R5611L

R5611L NISSHINBO | Alldatasheet

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Technical content

1-cell Li-ion Battery Protection IC with High-accuracy Overcurrent Detection, Reset signal NO.EA-393-190123 OUTLINE The R5611L is a one-cell Li- ion / polymer battery protection IC provides an overcurrent detection with using an external resistor. An external FET can be switched ON / OFF by the reset signal of RST. The discharge overcurrent can be detected with high-accuracy of ±3.0mV (-20°C ≤ Ta ≤ 60°C).

FEATURES

Detector Selectable Range and Accuracy (Unless otherwise provided, -20°C ≤ Ta ≤ 60°C(1)) ( in 5mV step, ±55mV, Hysteresis ≤ 0.4V) Output delay time

• Selectable discharge overcurrent detection delay time 1 ···· 4096ms
• Selectable discharge overcurrent detection delay time 2 ···· 16ms (1) The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C.

NO.EA-393-190123 Functions Package

APPLICATIONS

• Li+ / Li Polymer protector of overcharge, overdischarge, overcurrent for battery pack
• High precision protectors for cell-phones and any other gadgets using on board Li+ / Li Polymer battery

NO.EA-393-190123 SELECTION GUIDE Set voltages, Delay times are, and Optional functions are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5611Lxxx$∗-TR DFN1616-8 5,000 pcs Yes Yes xxx: Specify the combination of the following set output voltages. Refer to Product Code List for details. Overcharge detection voltage (VDET1): 4.430 V to 4.495 V in 5 mV step Overcharge release voltage (VREL1): 4.030 V to 4.495 V in 5 mV step Overdischarge detection voltage (VDET2): 2.1 V to 3.0 V in 50 mV step Overdischarge release voltage (VREL2): 2.3 V to 3.1 V in 50 mV step Discharge overcurrent detection voltage 1 (VDET31): 0.015 V to 0.025 V in 1 mV step Discharge overcurrent detection voltage 2 (VDET32): 0.024 V to 0.045 V in 1 mV step Short-circuit detection voltage (VSHORT): 0.055 V to 0.200 V in 10 mV step Charge overcurrent detection voltage (VDET4): -0.017 V to -0.024 V in 1mV step $: Specify the combination of overcharge detection / release delay time ( tVDET1/tVREL1), overdischarge detection / release delay time ( tVDET2/tVREL2), discharge overcurrent delay time1/2 (t VDET31/tVDET32), discharge overcurrent release delay time ( tVREL3), charge overcurrent detection / release delay time (tVDET4/tVREL4). Refer to Delay Time Code Table for details. ∗: Specify the combination of functions. Refer to Function Code Table for details. Delay Time Code Table / Function Code Table Code tRREL Unit Reset Released BC 48 ms RST only DE 32 ms RST or VSHORT2 Product Code List The product code is determined by a combination of the three digits set output voltage code, the delay time code, and the function code. Product Code Table Product Name Set Output Voltage (V) Delay Time VDET1 VREL1 VDET2 VREL2 VDET31 VDET32 VSHORT VDET4 tRREL

NO.EA-393-190123 BLOCK DIAGRAMS VDD VSS RSENS V- Vshort2 Oscillator Logic Circuit Logic Circuit Counter Delay DOUT COUT Level Shift VDET1 VDET2 VDET4 VDET31 VDET32 Vshort VREL3 Reset Circut RST VDS2 NC R5611L Block Diagram

NO.EA-393-190123 PIN DESCRIPTIONS DFN1616-8 Pin No Symbol Pin Description

1 RST Forced OFF input pin for COUT and DOUT pins

2 V- Charger negative input pin

3 COUT Overcharge detection output pin, CMOS output

4 DOUT Overdischarge detection output pin, CMOS output

5 VSS Ground pin for the IC

6 VDD Power supply pin, the substrate level of the IC

7 RSENS Overcurrent detection input pin

8 NC No connection

NO.EA-393-190123 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, VSS = 0V) Symbol Item Rating Unit VDD Supply voltage -0.3 to 12 V V- V- pin input voltage VDD-30 to VDD+0.3 V VRSENS RSENS pin input voltage VSS-0.3 to VDD+0.3 V VRST RST pin input voltage VSS-0.3 to VDD+0.3 V VCOUT COUT pin output voltage VDD-30 to VDD+0.3 V VDOUT DOUT pin output voltage VSS-0.3 to VDD+0.3 V PD Power Dissipation(1) 150 mW Tj Junction Temperature Range -40 to 125 °C Tstg Storage Temperature Range -55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and may degrade the lifetime and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITION Symbol Item Rating Unit VDD Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if they are used ov er such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer to POWER DISSIPATION in SUPPLEMENTSRY ITEMS for detail information.

NO.EA-393-190123

ELECTRICAL CHARACTERISTICS

R5611LxxxXX Electrical Characteristics (Ta = 25°C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VST Minimum operating voltage for 0V battery charge VDD-V-, VDD-VSS = 0V 1.8 V A VDET1 Overcharge detection voltage R1 = 330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V B VREL1 Overcharge release voltage R1 = 330Ω VREL1 -0.045 VREL1 VREL1 +0.045 V B tVDET1 Overcharge detection tVREL1 Overcharge release delay VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.035 VDET2 VDET2 +0.035 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.100 VREL2 VREL2 +0.100 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V 44 64 84 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25V 0.6 1.2 1.7 ms E VDET31 Discharge overcurrent detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET31 -0.0025 VDET31 VDET31 +0.0025 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS=0V → VDET31+0.005V V- = VRSENS 3072 4096 4916 ms F VDET32 Discharge overcurrent detection voltage 2 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET32 -0.0035 VDET32 VDET32 +0.0035 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS = 0V → VDET32+0.010V V- = VRSENS 11 16 21 ms F VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, VRSENS = V- VSHORT1 -0.015 VSHORT1 VSHORT1 +0.015. V F (1) Refer to TEST CIRCUITS for detail information.

NO.EA-393-190123 R5611LxxxXX Electrical Characteristics (Continued) (Ta = 25°C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) tSHORT Short detection delay time (2) VDD = 3.6V, VRSENS = 0V → 1V V- = VRSENS 170 280 400 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage VDD = 3.6V, VRSENS = 0V VDD-1.8 VDD-1.45 VDD-1.1 V F VREL3 Discharge overcurrent release voltage Detect falling edge of V- pin voltage VDD = 3.6V, VRSENS = 0V 0.706×VDD -0.12 0.706 ×VDD 0.706×VDD +0.12 V F RSHORT Discharge overcurrent tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V VRSENS = 0V 5.9 8.5 11.1 ms F VDET4 Charge overcurrent detection voltage Detect falling edge of RSENS pin voltage VDD = 3.6 V, V- = VRSENS VDET4 -0.0025 VDET4 VDET4 +0.0025 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6 V, VRSENS = 0V → -0.5V V- = VRSENS 11 17 23 ms G tVREL4 Charge overcurrent release delay time VDD=3.6V, V- = -0.5V → 0V V- = VRSENS 2.8 4 5.2 ms G VDS Delay Time Shortening Mode Voltage VDD = 3.6 V -2.6 -2.0 -1.4 V - VRDET Detection and Release voltage at Charge and discharge OFF mode Detect rising edge of RST pin voltage VDD=3.6V, V- = VRSENS = 0V 0.9 1.2 1.5 V M IRST RST pin “High” input current VDD = 3.6V, RST=3.6V V- = RSENS = 0V 1.2 µA M RRST RST pin resistance VDD = 3.6V, RST=3.6V V- = RSENS = 0V 3.0 MΩ M tRST RST pin delay time VDD=3.6V, RST = 0V → 3.6V V- = VRSENS = 0V 35 50 65 ms M tRREL RST pin release delay time VDD=3.6V, RST = 3.6V → 0V V- = VRSENS = 0V tRREL x 0.7 tRREL tRREL x 1.3 ms M VOL1 COUT Nch. ON voltage IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 COUT Pch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 DOUT Nch. ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 DOUT Pch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply current VDD = 3.9 V, V- = 0 V 3 6 µA L ISTANDBY Standby current VDD = 1.9 V 0.5 µA L (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time is the same value as tVREL3.

NO.EA-393-190123 The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C. R5611LxxxXX Electrical Characteristics (-20°C ≤ Ta ≤ 60°C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VST Minimum operating voltage for 0V battery charge VDD-V-, VDD-VSS = 0V 1.8 V A VDET1 Overcharge detection voltage R1 = 330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V B VREL1 Overcharge release voltage R1 = 330Ω VREL1 -0.055 VREL1 VREL1 +0.055 V B tVDET1 Overcharge detection tVREL1 Overcharge release delay VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.055 VDET2 VDET2 +0.055 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.065 VREL2 VREL2 +0.105 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V 32 64 128 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25V 0.5 1.2 3.0 ms E VDET31 Discharge overcurrent detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET31 -0.003 VDET31 VDET31 +0.003 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS=0V → VDET31+0.005V V- = VRSENS 2660 4096 5530 ms F VDET32 Discharge overcurrent detection voltage 2 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET32 -0.005 VDET32 VDET32 +0.005 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS =0V → VDET32+0.010V V- = VRSENS 8 16 24 ms F VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, VRSENS = V- VSHORT1 -0.020 VSHORT1 VSHORT1 +0.020 V F (1) Refer to TEST CIRCUITS for detail information.

NO.EA-393-190123 The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C. R5611LxxxXX Electrical Characteristics (Continued) (-20°C ≤ Ta ≤ 60°C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) tSHORT Short detection delay time (2) VDD = 3.6V, VRSENS = 0V → 1V V- = VRSENS 140 280 560 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage VDD = 3.6V, VRSENS = 0V VDD-1.9 VDD-1.45 VDD-1.0 V F VREL3 Discharge overcurrent release voltage Detect falling edge of V- pin voltage VDD = 3.6V, VRSENS = 0V 0.706×VDD -0.15 0.706 ×VDD 0.706×VDD +0.15 V F RSHORT Discharge overcurrent release resistance VDD = 3.6V, V- = 2.662V 5.0 9.5 15 kΩ F tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V VRSENS = 0V 4.25 8.5 17 ms F VDET4 Charge overcurrent detection voltage Detect falling edge of RSENS pin voltage VDD = 3.6 V, V- = VRSENS VDET4 -0.003 VDET4 VDET4 +0.003 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6 V, VRSENS = 0V → -0.5V V- = VRSENS 10 17 25 ms G tVREL4 Charge overcurrent release delay time VDD=3.6V, V- = -0.5V → 0V V- = VRSENS 2 4 8 ms G VDS Delay Time Shortening Mode Voltage VDD = 3.6 V -2.7 -2.0 -1.2 V - VRDET Detection and Release voltage at Charge and discharge OFF mode Detect rising edge of RST pin voltage VDD=3.6V, V- = VRSENS = 0V 0.3 1.2 1.8 V M IRST RST pin “High” input current VDD = 3.6V, RST=3.6V V- = RSENS = 0V 3.6 µA M RRST RST pin resistance VDD = 3.6V, RST=3.6V V- = RSENS = 0V 1 MΩ M tRST RST pin delay time VDD=3.6V, RST = 0V → 3.6V V- = VRSENS = 0V 25 50 75 ms M tRREL RST pin release delay time VDD=3.6V, RST = 3.6V → 0V V- = VRSENS = 0V tRREL x 0.5 tRREL tRREL x 1.5 ms M VOL1 COUT Nch. ON voltage IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 COUT Pch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 DOUT Nch. ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 DOUT Pch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply current VDD = 3.9 V, V- = 0 V 3 8 µA L ISTANDBY Standby current VDD = 1.9 V 0.6 µA L (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time is the same value as tVREL3.

NO.EA-393-190123 Test Circuits V V OSCILLOSCOPE VDD DOUT COUT VSS RSENS A C VDD VSS COUT RSENS D V VDD VSS DOUT RSENS E VDD VSS DOUT RSENS F V A VDD VSS DOUT RSENS H V A VDD VSS COUT RSENS I V A VDD VSS COUT RSENS J V A VDD VSS DOUT RSENS B V VDD VSS COUT RSENS G V VDD VSS COUT RSENS

NO.EA-393-190123 M A VDD VSS DOUT RSENS COUT RST V K V A VDD VSS DOUT RSENS L A VDD VSS RSENS

NO.EA-393-190123 OPERATION Overcharge Detection, VD1 The VD1 monitors a VDD pin voltage during charge. When the VDD voltage crosses overcharge detection voltage (VDET1) (1), the VD1 can sense overcharge and the output of COUT pin becomes “L” and stop charging by turning off the external Nch. MOSFET. After detecting overcharge, when the VDD pin voltage is equal or less than the released voltage from overcharge (V REL1) (1), or when the VDD pin voltage is less than the overcharge detection voltage (VDET1) (1), if the charger is removed, VD1 is released, then the output level of COUT becomes “H” and by turning on the external Nch. MOSFET, the battery charger is ready to work again. However, depending on the characteristics of external components such as MOSFETs, release conditions may be not enough and a kind of load must be set to release the overcharge. When the Input level of VDD pin is equal or more than overcharge detector threshold, and while a charger is disconnected from the battery pack, if a load system is connected to the battery pack, the output level of COUT pin is “L”. However, load current can be drawn through a parasitic diode of an external Nch. MOSFET. Then, when the voltage level of VDD pin becomes lower than overcharge detector threshold, the output level of COUT pin becomes “H”. Output delay time for overcharge detect and released overcharge is internally fixed respectively. Although the VDD pin voltage goes up to a higher level than overcharge detector threshold within the output delay time VDET1)(1), VD1 would not work for detecting overcharge. If the action for VD1 to release is done and the condition returns to the initial one within the output delay time (tVREL1) (1), VD1 cannot be released. A level shifter is built in a buffer driver for the COUT pin, therefore, the “L” level is equal to the voltage level of V- pin. The output type of COUT pin is CMOS type and its output level is in between VDD and V-. Overdischarge Detection, VD2 or VDET2 The VD2 monitors a VDD pin voltage during discharge. When the VDD pin voltage crosses the overdischarge detector threshold (VDET2) (1) from a high level to a lower level than V DET2, the VD2 senses overdischarge and stop discharge by turning off an external Nch. MOSFET. To reset the VD2 with the DOUT pin level being “H” again after detecting overdischarge, if VDD pin voltage is equal or less than overcharge detector threshold, a charge current flows through a parasitic diode of the external Nch. MOSFET. After that, when V DD voltage is more than overdischarge threshold, DOUT pin becomes "H", and by tuning on the external Nch. MOSFET, discharge is possible. In the case that a charger is connected to the battery pack, and VDD level is more than overdischarge detection voltage, the output level of DOUT pin becomes “H” immediately. Without connecting a charger, if VDD pin voltage is equal or more than the released voltage from overdischarge (VREL2) (1), the output level of DOUT becomes “H”. When a cell voltage is equal to 0V, connecting a charger to the battery pack makes COUT pin become "H" and the system is allowable for charge while the voltage of the charger is more than the maximum limit of the minimum operating voltage (VST) (1) for 0V charge. An output delay for overdischarge detection (tVDET2) (1) is fixed internally. Although the voltage of VDD pin becomes equal or less than overdischarge detector threshold and if it becomes higher than overdischarge detector threshold within output delay time, overdischarge detector does not work. Output delay time for release from overdischarge (tVREL2) (1) is also set internally. After detecting overdischarge by VD2, supply current The output type of DOUT pin is CMOS type and its output level is in between VDD and VSS. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”.

NO.EA-393-190123 Discharge overcurrent detection / Short-circuit protection, VD31 and VD32 While charge and discharge are acceptable with the battery pack, current flows through an external sense resistance and the generated drop voltage by the current is detected as RSENS pin voltage, VD3 monitors the voltage level of RSENS pin. In the cause of such as the external short circuit, if the voltage level of RSENS pin may become equal or more than the discharge overcurrent detection voltage (VDET3) (1) and less than the short detector threshold (V SHORT) (1), the discharge overcurrent detect ion works. When the voltage level of RSENS pin becomes equal or more than the short detector threshold voltage, the short circuit protector works and the output level of DOUT becomes “L”, and by turning off an external Nch. MOSFET, VD3 protects against flowing extremely large current into the circuit. An output delay time for the discharge overcurrent detection is internally fixed. Even if the voltage of RSENS pin becomes equal or more than the discharge overcurrent detection voltage and less than the short detection voltage (VSHORT) (1), if the RSENS pin voltage becomes less than the overcurrent detection voltage within the output delay time (tVDET3) (1), the overcurrent detection does not work. Even if RSENS pin becomes equal or more than the short circuit detection voltage, if RSENS pin becomes lower than the short detection voltage within the short detection delay time (tSHORT) (1), the short detection does not work. Output delay time for release from discharge overcurrent, short circuit is also set internally (tVREL3) (1). The V- pin has a built-in pull down resistor connected to the VSS pin. After a discharge overcurrent or short circuit protection is detected, by removing a cause of overcurrent or external short circuit, the voltage level of V- is pulled down through the resistor for release from overcurrent to the VSS level. While charge and discharge are acceptable for the battery pack, or normal mode, the resistor is inactive. Then, when the voltage level of V - pin becomes equal or less than the released voltage from discharge overcurrent (VREL3) (1), both protection circuits are released automatically. Resistor for release from discharge overcurrent is active when discharge overcurrent or short circuit is detected. V- pin voltage is represented by the equation below when V - pin is pulled down by discharge overcurrent or short detecting. VDD : Input Voltage (Cell Voltage) (2) RSHORT : Internal resistance of V- pin when it is pulled down(1) R2 : External resistor between Pack minus and V- pin (2) RL : Resistance of load between Pack plus and Pack minus (2) Output delay time for discharge overcurrent is necessarily set shorter than output delay time for overdischarge. Therefore, if discharge overcurrent is detected, and at the same time, V DD pin voltage becomes lower than overdischarge detection voltage, discharge overcurrent detection is predominant. By disconnecting load from the battery pack, the battery pack is automatically released from overcurrent state. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”. (2) Indicates the value shown in the table of “[8] Technical Notes”. DD shortL short VR R R RV + +=−

NO.EA-393-190123 Charge overcurrent detection, VD4 While charge and discharge are acceptable with the battery pack, VD4 senses RSENS pin voltage. For example, if the battery pack is charged by an inappropriate charger, overcurrent flows through an external resistance and the generated voltage drop is monitored as RSENS pin voltage, and the RSENS pin voltage becomes equal or less than the charge overcurrent detection voltage (V DET4) (1 ), then, the output of C OUT becomes “L”, and VD4 protects against flowing excess current in the circuit by turning off the external Nch MOSFET. Output delay of the excess charge current is internally fixed. (t VDET4) (1) Even the voltage level of RSENS pin becomes equal or lower than the charge overcurrent detection voltage, if the voltage is higher than the VD4 threshold within the delay time, the charge overcurrent state is not detected. Output delay time for release from charge overcurrent is also set internally (tVREL4) (1). VD4 can be released by disconnecting the abnormal charger. Delay time in short-circuit mode When the COUT pin is "H", the output delay time of overcharge, and overdischarge can be shorter than those setting values by forcing equal or lower than the delay shortening mode detection voltage (V DS2 Typ. -2.0V) and more than -3.0V to V- pin. RESET function When the R5611 receives a reset signal as RST to input “H”, not only the output of DOUT pin but the output of COUT switches to “L” level after the internal fixed delay time. After detecting reset signal, the R5611 can be reset and the output of DOUT and COUT becomes “H” after RST is made open or V- voltage. RST terminal is connected to V- internal resistance. After detecting reset signal, V DETx (x=1,2,31,32,4) and VSHORT can’t work. On the other hands, after detecting VDETX or VSHORT, Reset can’t work. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”.

NO.EA-393-190123 Timing Charts Overcharge voltage and Overcharge current VDET1 VDD COUT VDD VDD VDET32 VSS VDET4 tVDET1 Connect Charger Disconnect Charger tVREL1 tVDET1 Connect Charger Connect Load tVREL1 tVDET4 t t Charge/ Discharge Current 0 t t Charge Overcurren t Disconnect Charger & Connect Load tVREL4 RSENS VDD VDET32 VSS VDET4 t VREL1 Overcharge Timing Diagram

NO.EA-393-190123 Overdischarge, Discharge overcurrent, and Short-circuit VDET2 VDD DOUT VDD VSS VDD VSS VDET4 Connect Load tVREL2 tVDET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current t t tVDET31 or tVDET 32 DET31 or 32 tVDET2 tVREL2 Discharge Overcurrent Short VREL3 tSHORT tVREL3 tVREL3 RSENS VDD VSS VDET4 VSHORT t VREL2 VDET31 or VDET32 VDET31 or VDET32 Overdischarge, Discharge Overcurrent, and Short-circuit Timing Diagram

NO.EA-393-190123

APPLICATION INFORMATION

Typical Application Circuit VDD COUT DOUT VSS 0.1µF 1kΩ 330Ω R5611L RVDD CVDD RV- RSENS RSENS 5mΩ Pack plus Pack minus RST RST signal line RRST CRST R5611LxxxXX Typical Application Circuit External Components Symbol Min. Typ. Max. Resistor R VDD(1) 330Ω 1kΩ RV-(1) - 1kΩ 1.3kΩ RSENS - 5mΩ 20mΩ RRST - 1kΩ 10kΩ Capacitor CVDD 0.01µF 0.1µF 1µF CRST - 0.1µF - (1) The total resistance of RVDD and RV must be 1kΩ or more.

NO.EA-393-190123 Technical Notes on the Selection Components

• The voltage fluctuation is stabilized with RVDD and CVDD. If a RVDD is too large, by the conduction current at detection, the detection voltage rises. Therefore, it is recommended to use a resistor of 1kΩ or less for RVDD and a capacitor of 0.01 µF to 1.0 µF for CVDD in order to stabilize the operation.
• R VDD and RV- serve as a current limit resistor when the battery pack is charged with reversed polarity or a voltage of the connected charger is more than the absolute maximum rating. When using a small resistor for RVDD and RV-, the device’s power dissipation might be exceeded. Therefore, a total of RVDD and RV- must be 1kΩ or more. When using a large resistor for RV-, the charger might not be released by re-connecting to the battery pack after the overdischarge detection. Therefore, RV- must be 1.3 k Ω or less. Production variation and temperature properties are included in the value. RSENS is a resistor for sensing an excess current. If the resistance value is too large, power loss becomes also large. By the excess current, if the RSENS is not appropriate, the power loss may be beyond the power dissipation of RSENS. Choose an appropriate RSENS according to the cell specification. RRST and CRST are used to control noise. RRST must be less than 10kΩ.
• The typical application circuit diagrams are just examples. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
• If the positive terminal and the negative terminal of the battery pack are short even though the device has the short protection circuit, a large current may flow through the FET during the delay time until detecting the short circuit. Therefore, select an appropriate FET with large enough current capacitance in order to endure the large current during the delay time.

NO.EA-393-190123 Selection of External FET Short mode is detected by the current base or the relation between V DD at short and total on resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by V SHORT1, VSHORT2, and R3, the next formula must be true, otherwise, the short current limit becomes (VSHORT2) / (R3 + RSS (on)) Vshort1≥R3 + Rss(on) Vshort2 VSHORT1 = Threshold value of detecting short circuit using RSENS terminal (V) VSHORT2 =Threshold value of detecting short circuit using V- terminal (V) R3 = External current sense Resistance (Ω) RSS (on) = external MOSFETs’ total ON Resistance (Ω) Notes: in case of the short mode is specified at short current determined by the relation between R3 and VSHORT value, Ex. As the RSENS, in case that the 3mΩ is selected as R3 and if the V DD* becomes 3.3V, to detect short at 26.7A with VSHORT1 = 0.080V and VSHORT2=VDD-1.45, the RSS (on) must be 66mΩ or lower. Otherwise, according to the RSS (on), short current limit is lower than expected.

PACKAGE DIMENSIONS DFN-1616-8 Ver. A i ∗ The tab on the bottom of the package shown by blue circle is a substrate potential (VDD). It is recommended that this tab be connected to the VDD pin on the board but it is possible to leave the tab floating.

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