R5619L NISSHINBO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 24

Technical content

One-cell Li-ion Battery Protection IC with High-accuracy Overcurrent Detection No.DS-R5619L-E-260529 The R5619L is a one-cell Li- ion / polymer battery protection IC providing overcharge, overdischarge and charge / discharge overcurrent detections. Major features of this device include charge / discharge overcurrent detectors with high accuracy of ±1.00 mV.

  • Lower-resistance of sense resistor by overcurrent detector with lower-voltage and high-accuracy: Achieving heat reduction on board
  • Low consumption current and low standby current: achieving longer driving time with a battery of small capacity
  • Supply Current: Normal mode: Typ. 2 µA / Max. 4 µA Standby mode: Max.0.2 µA (VDET2: Auto Release type) / Max.0.04 µA (VDET2: Latch type)
  • Detector Selectable Range and Accuracy Overcharge detection voltage (VDET1): 4.2 V to 4.7 V, ±10 mV Overdischarge detection voltage (VDET2): 2.0 V to 3.2 V, ±35 mV Discharge overcurrent detection voltage1 (VDET31): 0.0030 V to 0.0340 V, ±1 mV Discharge overcurrent detection voltage2 (VDET32): 0.010 V to 0.100 V, ±2 mV Charge overcurrent detection voltage (VDET4): –0.0030 V to –0.0300 V, ±1 mV Short-circuit detection voltage (VSHORT1): 0.020 V to 0.150 V, ±4 mV
  • 0 V Battery Charging selectable: Permission / Inhibition 0 V charging inhibition voltage: 1.000 V to 2.200 V
  • Overcharge / Overdischarge Release Voltage Type selectable: Auto Release / Latch Discharge Overcurrent Release Voltage Type selectable: Auto Release1(V- = VDD × 0.8V) / Latch
  • Discharge Overcurrent Detection2 (VDET32) selectable: Enable / Disable DFN1814-6B 1.4 x 1.8 x 0.4 [mm]
  • Smart Phone, Tablet PC
  • Game, Hearing Aid OVERVIEW KEY BENEFITS

APPLICATIONS

TYPICAL APPLICATION CIRCUIT KEY SPECIFICATIONS PACKAGE VDD COUT DOUT VSS RSENS Pack plus Pack minus RV- 1kΩ RSENS 1.25mΩ RVDD 330Ω CVDD 0.1μF R5619L

No.DS-R5619L-E-260529 SELECTION GUIDE Set Voltage, Delay Time and Optional Function are user selectable. Refer to Product Code List for major lineup. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5619Lxxx$-TR DFN1814-6B 5,000 pcs Yes Yes xxx: Specify a code that combines the following set voltages. Refer to Set Voltage Code in Product Code List for major codes. (VDET1 – VREL1 = 0.400 V Max.) (VREL2 – VDET2 = 0.700 V Max.) Discharge Overcurrent Detection Voltage 1 (VDET31) (1) ···· 0.0030 V to 0.0340 V in 0.5 mV step Discharge Overcurrent Detection Voltage 2 (VDET32) (1) ···· 0.010 V to 0.100 V in 0.5 mV step Short-circuit Detection Voltage (VSHORT1) (1) ··················· 0.020 V to 0.150 V in 1 mV step Charge Overcurrent Detection Voltage (VDET4) ··············· –0.0030 V to –0.0300 V in 0.5mV step 0 V Battery Charging Inhibition Voltage (VNOCHG) ············ 1.000 V to 2.200V in 0.1 V step (1) When selecting each set voltage of VDET31, VDET32 and VSHORT1, keep from overlapping among them in consideration of their voltage accuracy. Especially, it is required that VSHORT1 be 7.5 mV higher than VDET31 and VDET32.

No.DS-R5619L-E-260529 $: Specify a code that combines the following delay times. Refer to Set Delay Time Code Table for details. Set Delay Time Code Table (Code Option (1)) Code Delay Time [ms] tVDET1 tVREL1 tVDET2 tVREL2 tVDET31 tVDET32 tVREL3 tVDET4 tVREL4 tSHORT G 1024 17 32 1.05 3584 16 8.5 16.25 4 0.28 M 1024 17 128 1.05 1024 - 8.5 8.25 4 0.28 R 1024 17 128 1.05 2048 16 8.5 8.25 4 0.28 S 1024 17 128 1.05 3584 32 8.5 32.25 4 0.53 Y (2) 1024 17 96 1.05 640 - 8.5 8.25 4 0.28 *: Specify a code that combines the following functions. Refer to Function Code Table for details. Function Code Table Code Release Condition Discharge Overcurrent Detection2 (VDET32)

0 V Battery

Charging Overcharge Overdischarge Discharge Overcurrent A Auto Release Auto Release Auto Release1 Available Permission B Auto Release Auto Release Auto Release1 Disable Permission C Auto Release Auto Release Auto Release1 Disable Inhibition E Latch Latch Latch Available Inhibition F Auto Release Auto Release Auto Release1 Available Inhibition G (3) Latch Latch Auto Release1 Disable Permission H (3) Latch Latch Auto Release1 Disable Inhibition J Latch Latch Auto Release1 Available Inhibition K Latch Latch Latch Disable Inhibition (1) For more information on other code options, please contact our company's sales department. (2) When selecting a delay time code of P/Q/T/U/V/W/Y, a combination with a function code is limited the following codes: VC, WC, YG, YH, PJ, QK, TH, and UH. (3) When selecting a function code of G/H, a combination with a delay time code is limited the following codes: YG, TH, UH, and YH.

No.DS-R5619L-E-260529 Product Code Table Product Name (Set Voltage Code (1)) Set Voltage [V] VDET1 VREL1 VDET2 VREL2 VDET31 VDET32 VSHORT1 VDET4 VNOCHG (1) Indicated with the numbers in bold type.

No.DS-R5619L-E-260529 Product Code Table (Continued) Product Name (Set Voltage Code (1)) Set Voltage [V] VDET1 VREL1 VDET2 VREL2 VDET31 VDET32 VSHORT1 VDET4 VNOCHG Please contact our sales representatives if required a product code other than the above combinations. (1) Indicated with the numbers in bold type.

No.DS-R5619L-E-260529 BLOCK DIAGRAM R5619L Block Diagram

No.DS-R5619L-E-260529 PIN DESCRIPTION Top View Bottom View R5619L (DFN1814-6B) Pin Configuration R5619L Pin Description Pin No Symbol Pin Description

1 V- Charge negative input pin

2 COUT Charge detection output pin, CMOS output

3 DOUT Discharge detection output pin, CMOS output

4 VSS Ground pin for the IC

5 VDD Power supply pin, the substrate level of the IC

6 RSENS Overcurrent detection input pin

No.DS-R5619L-E-260529 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, VSS = 0V) Symbol Parameter Rating Unit VDD Supply voltage –0.3 to 12 V V- V- pin input voltage VDD – 30 to VDD + 0.3 V VRSENS RSENS pin input voltage VSS – 0.3 to VDD + 0.3 V VCOUT COUT pin output voltage VDD – 30 to VDD + 0.3 V VDOUT DOUT pin output voltage VSS – 0.3 to VDD + 0.3 V PD Power Dissipation 150 mW Tj Junction Temperature Range –40 to 125 C Tstg Storage Temperature Range –55 to 125 C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operations at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITION Symbol Parameter Rating Unit VDD Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range –40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed and the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

No.DS-R5619L-E-260529

ELECTRICAL CHARACTERISTICS

R5619Lxxxxx Electrical Characteristics (Ta = 25C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VSTCHG Minimum charging voltage for 0 V battery charger (2) VDD – V-, VDD – VSS = 0 V

1.8 V A

VNOCHG 0 V-battery Charging Inhibition Voltage (3) VDD – VSS, VDD – V- =4 V VNOCHG – 0.1 VNOCHG VNOCHG + 0.1 V A VDET1 Overcharge detection voltage R1 = 330Ω VDET1 – 0.010 VDET1 VDET1 + 0.010 V B VREL1 Overcharge release voltage R1 = 330Ω VREL1 – 0.030 VREL1 VREL1 + 0.030 V B tVDET1 Overcharge detection delay time VDD = 3.6 V → VDET1 + 0.1 V tVDET1 × 0.80 tVDET1 tVDET1 × 1.20 s C tVREL1 Overcharge release delay time VDD = 4.8 V → VREL1 – 0.1 V, V- = 0 V to 1 V (Latch type only) tVREL1 = 1.5 ms 0.7 1.5 2.5 ms C tVREL1 = 17 ms 13.6 17 20.4 VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 – 0.035 VDET2 VDET2 + 0.035 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 – 0.070 VREL2 VREL2 + 0.070 V E tVDET2 Overdischarge detection delay time VDD = VDET2 + 0.15 V → VDET2 – 0.1 V tVDET2 × 0.80 tVDET2 tVDET2 × 1.20 ms D tVREL2 Overdischarge release delay time VDD = VDET2 – 0.2 V → VREL2 + 0.25 V 0.80 1.05 1.26 ms E VCHGDET Charger connection detection voltage VDD = VDET2 + 0.020 V, VRSENS = 0 V 0.500 0.800 1.100 V A VDET31 Discharge overcurrent detection voltage 1 VDD = 3.6 V, V- = VRSENS VDET31 – 0.001 VDET31 VDET31 + 0.001 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6 V, VRSENS = 0V → VDET31 + 0.005V V- = VRSENS tVDET31 × 0.80 tVDET31 tVDET31 × 1.20 ms F VDET32 Discharge overcurrent detection voltage 2 VDD = 3.6 V, V- = VRSENS VDET32 – 0.002 VDET32 VDET32 + 0.002 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6 V, VRSENS = 0 V → VDET32 + 0.005 V V- = VRSENS tVDET32 × 0.80 tVDET32 tVDET32 × 1.20 ms F (1) Refer to TEST CIRCUITS for detail information. (2) 0 V battery charging permission supported product only. (3) 0 V battery charging inhibition supported product only.

No.DS-R5619L-E-260529 R5619Lxxxxx Electrical Characteristics (Continued) (Ta = 25 C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VSHORT1 Short detection voltage1 Detect rising edge of RSENS pin voltage, VDD = 3.6 V, VRSENS = V- VSHORT1 – 0.004 VSHORT1 VSHORT1 + 0.004 V F tSHORT Short detection delay time (2) VDD = 3.6 V, V- = VRSENS, VRSENS = 0V → 1 V 210 280 384 µs F 371 530 689 VSHORT2 Short detection voltage2 Detect rising edge of V- pin voltage, VDD = 3.6V, VRSENS = 0V VDD×0.850 – 0.050 VDD ×0.850 VDD×0.850 + 0.050 V F VREL3 Discharge overcurrent release voltage VDD = 3.6 V, VRSENS = 0 V Auto Release1 VDD×0.800 – 0.050 VDD × 0.800 VDD×0.800 + 0.050 V F Latch VDD×0.780 – 0.100 VDD × 0.780 VDD×0.780 + 0.100 RSHORT Discharge overcurrent release resistance Auto Release1: VDD = 3.6 V, V- = 2.93V 5 10.0 15 k F tVREL3 Discharge overcurrent release delay time VDD = 3.6 V, V- = 3.6 V → 0 V VRSENS = 0 V 6.8 8.5 10.2 ms F VDET4 Charge overcurrent detection voltage VDD = 3.6 V, V- = VRSENS VDET4 – 0.001 VDET4 VDET4 + 0.001 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6V, VRSENS = 0V → –0.5V, V- = VRSENS tVDET4 × 0.80 tVDET4 tVDET4 × 1.20 ms G VREL4 Charge overcurrent release voltage VDD = 3.6 V, VRSENS = 0 V 0.010 0.100 0.250 V G tVREL4 Charge overcurrent release delay time V- = VRSENS 3.2 4 4.8 ms G VOL1 COUT pin NMOS ON voltage IOL = 50 µA, VDD = 4.80 V 0.4 0.5 V H VOH1 COUT pin PMOS ON voltage IOH = -50 µA, VDD = 3.9 V 3.4 3.7 V I VOL2 DOUT pin NMOS ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 DOUT pin PMOS ON voltage IOH = -50µA, VDD = 3.9V 3.4 3.7 V K IDD Supply current VDD = 3.9 V, V- = 0 V 2.0 4.0 µA L ISTANDBY Standby current VDD=1.9V VDET2: Auto Release 0.2 µA L VDET2: Latch 0.04 (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time 1 is the same value as tVREL3.

No.DS-R5619L-E-260529 Test Circuits C VDD VSS COUT RSENS D V VDD VSS DOUT RSENS E VDD VSS DOUT RSENS F V A VDD VSS DOUT RSENS H V A VDD VSS COUT RSENS I V A VDD VSS COUT RSENS J V A VDD VSS DOUT RSENS K V A VDD VSS DOUT RSENS L A VDD VSS RSENS G V VDD VSS COUT RSENS V V OSCILLOSCOPE VDD DOUT COUT VSS RSENS A B V VDD VSS COUT RSENS

No.DS-R5619L-E-260529 THEORY OF OPERATION Overcharge Protection When the overcharge detection delay time (tVDET1) passes under the condition that the VDD pin voltage (VDD) exceeds the overcharge detection voltage (VDET1), this IC enters the overcharge state. In this state, the COUT pin becomes Low, and the charge control FET is turned off to stop charging. The V- pin voltage (V-) increases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (V SS) because the discharge current flows via the parasitic diode even when the charge control FET is off. A release from the overcharge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Auto Release V- < VREL4 and VDD < VREL1 or V- > VREL4 and VDD < VDET1 tVREL1 Latch V- > VREL4 and VDD < VDET1 tVREL1 Overdischarge Protection When the overdischarge detection delay time (t VDET2) passes under the condition that the VDD pin voltage (VDD) falls below the overdischarge detection voltage (VDET2), this IC enters the overdischarge state. In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to stop discharging. The V- pin voltage (V-) decreases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (VSS) because the charge current flows via the parasitic diode even when the discharge control FET is off. In addition, when V- is pulled up to VDD level and exceeds the charger detection voltage (VCHGDET), the IC enters the standby state. It results in reducing the standby current (ISTANDBY) to a minimum. A release from the overdischarge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Auto Release V- > VCHGDET and VDD > VREL2 or V- < VCHGDET and VDD > VDET2 tVREL2 Latch V- < VCHGDET and VDD > VDET2 tVREL2

No.DS-R5619L-E-260529 Discharge Overcurrent Protection To monitor a discharge current, this IC measures a voltage difference of the sense resistor (RSENS) connected between the RSENS and the VSS pins to detect the current value. This IC has two levels of the discharge overcurrent detection voltage 1/2 (VDET31 / VDET32). When the discharge overcurrent detection delay time (t VDET31) passes under the condition that the discharge current , which is converted through R SENS for current -to-voltage conversion , exceeds V DET31, this IC enters the discharge overcurrent state. In a case where VDET32 is enabled, this IC enters the discharge overcurrent state when the discharge overcurrent detection delay time (tVDET32) passes under the condition exceeding VDET32. In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to shut off the discharge current. A release from the discharge overcurrent state must meet the following pin condition and delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- < VREL3 tVREL3 V- is pulled down to the VSS level inside the IC. Note1 Latch V- < VREL3 tVREL3 V- is pulled up to the VDD level inside the IC. Note2 Note1: It is possible to release the abnormal condition of the load connected to the battery pack. When the discharge overcurrent release delay time (tVREL3) passes under the condition V- falls below VREL3, this IC releases from the discharge overcurrent state. V- can be expressed by the following equation. V- = VCELL × RSHORT / (RSHORT + RV- + RLOAD) VCELL : Battery voltage RSHORT : Discharge overcurrent release resistance RV- : External resistor for V- pin RLOAD : Load resistance to a battery pack Note2: When connecting a charger to pull V- down, this IC releases from the discharge overcurrent state. Short-circuit Current Protection To monitor a short-circuit current, this IC measures a voltage difference of the sense resistor (RSENS) connected between the RSENS and the VSS pins to detect the current value. When the short -circuit current, which is converted through RSENS for current -to-voltage conversion , exceeds the short -circuit detection voltage (VSHORT), this IC enters the short -circuit state. But it is possible for this IC to avoid its state when the short - circuit current falls below VSHORT within the short-circuit detection delay time (tSHORT). In this state, the DOUT pin becomes Low, and the discharge control FET is turned off to shut off the short - circuit current. A release from the short -circuit state must meet the same condition and delay time as the discharge overcurrent protection.

No.DS-R5619L-E-260529 Charge Overcurrent Protection To monitor a charge current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the charge overcurrent detection delay time (tVDET4) passes under the condition that the charge current, which is converted through RSENS for current-to-voltage conversion, falls below the charge overcurrent detection voltage (V DET4), this IC enters the charge overcurrent state. In this state, the COUT pin becomes Low, and the charge control FET is turned off to shut off the charge current. A release from the charge overcurrent state must meet the following pin condition and delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- > VREL4 tVREL4 V- is pulled up to the VDD level inside the IC. Note Note: By disconnecting the charger, this IC releases from the charge overcurrent state.

0 V Battery Charging

This IC has the selectable charging function for the battery discharged to 0 V.

0 V Battery Charge Function “Permission”

This function allows to charge to the 0 V battery by connecting the charger with the minimum charging voltage (VSTCHG) and more.

0 V Battery Charge Function “Inhibition”

This function inhibits to charge to the battery with the 0 V -battery charging inhibition voltage (VNOCHG) or less even if connecting the charger.

No.DS-R5619L-E-260529 Timing Charts Overcharge voltage and Overcharge current VDET1 VDD COUT VDD VDD VREL4 VSS tVDET1 Connect Charger Disconnect Charger tVREL1 tVDET1 Connect Charger Connect Load tVREL1 tVDET4 t t Charge/ Discharge Current 0 t t Charge Over- Current Disconnect Charger & Connect Load tVREL4 RSENS VDD VSS VDET4 t VREL1 Overcharge (Auto Release type) Timing Diagram

No.DS-R5619L-E-260529 VDET1 VDD COUT VDD VDD VREL4 VSS tVDET1 Connect Charger Disconnect Charger tVREL1 tVDET1 Connect Charger Connect Load tVREL1 tVDET4 t t Charge/ Discharge Current 0 t t Charge Over- Current Disconnect Charger & Connect Load tVREL4 RSENS VDD VSS VDET4 t Overcharge (Latch type) Timing Diagram

No.DS-R5619L-E-260529 Overdischarge / Discharge overcurrent and Short-circuit VDET2 VDD DOUT VDD VSS VDD VSS Connect Load tVREL2 tVDET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current 0 t t tVDET31/tVDET32 tVDET2 tVREL2 Discharge Over- Current Short VREL3 tSHORT tVREL3 tVREL3 RSENS VDD VSS VSHORT t VREL2 VDET31/VDET32 VCHGDET Overdischarge / Discharge Overcurrent (Auto Release type), Short-circuit Timing Diagram

No.DS-R5619L-E-260529 VDET2 VDD DOUT VDD VSS VDD VSS Connect Load tVREL2 tVDET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current 0 t t tVDET31/tVDET32 tVDET2 tVREL2 Discharge Over- Current Short VREL3 tSHORT tVREL3 tVREL3 RSENS VDD VSS VSHORT t VDET31/VDET32 VCHGDET Connect Load Connect Charger Overdischarge / Discharge Overcurrent (Latch type), Short-circuit Timing Diagram

No.DS-R5619L-E-260529

APPLICATION INFORMATION

Typical Application Circuit R5619L Typical Application Circuit External Components Symbol Min. Typ. Max. Resistor RVDD (1) 330Ω 1kΩ RV- (1) — 1kΩ 1.3kΩ RSENS — 1.25mΩ 20mΩ Capacitor CVDD 0.01µF 0.1µF 1µF (1) The total resistance of RVDD and RV must be 1kΩ or more. VDD COUT DOUT VSS RSENS Pack plus Pack minus RV- 1kΩ RSENS 1.25mΩ RVDD 330Ω CVDD 0.1μF R5619L

No.DS-R5619L-E-260529 Technical Notes on External Components

  • The voltage fluctuation is stabilized with RVDD and CVDD. If a RVDD is too large, the detect ion voltage rises by the conduction current at detection . To stabilize the operation, it is recommended to use a resistor of 1kΩ or less for RVDD and a capacitor of 0.01 µF to 1.0 µF for CVDD.
  • RVDD and RV- serve as a current limit resistor when the battery pack is charged with reversed polarity, or a voltage of the connected charger is more than the absolute maximum rating. When using a small resistor for RVDD and RV-, the device’s power dissipation might be exceeded. Therefore, a total of RVDD and RV- must be 1kΩ or more. When using a large resistor for RV-, the charger might not be released by re-connecting to the battery pack after the overdischarge detection. Therefore, RV- must be 1.3 kΩ or less. Production variation and temperature properties are included in the value. RSENS is a resistor for sensing an overcurrent. If the resistance value is too large, power loss becomes also large. By the overcurrent, if the RSENS is not appropriate, the power loss may be beyond the power dissipation of RSENS. Choose an appropriate RSENS according to the cell specification.
  • The typical application circuit diagrams are just examples. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
  • If the positive terminal and the negative terminal of the battery pack are short even though the device has the short protection circuit, a large current may flow through the FET during the short detection delay time. Therefore, select an appropriate FET with large enough current capacitance to endure the large current during the delay time. Selection of External Sense Resistor and MOSFET Short mode is detected by the current base or the relation between V DD at short and total on resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by V SHORT1, VSHORT2, and RSENS, the next formula must be true, otherwise, the short current limit becomes (VSHORT2) / (RSENS + RSS (on)). VSHORT2 RSENS+Rss(on) ≥ VSHORT1 RSENS VSHORT1 = Threshold value of detecting short circuit using RSENS terminal [V] VSHORT2 =Threshold value of detecting short circuit using V- terminal [V] RSENS: = External current sense resistance [] RSS (on) = external MOSFETs’ total ON resistance [] In the short mode, a short current is determined by the relation between RSENS and VSHORT value.

No.DS-R5619L-E-260529 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.

  • Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joining strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack an d delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X -ray inspection in mass production process and evaluation build stage such as the product functions and characteristics confirmation, please confirm X -ray irradiation does not exceed 1.5Gy (absorbed dose for air).

PACKAGE DIMENSIONS DFN1814-6B Ver. A i 1.80 1.40 A B 0.05 INDEX 0.4MAX.

0.05 S S

0.30±0.05 0.5 0.25±0.05

0.05 M AB

0.20±0.05 (0.11)

Ver. U i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5619L (DFN1814-6B) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our sales or distributor before attempting to use AOI. R5619LPart Marking List Product Name ①② Product Name ①② Product Name ①② Product Name ①② R5619L001FA 2A R5619L032FF 3E R5619L050EC 4A R5619L084QK 5M R5619L002FA 2B R5619L033FF 3F R5619L052EC 4C R5619L087UH 5R R5619L003FA 2C R5619L034FF 3G R5619L053EC 4D R5619L089UH 5T R5619L004FA 2D R5619L037FF 3H R5619L056EC 4G R5619L104QK 7J R5619L006WC 2P R5619L024UH 2Y R5619L057EC 4H R5619L008FF 2G R5619L025RA 3L R5619L058FF 4J R5619L009FF 2H R5619L026SA 3M R5619L059BF 4K R5619L010FF 2J R5619L028QK 3A R5619L065EC 4L R5619L011FF 2K R5619L039FF 3N R5619L066KC 4M R5619L013CB 2R R5619L040FF 3P R5619L067KC 4N R5619L014DC 2S R5619L043AA 3T R5619L068LF 4P R5619L016GE 2T R5619L044BA 3U R5619L069LF 4R R5619L018YH 2U R5619L045FF 3V R5619L060JC 4S R5619L021FF 2V R5619L046FF 3W R5619L062JC 4U R5619L022FF 2W R5619L047VC 3X R5619L073YH 5A R5619L027PJ 2Z R5619L048EC 3Y R5619L074MC 5B R5619L031FF 3D R5619L049EC 3Z R5619L079JC 5G 1 2 3 6 5 4 ① ② ③ ④

  1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to our sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without the prior written consent of us. 3. This product and any technical information relating thereto are subject to complementary export controls (so- called KNOW controls) under the Foreign Exchange and Foreign Trade Law, and related politics ministerial ordinance of the law. (Note that the complementary export controls are inapplicable to any application-specific products, except rockets and pilotless aircraft, that are insusceptible to design or program changes.) Accordingly, when exporting or carrying abroad this product, follow the Foreign Exchange and Foreign Trade Control Law and its related regulations with respect to the complementary export controls. 4. The technical information described in this document shows typical characteristics and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under our or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death should first contact us.
  • Aerospace Equipment
  • Equipment Used in the Deep Sea
  • Power Generator Control Equipment (nuclear, steam, hydraulic, etc.)
  • Life Maintenance Medical Equipment
  • Fire Alarms / Intruder Detectors
  • Vehicle Control Equipment (automotive, airplane, railroad, ship, etc.)
  • Various Safety Devices
  • Traffic control system
  • Combustion equipment In case your company desires to use this product for any applications other than general electronic equipment mentioned above, make sure to contact our company in advance. Note that the important requirements mentioned in this section are not applicable to cases where operation requirements such as application conditions are confirmed by our company in writing after consultation with your company. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. The products have been designed and tested to function within controlled environmental conditions. Do not use products under conditions that deviate from methods or applications specified in this datasheet. Failure to employ the products in the proper applications can lead to deterioration, destruction or failure of the products. We shall not be responsible for any bodily injury, fires or accident, property damage or any consequential damages resulting from misuse or misapplication of the products. 8. Quality Warranty 8-1. Quality Warranty Period In the case of a product purchased through an authorized distributor or directly from us, the warranty period for this product shall be one (1) year after delivery to your company. For defective products that occurred during this period, we will take the quality warranty measures described in section 8-2. However, if there is an agreement on the warranty period in the basic transaction agreement, quality assurance agreement, delivery specifications, etc., it shall be followed. 8-2. Quality Warranty Remedies When it has been proved defective due to manufacturing factors as a result of defect analysis by us, we will either deliver a substitute for the defective product or refund the purchase price of the defective product. Note that such delivery or refund is sole and exclusive remedies to your company for the defective product. 8-3. Remedies after Quality Warranty Period With respect to any defect of this product found after the quality warranty period, the defect will be analyzed by us. On the basis of the defect analysis results, the scope and amounts of damage shall be determined by mutual agreement of both parties. Then we will deal with upper limit in Section 8-2. This provision is not intended to limit any legal rights of your company. 9. Anti -radiation design is not implemented in the products described in this document. 10. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 11. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 12. Warning for handling Gallium and Arsenic (GaAs) products (Applying to GaAs MMIC, Photo Reflector). These products use Gallium (Ga) and Arsenic (As) which are specified as poisonous chemicals by law. For the prevention of a hazard, do not burn, destroy, or process chemically to make them as gas or power. When the product is disposed of, please follow the related regulation and do not mix this with general industrial waste or household waste. 13. Please contact our sales representatives should you have any questions or comments concerning the products or the technical information. Official website https://www.nisshinbo-microdevices.co.jp/en/ Purchase information https://www.nisshinbo-microdevices.co.jp/en/buy/