOL2 Nch ON-Voltage of DOUT IOL = 50 µA, VDD = 2.0 V 0.2 0.5 V J VOH2 Pch ON-Voltage of DOUT IOH = −50 µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply Current VDD = 3.9 V, V- = VRSENS = 0 V 2.5 6.0 µA L ISTANDBY Standby Current VDD = 1.9 V 0.04 µA L (1) Refer to Test Circuit diagrams.

No.EA-611-241205 Test Circuits A B C D E F G H I J K L OSCILLOSCOPE VDD DOUT COUT VSS V V RSENS V VDD VSS COUT RSENS VDD VSS COUT RSENS V VDD VSS DOUT RSENS VDD VSS DOUT RSENS V A VDD VSS DOUT RSENS V VDD VSS COUT RSENS V A VDD VSS COUT RSENS V A VDD VSS COUT RSENS V A VDD VSS DOUT RSENS V A VDD VSS DOUT RSENS A VDD VSS RSENS

No.EA-611-241205 THEORY OF OPERATION Overcharge Protection (VDET1) When the overcharge detection delay time (t VDET1) passes under the condition that the VDD pin voltage (V DD) exceeds the overcharge detection voltage (VDET1), this IC enters the overcharge state. In this state, the COUT pin becomes Low, and the charge control FET is turned off to stop charging. The COUT pin, which is a CMOS output type, outputs a voltage between VDD and V-. The discharge current flows via the parasitic diode even when the charge control FET is off, and the V - pin voltage (V-) increases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (V SS). A release from the overcharge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Latch V- > VLDDET and VDD < VDET1 tVREL1 Overdischarge Protection (VDET2) When the overdischarge detection delay time (t VDET2) passes under the condition that the VDD pin voltage (VDD) falls below the overdischarge detection voltage (VDET2), this IC enters the overdischarge state. In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to stop discharging. The charge current flows via the parasitic diode even when the discharge control FET is off, and the V - pin voltage (V-) decreases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (V SS). In addition, when V- is pulled up to VDD level and exceeds the V- pull-up detection voltage for standby (VRCDET), the IC enters the standby state. It results in reducing the standby consumption current (ISTANDBY) to a minimum. A release from the overdischarge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Latch V- < VCHGDET and VDD > VDET2 tVREL2 VCHDET: charge detection voltage for standby release

No.EA-611-241205 Discharge Overcurrent Protection (VDET3) In order to monitor a discharge current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the discharge overcurrent detection delay time (t VDET3) passes under the condition that the discharge current, which is converted through RSENS for current -to-voltage conversion, exceeds V DET3, this IC enters the discharge overcurrent state. In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to shut off the discharge current. A release from the discharge overcurrent state meets the following pin conditions and the delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- < VLDDET tVREL3 V- is pulled down to the VSS level inside the IC. Note1 Latch V- < VLDDET tVREL3 V- is pulled up to the VDD level inside the IC. Note2 Note1: It is possible to release the abnormal condition of the load connected to the battery pack. When the discharge overcurrent release delay time (tVREL3) passes under the condition V- falls below VREL3, this IC releases from the discharge overcurrent state. V- can be expressed by the following equation. V- = VCELL × RSHORT / (RSHORT + RV- + RLOAD) VCELL : Battery voltage RSHORT : Discharge overcurrent release resistance RV- : External resistor resistance for V- pin RLOAD : Load resistance to a battery pack Note2: When connecting a charger to pull V- down, this IC releases from the discharge overcurrent state. Short-circuit Current Protection In order to monitor a short -circuit current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the short -circuit current, which is converted through RSENS for current -to-voltage conversion, exceeds the short -circuit detection voltage (VSHORT), this IC enters the short-circuit state. However, it is possible for this IC to avoid its state when the short-circuit current falls below VSHORT within the short-circuit detection delay time (tSHORT). In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to shut off the short - circuit current. A release from the short-circuit state must meet the same condition and delay time as the discharge overcurrent protection.

No.EA-611-241205 Charge Overcurrent Protection (VDET4) In order to monitor a charge current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the charge overcurrent detection delay time (t VDET4) passes under the condition that the charge current, which is converted through RSENS for current-to-voltage conversion, falls below the charge overcurrent detection voltage (V DET4), this IC enters the charge overcurrent state. In this state, the COUT pin becomes Low, and the charge control FET is turned off to shut off the charge current. A release from the charge overcurrent state must meet the following pin condition and delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- > VLDDET tVREL4 V- is pulled up to the VDD level inside the IC. Note Note: By disconnecting the charger, this IC releases from the charge overcurrent state. Delay Shortening (DS) Function Output delay times of overcharge and overdischarge can be shorter than those setting values by forcing equal or lower than the delay time shortening mode voltage (VDS) to V- pin.

0 V Battery Charging

0 V Battery Charge Function "Permission"

This function allows to charge to the 0 V battery by connecting the charger with the minimum charging voltage STCHG) and more.

No.EA-611-241205 State Transition Diagram Unless otherwise provided, voltage notation is the voltage with respect to VSS. *Note1 RCDET: Reverse charging protection state This function is not guaranteed because voltage above the absolute maximum rating may apply to IC. *Note2 VLDDET: Load detection voltage *Note3 V CHGDET: Charge detection voltage for standby release *Note4 Auto release type: Pulled down to VSS Latch type: Pulled up to VDD

No.EA-611-241205 Timing Diagrams Charge/Discharge Current VDET1 VDD VDET3 VSS VDET4 VDD VLDDET VSS VDET4 VDD COUT RSENS VDD Time Time Time Time Time Load Charger Disconnect Connect Connect Disconnect Connect DisconnectDisconnect Connect tVDET1 tVDET1 tVREL1tVREL1 tVREL4 tVDET4 Charge Discharge State (1)(0) (0) Normal State (1) VDET1 State (2) VD ET2 State (3) VDET3 State (4) VDET4 State Refer to S tates Di agram for detail s. (0) (0) (4) (0) (1) Overcharge Timing Diagram

No.EA-611-241205 Load Charger Connect Disconnect Connect DisconnectDisconnect Connect Charge/Discharge Current DOUT RSENS VDD Time Time Time Time Time VDET2 VDD VDET3 VSS VSHORT VDD VLDDET VSS VSHORT VDD VSS R5660 State Disconnect Charge Discharge tVDET2 tVREL2 tVDET2 tVREL2 tVDET3 tSHORT tVREL3tVREL3 Connect ConnectDisconnect Disconnect (0)(3) (4)(3) (0) Normal State (1) VDET1 State (2) VD ET2 State (3) VDET3 State (4) VDET4 State Refer to S tates Di agram for detail s. Overdischarge/ Discharge Overcurrent (1) / Short Circuit Timing Diagrams (1) Auto release type only

No.EA-611-241205

APPLICATION INFORMATION

Typical Application Circuit VDD COUT DOUT VSS RV- 1kΩ R5660Z RVDD 330Ω CVDD 0.1µF RSENS RSENS R5660Z Typical Application Circuit External Components Symbol Typ. Range Unit Resistor RVDD (1) 330 330 to 1000 Ω RV- (1) 1.0 1.0 to 10.0 kΩ RSENS 2.0 mΩ Capacitor CVDD 0.1 0.01 to 1.00 µF Technical Notes on External Components

  • The voltage fluctuation is stabilized with RVDD and CVDD. If RVDD is too large, the detection voltage rises by the conduction current at detection. To stabilize the operation, it is recommended to use a resistor of 1kΩ or less for RVDD and a capacitor of 0.01 µF to 1.0 µF for CVDD.
  • R VDD and RV- serve as a current limit resistor when the battery pack is charged with reversed polarity, or a voltage of the connected charger is more than the absolute maximum rating. When using a small resistor for RVDD and RV-, the device’s power dissipation might be exceeded. Therefore, a total of R VDD and RV- must be 1k Ω or more. When using a large resistor for R V-, the charger might not be released by re- connecting to the battery pack after the overdischarge detection. Therefore, R V- must be 10kΩ or less. Production variation and temperature properties are included in the value. (1) A total of RVDD and RV- must be 1kΩ or more.

No.EA-611-241205

  • R SENS is a resistor for sensing an overcurrent. If the resistance value is too large, power loss becomes also large. By the overcurrent, if the R SENS is not appropriate, the power loss may be beyond the power dissipation of RSENS. Choose an appropriate RSENS according to the cell specification.
  • The typical application circuit diagram is just an example. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
  • In case of a short circuit in the positive and the negative terminals of the battery pack, even though the IC provides the short -circuit protection, a large current may flow through the FET during the short circuit detection delay time. Therefore, it is necessary to select a suitable FET with a sufficiently large current capacity to withstand a large current. TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.
  • Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X -ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X-ray irradiation does not exceed 1.5Gy (absorbed dose for air).

POWER DISSIPATION WLCSP-6-P7 Ver. B i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 101.5 mm x 114.5 mm x 1.6 mm Copper Ratio Outer Layer (First Layer): 10% Inner Layers (Second and Third Layers): 99.5 x 99.5mm 100% Outer Layer (Fourth Layer): 10% Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 540 mW Thermal Resistance (ja) ja = 183 °C/W ja: Junction-to-Ambient Thermal Resistance Power Dissipation vs. Ambient Temperature Measurement Board Pattern 100 200 300 400 500 600 0 25 50 75 100 125 Power Dissipation (mW) Ambient Temperature (°C) 540

PACKAGE DIMENSIONS WLCSP-6-P7 Ver. B i

Ver. D i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5660Z (WLCSP-6-P7) Part Marking NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor before attempting to use AOI. R5660Z2xxxx Part Marking List R5660Z7xxxx Part Marking List Product Name  Product Name  R5660Z210CA UA R5660Z710CA U Y R5660Z215CA UC R5660Z729AA U V R5660Z216JA UE R5660Z730AA UX R5660Z218AA UF R5660Z219AA UG R5660Z220AA UH R5660Z222CA UJ R5660Z223AA UK R5660Z224AA UL R5660Z225AA UN R5660Z226AA UP R5660Z227CA UR R5660Z228AA UT R5660Z229AA UU

Visual Inspection Criteria WLCSP VI-160823 i No. Inspection Items Inspection Criteria Figure 1 Package chipping A≥0.2mm is rejected B≥0.2mm is rejected C≥0.2mm is rejected And, Package chipping to Si surface and to bump is rejected. 2 Si surface chipping A≥0.2mm is rejected B≥0.2mm is rejected C≥0.2mm is rejected But, even if A≥0.2mm, B≤0.1mm is acceptable. 3 No bump No bump is rejected.

4 Marking miss To reject incorrect marking, such as

another product name marking or another lot No. marking. 5 No marking To reject no marking on the package.

6 Reverse direction of

To reject reverse direction of marking character.

7 Defective marking

To reject unreadable marking. (Microscope: X15/ White LED/ Viewed from vertical direction)

8 Scratch To reject unreadable marking

character by scratch. (Microscope: X15/ White LED/ Viewed from vertical direction)

9 Stain and Foreign

To reject unreadable marking character by stain and foreign material. (Microscope: X15/ White LED/ Viewed from vertical direction)

  1. T he products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
  • Aerospace Equipment
  • Equipment Used in the Deep Sea
  • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
  • Life Maintenance Medical Equipment
  • Fire Alarms / Intruder Detectors
  • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti-radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/