R5613L NISSHINBO | Alldatasheet

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Technical content

One-cell Li -ion Battery Protection IC with High -accuracy Overcurrent Detection and Selectable RESET Function NO.EA-525-221115 The R5613L is a one -cell Li - ion / polymer battery protection IC provid ing overcharge, overdischarge and charge -/ discharge-overcurrent detections. Major features of this device include charge -/discharge-overcurrent detectors with high-accuracy of ±1.0 mV and the RST pin function which can switch for an external MOSFET to either a RESET or a forced-standby state.

  • Lower-resistance of Sense Resistor by Overcurrent Detector with Lower-voltage and High-accuracy: Achieving Heat Reduction on Board
  • Low Consumption Current and Low Standby Current: Achieving Longer Driving Time with A Battery of Small Capacity
  • Switching to RESET or Forced-standby State by RST Pin: Allowed External Control of Load
  • Supply Current Normal Mode: Typ. 2.5 µA / Max. 4.8 µA (Only when selected 0 V Battery Charging “Inhibition” and Discharge Overcurrent Detection with Two-level), Typ. 2.0 µA / Max. 4.0 µA (Except for the above selection) Standby Mode: Max.0.2 µA (VDET2: Auto Release type) Max.0.04 µA (VDET2: Latch type)
  • Detector Selectable Range and Accuracy Overcharge detection voltage (VDET1): 4.2 V to 4.7 V, ±20 mV, Overdischarge detection voltage (VDET2): 2.1 V to 3.2 V, ±35 mV Discharge overcurrent detection voltage1 (VDET31): 0.0070 V to 0.0300 V, ±1 mV Discharge overcurrent detection voltage2 (VDET32): 0.011 V to 0.060 V, ±2 mV Charge overcurrent detection voltage (VDET4): -0.0070 V to -0.0300 V, ±1 mV Short-circuit detection voltage (VSHORT1): 0.030 V ≤ VSHORT1 ≤ 0.120 V, ±4 mV 0.120 V < VSHORT1 ≤ 0.200 V, ±5 mV
  • RST Pin Function type selectable: RESET / Forced-standby type
  • 0 V Battery Charging: Permission / Inhibition
  • Overcharge / Overdischarge Release Voltage Type selectable: Auto Release / Latch
  • Discharge Overcurrent Release Voltage Type selectable: Auto Release1 (V- = VDD×0.8 V) / Auto Release2 (V- = 0.1 V) / Latch
  • Discharge Overcurrent Detection having two-level voltage detection (VDET31/VDET32) selectable: Enable / Disable DFN1616-8B 1.6 mm x 1.6 mm x 0.4 mm
  • Smart Phone, Tablet PC
  • Game, Hearing Aid VDD COUT DOUT VSS R5613L RVDD 330Ω CVDD 0.1μF RV- 1kΩ RSENS RSENS 1.5mΩ Pack plus Pack minus RST RST signal line RRST CRST OVERVIEW KEY BENEFITS KEY SPECIFICATIONS TYPICAL APPLICATION CIRCUIT PACKAGE

APPLICATIONS

NO.EA-525-221115 SELECTION GUIDE Set Output Voltages, Delay Times, and Optional Functions are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5613Lxxx$-TR DFN1616-8B 5,000 pcs Yes Yes xxx: Specify a code that combines the following set output voltages. Refer to Product Code List for details. Overcharge Detection Voltage (VDET1): 4.2 V to 4.7 V in 5 mV step Overcharge Release Voltage (VREL1): 4.0 V to 4.5 V in 5 mV step Overdischarge Detection Voltage (VDET2) (1): 2.1 V to 3.2 V in 50 mV step Overdischarge Release Voltage (VREL2): 2.3 V to 3.2 V in 50 mV step Discharge Overcurrent Detection Voltage 1 (VDET31) (2): 0.0070 V to 0.0300 V in 0.5 mV step Discharge Overcurrent Detection Voltage 2 (VDET32) (2): 0.011 V to 0.060 V in 0.5 mV step Short-Circuit Detection Voltage (VSHORT1) (2): 0.030 V to 0.200 V in 0.5 mV step Charge Overcurrent Detection Voltage (VDET4): -0.0070 V to -0.0300 V in 0.5mV step RST Pin Function Detection Voltage (VRDET): 0.800 V / 1.200 V $: Specify a code that combines the following delay times. Refer to Delay Time Code Table for details. Overcharge Detection / Release Delay Time (tVDET1 / tVREL1) Overdischarge Detection / Release Delay Time (tVDET2 / tVREL2) Discharge Overcurrent Delay Time1/2 (tVDET31 / tVDET32) Discharge Overcurrent Release Delay Time (tVREL3) Charge Overcurrent Detection / Release Delay Time (tVDET4 / tVREL4) Reset Detection / Release Delay Time (tRST/ tRREL) Delay Time Code Table Code tVDET1 [ms] tVREL1 [ms] tVDET2 [ms] tVREL2 [ms] tVDET31 [ms] tVDET32 [ms] tVREL3 [ms] tVDET4 [ms] tVREL4 [ms] tSHORT [ms] tRST [ms] tRREL [ms] A 1024 1.2 64 1.2 3584 16 8.5 17 4 0.28 50 32 D 1024 16 32 1.2 4096 12 8.5 17 4 0.28 50 48 E 1024 16 20 1.2 12 - 8.5 17 4 0.28 50 32 F 1024 16 20 1.2 5120 12 8.5 17 4 0.28 50 48 G 1024 16 128 1.2 16 - 8.5 9 4 0.28 50 32 (1) In the case of 0 V Charging Prohibition (R5613LxxxxD/E/G), set the set output voltage of VDET2 to meet VDET2 > VNOCHG in consideration of their output voltage accuracy. ( 2 ) When selecting each set output voltage of V DET31, V DET32 and V SHORT1, keep from overlapping among them in consideration of their output voltage accuracy. Especially, VSHORT1 should be higher than 7.5 mV from VDET31 and VDET32.

NO.EA-525-221115 : Specify a code that combines the following functions. Refer to Function Code Table for details. Function Code Table Code RST Pin Function RST Pin Function Detection Voltage (VRDET) Overcharge Release Overdischarge Release Discharge Overcurrent

0 V Battery

(VNOCHG) Release Detection (VDET32) A RESET 1.200 V Auto Release Auto Release Auto Release1 Available Permission ─ C RESET 1.200 V Auto Release Auto Release Auto Release1 Unavailable Permission ─ D RESET 1.200 V Auto Release Auto Release Auto Release1 Unavailable Inhibition 1.000 V to 2.200 V E Forced- standby 0.800 V Latch Latch Auto Release2 Available Inhibition 1.000 V to 2.200 V G Forced- standby 0.800 V Latch Latch Latch Unavailable Inhibition 2.350 V J Forced- standby 0.800 V Latch Latch Latch Unavailable Inhibition 1.500 V

NO.EA-525-221115 Product Code List Product Code Table Product Name Set Voltage [V] VDET1 VREL1 VDET2 VREL2 VDET31 VDET32 VSHORT1 VDET4 VNOCHG Please contact our sales representatives if required a combination of delay time and function codes other than the above combinations: AA, DE, EC, ED, FE, GG, and GJ.

NO.EA-525-221115 BLOCK DIAGRAMS R5613L (RESET type) Block Diagram R5613L (Forced-standby type) Block Diagram

NO.EA-525-221115 PIN DESCRIPTION Top View Bottom View R5613L (DFN1616-8B) Pin Configuration R5613L Pin Description Pin No Symbol Pin Description

1 RST RESET / Forced-Standby state input pin

2 V- Charge negative input pin

3 COUT Charge detection output pin, CMOS output

4 DOUT Discharge detection output pin, CMOS output

5 VSS Ground pin for the IC

6 VDD Power supply pin, the substrate level of the IC

7 RSENS Overcurrent detection input pin

8 NC No connection

 The tab on the bottom of the package is substrate level (VDD). It is recommended that the tab be connected to the VDD pin on the board, or otherwise be left floating.

NO.EA-525-221115 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, VSS = 0V) Symbol Item Rating Unit VDD Supply voltage -0.3 to 12 V V- V- pin input voltage VDD-30 to VDD+0.3 V VRSENS RSENS pin input voltage VSS-0.3 to VDD+0.3 V VRST RST pin input voltage VSS-0.3 to VDD+0.3 V VCOUT COUT pin output voltage VDD-30 to VDD+0.3 V VDOUT DOUT pin output voltage VSS-0.3 to VDD+0.3 V PD Power Dissipation Refer to Appendix “Power Dissipation” Tj Junction Temperature Range -40 to 125 C Tstg Storage Temperature Range -55 to 125 C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operations at or over these absolute maximum ratings are not assured.

NO.EA-525-221115 RECOMMENDED OPERATING CONDITION Symbol Item Rating Unit VDD Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used ov er such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.

NO.EA-525-221115

ELECTRICAL CHARACTERISTICS

R5613LxxxXX Electrical Characteristics (Ta = 25C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VSTCHG Minimum charging voltage for 0 V battery charger (2) VDD-V-, VDD-VSS = 0V 1.8 V A VNOCHG 0 V battery charging inhibition voltage (3) VDD-VSS VDD-V- =4V VNOCHG ≤ 1.500V VNOCHG -0.25 VNOCHG VNOCHG +0.25 V A VNOCHG = 2.200V 2.000 2.200 2.500 VNOCHG = 2.350V 2.050 2.350 2.550 VDET1 Overcharge detection voltage RVDD = 330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V B VREL1 Overcharge release voltage RVDD = 330Ω VREL1 -0.045 VREL1 VREL1 +0.045 V B tVDET1 Overcharge detection delay time VDD = 3.6V → VDET1+0.1V tVDET1 ×0.75 tVDET1 tVDET1 ×1.30 s C tVREL1 Overcharge release delay time VDD = 4.8V → VREL1-0.1V tVREL1 = 1.2ms 0.7 1.2 2.5 ms C tVREL1 = 16ms 11.2 16 20.8 VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.035 VDET2 VDET2 +0.035 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.055 VREL2 VREL2 +0.095 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V tVDET2 ×0.75 tVDET2 tVDET2 ×1.30 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25 V 0.9 1.2 1.7 ms E VCHGDET Charger connection detection voltage VDD = VDET2+0.020V, VRSENS = 0V 0.500 0.800 1.100 V A VDET31 Discharge overcurrent detection voltage 1 VDD = 3.6V, V- = VRSENS VDET31 -0.0010 VDET31 VDET31 +0.0010 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS = 0V → VDET31+0.005V V- = VRSENS tVDET31 ×0.75 tVDET31 tVDET31 ×1.30 ms F VDET32 Discharge overcurrent detection voltage 2 VDD = 3.6V, V- = VRSENS VDET32 -0.002 VDET32 VDET32 +0.002 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS = 0V → VDET32+0.005V V- = VRSENS tVDET32 ×0.75 tVDET32 tVDET32 ×1.30 ms F (1) Refer to TEST CIRCUITS for detail information. (2) 0 V battery charging permission supported product only (3) 0 V battery charging inhibition supported product only

NO.EA-525-221115 R5613LxxxXX Electrical Characteristics (Continued) (Ta = 25C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage, VDD = 3.6V, VRSENS = V- 0.030V ≤ VSHORT1 ≤ 0.120V VSHORT1 -0.004 VSHORT1 VSHORT1 +0.004 V F 0.120V < VSHORT1 ≤ 0.200V VSHORT1 -0.005 VSHORT1 +0.005 tSHORT Short detection delay time (2) VDD = 3.6V, VRSENS = 0V → 1V, V- = VRSENS 210 280 380 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage, VDD = 3.6V, VRSENS = 0V VDD×0.850 -0.050 VDD ×0.850 VDD×0.850 +0.050 V F VREL3 Discharge overcurrent release voltage VDD = 3.6V, VRSENS = 0V Auto Release1 VDD×0.800 -0.050 VDD ×0.800 VDD×0.800 +0.050 V F Auto Release2 0.010 0.100 0.250 Latch VDD×0.780 -0.100 VDD ×0.780 VDD×0.780 +0.100 RSHORT Discharge overcurrent release resistance Auto Release1: kΩ F Auto Release2: VDD = 3.6V, V- = 0.2V 20 45 70 tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V, VRSENS = 0V 6.3 8.5 11.1 ms F VDET4 Charge overcurrent detection voltage VDD = 3.6V, V- = VRSENS VDET4 -0.0010 VDET4 VDET4 +0.0010 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6V,VRSENS = 0V → -0.5V, V- = VRSENS tVDET4 ×0.75 tVDET4 tVDET4 ×1.30 ms G VREL4 Charge overcurrent release voltage VDD = 3.6V, VRSENS = 0V 0.010 0.100 0.250 V G tVREL4 Charge overcurrent release delay time VDD = 3.6V, V- = -0.5V → 1V V- = VRSENS 3.0 4 5.2 ms G VRDET RST pin function detection voltage Detect rising edge of RST pin voltage, VDD = 3.6V, V- = VRSENS = 0V VRDET-0.3 VRDET VRDET+0.3 V M VRREL RST pin function release voltage VDD = 3.6V, VRSENS = 0V RESET: Detect rising edge of V- pin voltage 0.500 0.800 1.100 V N Forced Standby: Detect falling edge of V- pin voltage (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time 1 is the same value as tVREL3.

NO.EA-525-221115 R5613LxxxXX Electrical Characteristics (Continued) (Ta = 25C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) IRST RST pin input current, “High” VDD = 3.6V, RST = 3.6V, V- = VRSENS = 0V 1.2 µA M RRST RST pin input resistance VDD = 3.6V, RST = 3.6V, V- = VRSENS = 0V 3.0 MΩ M tRST RST pin function detection delay time VDD = 3.6V, RST = 0V → 3.6V, V- = VRSENS = 0V 35 50 65 ms M tRREL RST pin function release delay time VDD=3.6V, VRSENS=0V RESET: RST = 3.6V→0V, V- = 0V tRREL ×0.70 tRREL tRREL ×1.30 ms N Forced Standby: V- = 3.6V→0V, RST = 0V VOL1 COUT pin NMOS ON voltage IOL = 50µA, VDD = 4.55V 0.4 0.5 V H VOH1 COUT pin PMOS ON voltage IOH = -50µA, VDD = 3.9V 3.4 3.7 V I VOL2 DOUT pin NMOS ON voltage IOL = 50µA, VDD = 1.9V 0.2 0.5 V J VOH2 COUT pin PMOS ON voltage IOH = -50µA, VDD = 3.9V 3.4 3.7 V K IDD Supply current VDD=3.9V, V- = 0V Support for the 0 V battery charging “Inhibition” and the discharge overcurrent detection with two levels. 2.5 4.8 µA L Except for the above support 2.0 4.0 ISTANDBY Standby current VDD=1.9V VDET2: Auto Release 0.2 µA L VDET2: Latch 0.04 (1) Refer to TEST CIRCUITS for detail information.

NO.EA-525-221115 The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C. R5613LxxxXX Electrical Characteristics (-20C ≤ Ta ≤ 60C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VSTCHG Minimum charging voltage for 0 V battery charger (2) VDD-V-, VDD-VSS = 0V 1.8 V A VNOCHG 0 V battery charging inhibition voltage (3) VDD-VSS, VDD-V- = 4V VNOCHG ≤ 1.500V VNOCHG -0.30 VNOCHG VNOCHG +0.30 V A VNOCHG = 2.200V 1.900 2.200 2.600 VNOCHG = 2.350V 2.000 2.350 2.650 VDET1 Overcharge detection voltage RVDD = 330Ω VDET1 -0.025 VDET1 VDET1 +0.025 V B VREL1 Overcharge release voltage RVDD = 330Ω VREL1 -0.055 VREL1 VREL1 +0.055 V B tVDET1 Overcharge detection delay time VDD = 3.6V → VDET1+0.1V tVDET1 ×0.70 tVDET1 tVDET1 ×1.40 s C tVREL1 Overcharge release delay time VDD = 4.8V → VREL1-0.1V tVREL1 = 1.2ms 0.5 1.2 3.0 ms C tVREL1 = 16ms 8 16 40 VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.055 VDET2 VDET2 +0.055 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.065 VREL2 VREL2 +0.105 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V tVDET2 ×0.70 tVDET2 tVDET2 ×1.40 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25V 0.84 1.20 2.00 ms E VCHGDET Charger Connection Detection Voltage VDD = VDET2+0.020V, VRSENS= 0V 0.400 0.800 1.200 V A VDET31 Discharge overcurrent detection voltage 1 VDD = 3.6V, V- = VRSENS VDET31 -0.0015 VDET31 VDET31 +0.0015 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS=0V → VDET31+0.005V V- = VRSENS tVDET31 ×0.75 tVDET31 tVDET31 ×1.35 ms F VDET32 Discharge overcurrent detection voltage 2 VDD = 3.6V, V- = VRSENS VDET32 -0.0025 VDET32 VDET32 +0.0025 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS = 0V → VDET32+0.005V V- = VRSENS tVDET32 ×0.70 tVDET32 tVDET32 ×1.40 ms F (1) Refer to TEST CIRCUITS for detail information. (2) 0 V battery charging permission supported product only (3) 0 V battery charging inhibition supported product only

NO.EA-525-221115 R5613LxxxXX Electrical Characteristics (Continued) (-20C ≤ Ta ≤ 60C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage, VDD = 3.6V, VRSENS = V- 0.030V ≤ VSHORT1 ≤ 0.120V VSHORT1 -0.005 VSHORT1 VSHORT1 +0.005 V F 0.120V < VSHORT1 ≤ 0.200V VSHORT1 -0.008 VSHORT1 +0.008 tSHORT Short detection delay time (2) VDD=3.6V, VRSENS= 0V → 1V V- = VRSENS 175 280 420 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage, VDD = 3.6V, VRSENS = 0V VDD×0.850 -0.100 VDD ×0.850 VDD×0.850 +0.100 V F VREL3 Discharge overcurrent release voltage VDD = 3.6V, VRSENS = 0V Auto Release1 VDD×0.800 -0.100 VDD ×0.800 VDD×0.800 +0.100 V F Auto Release2 0.000 0.100 0.300 Latch VDD×0.780 -0.200 VDD ×0.780 VDD×0.780 +0.200 RSHORT Discharge overcurrent release resistance Auto Release1: kΩ F Auto Release2: tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V VRSENS = 0 V 5.95 8.5 12.0 ms F VDET4 Charge overcurrent detection voltage VDD = 3.6 V, V- = VRSENS VDET4 -0.0015 VDET4 VDET4 +0.0015 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6 V, VRSENS = 0V → -0.5V, V- = VRSENS tVDET4 ×0.70 tVDET4 tVDET4 ×1.40 ms G VREL4 Charge overcurrent release voltage VDD = 3.6V, VRSENS = 0V 0.000 0.100 0.300 V G tVREL4 Charge overcurrent release delay time VDD = 3.6V, V- = -0.5V → 1V, V- = VRSENS 2.8 4 5.6 ms G VRDET RST pin function detection voltage Detect rising edge of RST pin voltage, VDD = 3.6V, V- = VRSENS = 0V VRDET-0.5 VRDET VRDET+0.5 V M VRREL RST pin function release voltage VDD=3.6V, VRSENS=0V RESET: Detect rising edge of V- pin voltage 0.400 0.800 1.200 V N Forced Standby: Detect falling edge of V- pin voltage (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time 1 is the same value as tVREL3.

NO.EA-525-221115 R5613LxxxXX Electrical Characteristics (Continued) (-20C ≤ Ta ≤ 60C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) IRST RST pin input current, “High” VDD = 3.6V, RST = 3.6V, V- = VRSENS = 0V 3.6 µA M RRST RST pin input resistance VDD = 3.6V, RST = 3.6V, V- = VRSENS = 0V 1.0 MΩ M tRST RST pin function detection delay time VDD = 3.6V, RST = 0V → 3.6V, V- = VRSENS = 0V 25 50 75 ms M tRREL RST pin function release delay time VDD=3.6V, VRSENS=0V RESET: RST= 3.6V→0V, V- = 0V tRREL ×0.50 tRREL tRREL ×1.50 ms N Forced Standby: V- = 3.6V→0V, RST = 0V VOL1 COUT pin NMOS ON voltage IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 COUT pin PMOS ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 DOUT pin NMOS ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 COUT pin PMOS ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply current VDD=3.9V, V- = 0V Support for the 0 V battery charging “Inhibition” and the discharge overcurrent detection with two levels. 2.5 6.0 µA L Except for the above support 2.0 5.0 ISTANDBY Standby current VDET2: Auto Release, VDD=1.6V 0.3 µA L VDET2: Latch, VDD=1.9V 0.1 (1) Refer to TEST CIRCUITS for detail information.

NO.EA-525-221115 Test Circuits C VDD VSS COUT RSENS D V VDD VSS DOUT RSENS E VDD VSS DOUT RSENS F V A VDD VSS DOUT RSENS H V A VDD VSS COUT RSENS I V A VDD VSS COUT RSENS J V A VDD VSS DOUT RSENS G V VDD VSS COUT RSENS V V OSCILLOSCOPE VDD DOUT COUT VSS RSENS A B V VDD VSS COUT RSENS

NO.EA-525-221115 K V A VDD VSS DOUT RSENS L A VDD VSS RSENS M A VDD VSS DOUT RSENS COUT RST V N VDD VSS DOUT RSENS COUT RST V

NO.EA-525-221115 THEORY OF OPERATION Overcharge Protection When the overcharge detection delay time (t VDET1) passes under the condition that the VDD pin voltage (V DD) exceeds the overcharge detection voltage (VDET1), this IC enters the overcharge state. In this state, the COUT pin becomes Low and the charge control FET is turned off to stop charging. The V- pin voltage (V-) increases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (V SS), because the discharge current flows via the parasitic diode even when the charge control FET is off. A release from the overcharge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Auto Release V- < VREL4 and VDD < VREL1 or V- > VREL4 and VDD < VDET1 tVREL1 Latch V- > VREL4 and VDD < VDET1 tVREL1 Overdischarge Protection When the overdischarge detection delay time (t VDET2) passes under the condition that the VDD pin voltage (VDD) falls below the overdischarge detection voltage (VDET2), this IC enters the overdischarge state. In this state, the DOUT pin becomes Low and the discharge control FET is turned off to stop discharging. The V- pin voltage (V-) decreases by the Vf voltage (Vf) of the internal parasitic diode than the VSS pin voltage (VSS), because the charge current flows via the parasitic diode even when the discharge control FET is off. In addition, when V- is pulled up to VDD level and exceeds the charger detection voltage (VCHGDET), the IC enters the standby state. It results in reducing the consumption current to a minimum. A release from the overdischarge state must meet the following pin conditions and delay time according to the selected release type. Type Pin Conditions Delay Time Auto Release V- > VCHGDET and VDD > VREL2 or V- < VCHGDET and VDD > VDET2 tVREL2 Latch V- < VCHGDET and VDD > VDET2 tVREL2

NO.EA-525-221115 Discharge Overcurrent Protection In order to monitor a discharge current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. This IC has two levels of the discharge overcurrent detection voltage 1/2 (VDET31 / VDET32). When the discharge overcurrent detection delay time (t VDET31) passes under the condition that the discharge current, which is converted through R SENS for current -to-voltage conversion, exceeds V DET31, this IC enters the discharge overcurrent state. In a case where VDET32 is enabled, this IC enters the discharge overcurrent state when the discharge overcurrent detection delay time (tVDET32) passes under the condition exceeding VDET32. In this state, the DOUT pin becomes Low and the discharge control FET is turned off to shut off the discharge current. A release from the discharge overcurrent state must meet the following pin condition and delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- < VREL3 tVREL3 V- is pulled down to the VSS level inside the IC. Note1 Latch V- < VREL3 tVREL3 V- is pulled up to the VDD level inside the IC. Note2 Note1: It is possible to release the abnormal condition of the load connected to the battery pack. When the discharge overcurrent release delay time (tVREL3) passes under the condition V- falls below VREL3, this IC releases from the discharge overcurrent state. V- can be expressed by the following equation. V- = VCELL × RSHORT / (RSHORT + RV- + RLOAD) VCELL : Battery voltage RSHORT : Discharge overcurrent release resistance RV- : External resistor for V- pin RLOAD : Load resistance to a battery pack Note2: When connecting a charger to pull V- down, this IC releases from the discharge overcurrent state. Short-circuit Current Protection In order to monitor a short -circuit current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the short-circuit detection delay time (tSHORT) passes under the condition that the short-circuit current, which is converted through RSENS for current-to-voltage conversion, exceeds the short-circuit detection voltage (VSHORT), this IC enters the short- circuit state. In this state, the DOUT pin becomes Low and the discharge control FET is turned off to shut off the short - circuit current. A release from the short -circuit state must meet the same condition and delay time as the discharge overcurrent protection.

NO.EA-525-221115 Charge Overcurrent Protection In order to monitor a charge current, this IC measures a voltage difference of the sense resistor (R SENS) connected between the RSENS and the VSS pins to detect the current value. When the charge overcurrent detection delay time (t VDET4) passes under the condition that the charge current, which is converted through RSENS for current-to-voltage conversion, falls below the charge overcurrent detection voltage (V DET4), this IC enters the charge overcurrent state. In this state, the COUT pin becomes Low and the charge control FET is turned off to shut off the charge current. A release from the charge overcurrent state must meet the following pin condition and delay time according to the selected release type. Type Pin Condition Delay Time Remarks Auto Release V- > VREL4 tVREL4 V- is pulled up to the VDD level inside the IC. Note Note: By disconnecting the charger, this IC releases from the charge overcurrent state. RST Pin Function The RST pin function has two types: RESET type and Forced-standby type. RESET Type The RST input pin supports a Pch open -drain output type and has an internal resistor (R RST) to pull down to VSS. When the RST pin function detection delay time (t RST) passes under the condition of VRST > VRDET (VRST: the RST pin input voltage, VRDET: the RST pin function detection voltage), this IC enters the RESET state. After entering the RESET state, the IC turns off the charge and the discharge control FETs to shut off between the battery and the charger. Then protections for overcharge, overdischarge, discharge overcurrent, and short- circuit are stopped. When the RST pin function release delay time (tRREL) passes under the condition of VRST < VRDET or V- > VRREL, this IC releases from the RESET state. Forced-standby Type On the Forced-standby type, a battery pack must not be connected with a charger when the RST pin function runs. The RST input pin supports a CMOS output type and has an internal resistor (RRST) to pull down to VSS. When the RST pin function detection dela y time (tRST) passes under the condition of VRST > VRDET (VRST: the RST pin input voltage, V RDET: the RST pin function detection voltage), the IC turns off the discharge control FET and pulls the V - pin up to VDD inside. Then protections for overcharge, ov erdischarge, discharge overcurrent, and short-circuit are stopped. After that, the IC enters the Forced -standby state when the V- pin voltage (V-) exceeds the RST pin function release voltage (V RREL). It results in reducing the consumption current to a minimum. The RST pin becomes OPEN when an internal switch is turned off. When the RST pin function release delay time ( tRREL) passes under the condition is transited from V - > VRREL to V- < VRREL by connecting the charger, this IC releases from the Forced-standby state. At the time of release, avoid meeting the detection condition (VRST > VRDET).

NO.EA-525-221115

0 V Battery Charging

This IC has the selectable charging function for the battery discharged to 0 V.

0 V Battery Charge Function “Permission”

This function allows to charge to the 0 V battery by connecting the charger with the minimum charging voltage (VSTCHG) and more.

0 V Battery Charge Function “Inhibition”

This function inhibits to charge to the battery with the 0 V-battery charging inhibition voltage (V NOCHG) or less even if connecting the charger.

NO.EA-525-221115 Timing Charts Overcharge voltage and Overcharge current VDET1 VDD COUT VDD VDD VREL4 VSS tVDET1 Connect Charger Disconnect Charger tVREL1 tVDET1 Connect Charger Connect Load tVREL1 tVDET4 t t Charge/ Discharge Current 0 t t Charge Over- Current Disconnect Charger & Connect Load tVREL4 RSENS VDD VSS VDET4 t VREL1 Overcharge (Auto Release type) Timing Diagram

NO.EA-525-221115 VDET1 VDD COUT VDD VDD VREL4 VSS tVDET1 Connect Charger Disconnect Charger tVREL1 tVDET1 Connect Charger Connect Load tVREL1 tVDET4 t t Charge/ Discharge Current 0 t t Charge Over- Current Disconnect Charger & Connect Load tVREL4 RSENS VDD VSS VDET4 t Overcharge (Latch type) Timing Diagram

NO.EA-525-221115 Overdischarge, Discharge overcurrent, and Short-circuit VDET2 VDD DOUT VDD VSS VDD VSS Connect Load tVREL2 tVDET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current 0 t t tVDET31/tVDET32 tVDET2 tVREL2 Discharge Over- Current Short VREL3 tSHORT tVREL3 tVREL3 RSENS VDD VSS VSHORT t VREL2 VDET31/VDET32 VCHGDET Overdischarge / Discharge Overcurrent (Auto Release type), Short-circuit Timing Diagram

NO.EA-525-221115 VDET2 VDD DOUT VDD VSS VDD VSS Connect Load tVREL2 tVDET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current 0 t t tVDET31/tVDET32 tVDET2 tVREL2 Discharge Over- Current Short VREL3 tSHORT tVREL3 tVREL3 RSENS VDD VSS VSHORT t VDET31/VDET32 VCHGDET Connect Load Connect Charger Overdischarge / Discharge Overcurrent (Latch type), Short-circuit Timing Diagram

NO.EA-525-221115 RESET signal RST Pin Function (Forced-standby type) Timing Diagram

NO.EA-525-221115

APPLICATION INFORMATION

Typical Application Circuit R5613LxxxXX Typical Application Circuit External Components Symbol Min. Typ. Max. Resistor RVDD (1) 330Ω 1kΩ RV- (1) — 1kΩ 1.3kΩ RSENS — 1.5mΩ — RRST — 1kΩ 10kΩ Capacitor CVDD 0.01µF 0.1µF 1µF CRST — 0.1µF — (1) The total resistance of RVDD and RV must be 1kΩ or more.

NO.EA-525-221115 Technical Notes on External Components

  • The voltage fluctuation is stabilized with RVDD and CVDD. If a RVDD is too large, the detect ion voltage rises by the conduction current at detection . To stabilize the operation , it is recommended to use a resistor of 1kΩ or less for RVDD and a capacitor of 0.01 µF to 1.0 µF for CVDD.
  • RVDD and RV- serve as a current limit resistor when the battery pack is charged with reversed polarity or a voltage of the connected charger is more than the absolute maximum rating. When using a small resistor for RVDD and RV-, the device’s power dissipation might be exceeded. Therefore, a total of RVDD and RV- must be 1kΩ or more. When using a large resistor for RV-, the charger might not be released by re-connecting to the battery pack after the overdischarge detection. Therefore, RV- must be 1.3 kΩ or less. Production variation and temperature properties are included in the value. RSENS is a resistor for sensing an overcurrent. If the resistance value is too large, power loss becomes also large. By the overcurrent, if the RSENS is not appropriate, the power loss may be beyond the power dissipation of RSENS. Choose an appropriate RSENS according to the cell specification.
  • The typical application circuit diagrams are just examples. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
  • If the positive terminal and the negative terminal of the battery pack are short even though the device has the short protection circuit, a large current may flow through the FET during the short detection delay time. Therefore, select an appropriate FET with large eno ugh current capacitance in order to endure the large current during the delay time. Selection of External Sense Resistor and MOSFET Short mode is detected by the current base or the relation between V DD at short and total on resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by V SHORT1, VSHORT2, and RSENS, the next formula must be true, otherwise, the short current limit becomes (VSHORT2) / (RSENS + RSS (on)). VSHORT2 RSENS+Rss(on) ≥ VSHORT1 RSENS VSHORT1 = Threshold value of detecting short circuit using RSENS terminal [V] VSHORT2 =Threshold value of detecting short circuit using V- terminal [V] RSENS: = External current sense resistance [Ω] RSS (on) = external MOSFETs’ total ON resistance [Ω] In the short mode, a short current is determined by the relation between RSENS and VSHORT value.

NO.EA-525-221115 TECHNICAL NOTES A peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a rated power. When designing a peripheral circuit, please be fully aware of the following points.

  • Please evaluate the product at the PCB level before use, as some symptoms may remain that cannot be confirmed by the evaluation at the IC level.
  • When using any coating or underfill to improve moisture resistance or joi ning strength, evaluate them adequately before using. In certain materials or coating conditions, corrosion by contained constituents, current leakage by moisture absorption, crack and delamination by physical stress can happen. If the curing temperature of the coating material or underfill material exceeds the absolute maximum rating, the electrical characteristics of this product may change.
  • When performing X -ray inspection in mass production process and evaluation build stage such as the product function s and characteristics confirmation, please confirm X -ray irradiation does not exceed 1.5Gy (absorbed dose for air).

POWER DISSIPATION DFN1616-8B PD-DFN1616-8B-(85125)-JE-A i The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following measurement conditions are based on JEDEC STD. 51. Measurement Conditions Item Measurement Conditions Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm × 114.3 mm × 1.6 mm Copper Ratio Outer Layer (First Layer): Less than 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square Through-holes  0.25 mm × 24 pcs Measurement Result (Ta = 25°C, Tjmax = 125°C) Item Measurement Result Power Dissipation 1160 mW Thermal Resistance (ja) ja = 86°C/W Thermal Characterization Parameter (ψjt) ψjt = 53°C/W ja: Junction-to-Ambient Thermal Resistance ψjt: Junction-to-Top Thermal Characterization Parameter Power Dissipation vs. Ambient Temperature Measurement Board Pattern 200 400 600 800 1000 1200 1400 0 25 50 75 100 125 Power Dissipation (mW) Ambient Temperature (°C) 1160

PACKAGE DIMENSIONS DFN1616-8B Ver. A i ∗The tab on the bottom of the package shown by blue circle is a substrate potential (VDD). It is recommended that th is tab be connected to the VDD pin on the board but it is possible to leave the tab floating.

Ver. E i : Product Code … Refer to Part Marking List : Lot Number … Alphanumeric Serial Number R5613L (DFN1616-8B) Part Markings NOTICE There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact our s ales or distributor before attempting to use AOI. R5613L Part Marking List Product Name ①②③ ④ Product Name ①②③ ④ R5613L101AA HA00 R5613L102FE HA 1 0 R5613L108AA HA01 R5613L107GG HA 1 1 R5613L112AA HA02 R5613L113GG HA 1 2 R5613L111DE HA03 R5613L11 4EC HA 1 3 R5613L109GG HA04 R5613L115 GG HA 1 4 R5613L106AA HA0 5 R5613L116DE HA 1 5 R5613L102DE HA0 6 R5613L117GG HA 1 6 R5613L103EC HA0 7 R5613L119 GG HA 1 7 R5613L104ED HA0 8 R5613L120 GJ HA 1 8 R5613L110ED HA0 9 8 5 ①②③ ④⑤⑥ 1 4

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