R5610L

R5610L NISSHINBO | Alldatasheet

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Technical content

One-cell Li-ion Battery Protection IC with High-accuracy Overcurrent Detection NO.EA-392-181115 OUTLINE The R5610L is a one-cell Li- ion / polymer battery protection IC provides an overcurrent detection with using an external resistor. The discharge overcurrent can be detected with high- accuracy of ±3.0mV (-20°C ≤ Ta ≤ 60°C).

FEATURES

Detector Selectable Range and Accuracy (Unless otherwise provided, -20°C ≤ Ta ≤ 60°C) Output delay time

• Selectable discharge overcurrent detection delay time 1 ···· 4096ms
• Selectable discharge o vercurrent detection delay time 2 ···· 16ms Functions Package

NO.EA-392-181115

APPLICATIONS

• Li+ / Li Polymer protector of overcharge, overdischarge, overcurrent for battery pack
• High precision protectors for cell-phones and any other gadgets using on board Li+ / Li Polymer battery SELECTION GUIDE Set voltages, Delay times are, and Optional functions are user-selectable. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R5610LxxxAQ-TR DFN1816-6 5,000 pcs Yes Yes xxx: Specify the combination of the following set output voltages. Refer to Product Code List for details. Overcharge detection voltage (VDET1) : 4.470 V to 4.535 V in 5 mV step Overcharge release voltage (VREL1) : 4.070 V to 4.535 V in 5 mV step Overdischarge detection voltage (VDET2) : 2.1 V to 3.0 V in 50 mV step Overdischarge release voltage (VREL2) : 2.3 V to 3.1 V in 50 mV step Discharge overcurrent detection voltage 1 (VDET31) : 0.015 V to 0.025 V in 1 mV step Discharge overcurrent detection voltage 2 (VDET32) : 0.024 V to 0.045 V in 1 mV step Short-circuit detection voltage (VSHORT) : 0.055 V to 0.200 V in 10 mV step Charge overcurrent detection voltage (VDET4) : -0.026 V to -0.045 V in 1mV step Product Code List The product code is determined by a combination of the three digits set output voltage code, the delay time code, and the function code. Product Code Table Product Name Set Output Voltage (V) VDET1 VREL1 VDET2 VREL2 VDET31 VDET32 VSHORT VDET4

NO.EA-392-181115 BLOCK DIAGRAM VDD VSS RSENS V- Vshort2 Oscillator Logic Circuit Logic Circuit Counter Delay DOUT COUT Level Shift VDET1 VDET2 VDET4 VDET31 VDET32 Vshort VREL3 VDS2 R5610L Block Diagram

NO.EA-392-181115 PIN DESCRIPTIONS Top View R5610L (DFN1816-6) Pin Configuration R5610L Pin Description Pin No Symbol Pin Description

1 V- Charger negative input pin

2 COUT Overcharge detection output pin, CMOS output

3 DOUT Overdischarge detection output pin, CMOS output

4 VSS Ground pin for the IC

5 VDD Power supply pin, the substrate level of the IC

6 RSENS Overcurrent detection input pin

NO.EA-392-181115 ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit VDD Supply voltage -0.3 to 12 V V- V- pin input voltage VDD-30 to VDD+0.3 V VRSENS RSENS pin input voltage VSS-0.3 to VDD+0.3 V VCOUT COUT pin output voltage VDD-30 to VDD+0.3 V VDOUT DOUT pin output voltage VSS-0.3 to VDD+0.3 V PD Power Dissipation(1) 150 mW Tj Junction Temperature Range -40 to 125 °C Tstg Storage Temperature Range -55 to 125 °C ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operations at or over these absolute maximum ratings are not assured. RECOMMENDED OPERATING CONDITION Symbol Item Rating Unit VDD Operating Input Voltage 1.5 to 5.0 V Ta Operating Temperature Range −40 to 85 °C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. (1) Refer to POWER DISSIPATION in SUPPLEMENTSRY ITEMS for detail information.

NO.EA-392-181115

ELECTRICAL CHARACTERISTICS

R5610LxxxAQ Electrical Characteristics (Ta = 25°C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VST Minimum operating voltage for 0V battery charge VDD-V-, VDD-VSS = 0V 1.8 V A VDET1 Overcharge detection voltage R1 = 330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V B VREL1 Overcharge release voltage R1 = 330Ω VREL1 -0.045 VREL1 VREL1 +0.045 V B tVDET1 Overcharge detection tVREL1 Overcharge release delay VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.035 VDET2 VDET2 +0.035 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.100 VREL2 VREL2 +0.100 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V 44 64 84 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25V 0.6 1.2 1.7 ms E VDET31 Discharge overcurrent detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET31 -0.0025(2) VDET31 VDET31 +0.0025 (2) V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS=0V → VDET31+0.005V V- = VRSENS 3072 4096 4915 ms F VDET32 Discharge overcurrent detection voltage 2 Detect rising edge of RSENS pin voltage V DD = 3.6V, V- = VRSENS VDET32 -0.0035(3) VDET32 VDET32 +0.0035 (3) V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS = 0V → VDET32+0.010 V- = VRSENS 11 16 21 ms F VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, VRSENS = V- VSHORT1 -0.015 VSHORT1 VSHORT1 +0.015. V F (1) Refer to TEST CIRCUITS for detail information. (2) ±0.0025V accuracy is guaranteed when the threshold is set between 0.010V and 0.042V, and ±6% accuracy is guaranteed when the threshold is set between 0.043V and 0.100V. (3) ±0.0035V accuracy is guaranteed when the threshold is set between 0.030V and 0.042V ± 8% accuracy is guaranteed when the threshold is set between 0.043V and 0.100V.

NO.EA-392-181115 R5610LxxxAQ Electrical Characteristics (Continued) (Ta = 25°C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) tSHORT Short detection delay time (2) VDD = 3.6V, VRSENS = 0V → 1V V- = VRSENS 170 280 400 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage VDD = 3.6V, VRSENS = 0V VDD-1.8 VDD-1.45 VDD-1.1 V F VREL3 Discharge overcurrent release voltage Detect falling edge of V- pin voltage VDD = 3.6V, VRSENS = 0V 0.706×VDD -0.12 0.706 ×VDD 0.706×VDD +0.12 V F RSHORT Discharge overcurrent tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V VRSENS = 0 V 5.9 8.5 11.1 ms F VDET4 Charge overcurrent detection voltage Detect falling edge of RSENS pin voltage VDD = 3.6 V, V- = VRSENS VDET4 -0.0025(3) VDET4 VDET4 +0.0025(3) V G tVDET4 Charge overcurrent detection delay time VDD = 3.6 V, VRSENS = 0V → -0.5V V- = VRSENS 11 17 23 ms G tVREL4 Charge overcurrent release delay time VDD=3.6V, V- = -0.5V → 1V V- = VRSENS 2.8 4 5.2 ms G VDS SEL1 pin “High” input voltage VDD = 3.6 V -2.6 -2.0 -1.4 V M VOL1 DOUT Nch. ON voltage IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 DRAIN Nch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 CB1 Nch. ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 CB2 Nch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply current VDD = 3.9 V, V- = 0 V 3 6 µA L ISTANDBY Standby current VDD = 1.9 V 0.5 µA L (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time is the same value as tVREL3. (3) ±0.0025V accuracy is guaranteed when the threshold is set between -0.010V and -0.042V ± 6% accuracy is guaranteed when the threshold is set between -0.043V and -0.100V.

NO.EA-392-181115 The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C. R5610LxxxAQ Electrical Characteristics (-20°C ≤ Ta ≤ 60°C) Symbol Parameter Conditions Min. Typ. Max. Unit Circuit (1) VDD1 Operating input voltage VDD-VSS 1.5 5.0 V A VST Minimum operating voltage for 0V battery charge VDD-V-, VDD-VSS = 0V 1.8 V A VDET1 Overcharge detection voltage R1 = 330Ω VDET1 -0.020 VDET1 VDET1 +0.020 V B VREL1 Overcharge release voltage R1 = 330Ω VREL1 -0.055 VREL1 VREL1 +0.055 V B tVDET1 Overcharge detection tVREL1 Overcharge release delay VDET2 Overdischarge detection voltage Detect falling edge of supply voltage VDET2 -0.055 VDET2 VDET2 +0.055 V D VREL2 Overdischarge release voltage Detect rising edge of supply voltage VREL2 -0.065 VREL2 VREL2 +0.105 V E tVDET2 Overdischarge detection delay time VDD = VDET2+0.15V → VDET2-0.1V 32 64 128 ms D tVREL2 Overdischarge release delay time VDD = VDET2-0.2V → VREL2+0.25V 0.5 1.2 3.0 ms E VDET31 Discharge overcurrent detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET31 -0.003 VDET31 VDET31 +0.003 V F tVDET31 Discharge overcurrent 1 detection delay time VDD = 3.6V, VRSENS=0V → VDET31+0.005V V- = VRSENS 2660 4096 5530 ms F VDET32 Discharge overcurrent detection voltage 2 Detect rising edge of RSENS pin voltage VDD = 3.6V, V- = VRSENS VDET32 -0.005 VDET32 VDET32 +0.005 V F tVDET32 Discharge overcurrent 2 detection delay time VDD = 3.6V, VRSENS = 0V → VDET32+0.010 V- = VRSENS 11 16 21 ms F VSHORT1 Short detection voltage 1 Detect rising edge of RSENS pin voltage VDD = 3.6V, VRSENS = V- VSHORT1 -0.02 VSHORT1 VSHORT1 +0.02. V F (1) Refer to TEST CIRCUITS for detail information.

NO.EA-392-181115 The specifications are guaranteed by design engineering at -20°C ≤ Ta ≤ 60°C. R5610LxxxAQ Electrical Characteristics (Continued) (-20°C ≤ Ta ≤ 60°C) Symbol Items Conditions Min. Typ. Max. Unit Circuit (1) tSHORT Short detection delay time(2) VDD = 3.6V, VRSENS = 0V → 1V V- = VRSENS 140 280 560 µs F VSHORT2 Short detection voltage 2 Detect rising edge of V- pin voltage VDD = 3.6V, VRSENS = 0V VDD-1.9 VDD-1.45 VDD-1.0 V F VREL3 Discharge overcurrent release voltage Detect falling edge of V- pin voltage VDD = 3.6V, VRSENS = 0V 0.706×VDD -0.15 0.706 ×VDD 0.706×VDD +0.15 V F RSHORT Discharge overcurrent release resistance VDD = 3.6V, V- = 2.662V 5 9.5 15 kΩ F tVREL3 Discharge overcurrent release delay time VDD = 3.6V, V- = 3.6V → 0V VRSENS = 0 V 4.25 8.5 17 ms F VDET4 Charge overcurrent detection voltage Detect falling edge of RSENS pin voltage VDD = 3.6 V, V- = VRSENS VDET4 -0.003 VDET4 VDET4 +0.003 V G tVDET4 Charge overcurrent detection delay time VDD = 3.6 V, VRSENS = 0V → -0.5V V- = VRSENS 10 17 25 ms G tVREL4 Charge overcurrent release delay time VDD=3.6V, V- = -0.5V → 1V V- = VRSENS 2 4 8 ms G VDS SEL1 pin “High” input voltage VDD = 3.6 V -2.7 -2.0 -1.2 V M VOL1 DOUT Nch. ON voltage IOL = 50µA, VDD = 4.55 V 0.4 0.5 V H VOH1 DRAIN Nch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V I VOL2 CB1 Nch. ON voltage IOL = 50µA, VDD = 1.9 V 0.2 0.5 V J VOH2 CB2 Nch. ON voltage IOH = -50µA, VDD = 3.9 V 3.4 3.7 V K IDD Supply current VDD = 3.9 V, V- = 0 V 3 8 µA L ISTANDBY Standby current VDD = 1.9 V 0.6 µA L Test Circuits (1) Refer to TEST CIRCUITS for detail information. (2) Short release delay time is the same value as tVREL3. V V OSCILLOSCOPE VDD DOUT COUT VSS RSENS A B V VDD VSS COUT RSENS

NO.EA-392-181115 C VDD VSS COUT RSENS D V VDD VSS DOUT RSENS E VDD VSS DOUT RSENS F V A VDD VSS DOUT RSENS H V A VDD VSS COUT RSENS I V A VDD VSS COUT RSENS J V A VDD VSS DOUT RSENS K V A VDD VSS DOUT RSENS L A VDD VSS RSENS G V VDD VSS COUT RSENS

NO.EA-392-181115 OPERATION Overcharge Detection, VD1 The VD1 monitors VDD pin voltage during charge. When the VDD pin voltage crosses overcharge detector threshold (VDET1) (1), the VD1 can sense overcharge and the output of COUT pin becomes “L” and stop charging by turning off the external Nch-MOSFET. After detecting overcharge, when the voltage of VDD pin is equal or less than the released voltage from overcharge (VREL1) (1), or when the VDD voltage is less than the overcharge detector threshold (V DET1) (1), if the charger is removed, VD1 is released, then the output level of COUT becomes “H” and by turning on the external Nch-MOSFET, the battery charger is ready to work again. However, depending on the characteristics of external components such as MOSFETs, release conditions may be not enough and a kind of load must be set to release the overcharge. When the Input level of V DD pin is equal or more than overcharge detector threshold, and while a charger is disconnected from the battery pack, if a load system is connected to the battery pack, the output level of COUT pin is “L”. However, load current can be drawn through a parasitic diode of an external Nch- MOSFET. Then, when the voltage level of VDD pin becomes lower than overcharge detector threshold, the output level of COUT pin becomes “H”. Output delay time for over-charge detect and released overcharge is internally fixed respectively. Although the VDD pin voltage goes up to a higher level than overcharge detector threshold within the output delay time (t VDET1) (1), VD1 would not work for detecting overcharge. If the action for VD1 to release is done and the condition returns to the initial one within the output delay time (t VREL1) (1), VD1 cannot be released. A level shifter is built in a buffer driver for the COUT pin, therefore, the “L” level is equal to the voltage level of V- pin. The output type of COUT pin is CMOS type and its output level is in between VDD and V-. Overdischarge Detection, VD2 The VD2 monitors a VDD pin voltage during discharge. When the VDD pin voltage crosses the overdischarge detector threshold (V DET2) (1) from a high level to a lower level than V DET2, the VD2 senses overdischarge and stop discharge by turning off an external Nch- MOSFET. To reset the VD2 with the DOUT pin level being “H” again after detecting overdischarge, if VDD pin voltage is equal or less than overcharge detector threshold, a charge current flows through a parasitic diode of the external Nch MOSFET. After that, when VDD pin voltage is more than overdischarge threshold, DOUT pin becomes "H", and by tuning on the external Nch MOSFET, discharge is possible. In the case that a charger is connected to the battery pack, and V DD level is more than overdischarge detector threshold, the output level of DOUT becomes “H” immediately. Without connecting a charger, if VDD pin voltage is equal or more than the released voltage from overdischarge (VREL2) (1), the output level of DOUT becomes “H”. When a cell voltage is equal to 0V, connecting a charger to the batt ery pack makes COUT pin become "H" and the system is allowable for charge while the voltage of the charger is more than the maximum limit of the minimum operating voltage (VST) (1) for 0V charge. An output delay for overdischarge detection (tVDET2) (1) is fixed internally. Although the voltage of VDD becomes equal or less than overdischarge detector threshold and if it becomes higher than overdischarge detector threshold within output delay time, overdischarge detector does not work. Output delay time for release from overdischarge (t VREL2) (1) is also set internally. After detecting overdischarge by VD2, supply current would The output type of DOUT pin is CMOS type and its output level is in between VDD and VSS. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”.

NO.EA-392-181115 Discharge overcurrent detection / Short-circuit protection, VD31 and VD32 While charge and discharge are acceptable with the battery pack, current flows through an external sense resistance and the generated drop voltage by the current is detected as RSENS pin voltage, VD3 monitors the voltage level of RSENS pin. In the cause of such as the external short circuit, if the voltage level of RSENS pin may become equal or more than the discharge overcurrent detect ion voltage (V DET3) (1) and less than the short detector threshold (V SHORT) (1), the discharge over current detect ion works. When the voltage level of RSENS pin becomes equal or more than the short detector threshold voltage, the short circuit protector works and the output level of DOUT pin becomes “L”, and by turning off an external N-channel MOSFET, VD3 protects against flowing extremely large current into the circuit. An output delay time for the discharge over current detection is internally fixed. Even if the voltage of RSENS pin becomes equal or more than the discharge overcurrent detection voltage and less than the short detector threshold (V SHORT) (1), if the RSENS pin voltage becomes less than the overcurrent detection voltage within the output delay time (tVDET3) (1), the overcurrent detection does not work. Even if RSENS pin becomes equal or more than the short circuit detector threshold, if RSENS pin becomes lower than the short detector threshold within the short detector delay time (t SHORT) (1), the short detector does not work. Output delay time for release from discharge overcurrent, short circuit is also set internally (tVREL3) (1). The V- pin has a built -in pull down resistor connected to the V SS pin. After a discharge overcurrent or short circuit protection is detected, by removing a cause of overcurrent or external short circuit, the voltage level of V- is pulled down through the resistor for release from overcurrent to the VSS level. While charge and discharge are acceptable for the battery pack, or normal mode, the resistor is inactive. Then, when the voltage level of V- pin becomes equal or less than the released voltage from discharge overcurrent (V REL3) (1), both protection circuits are released automatically. Resistor for release from excess discharge current is active when discharge overcurrent or short circuit is detected. V- pin voltage is repres ented by the equation below when V -pin is pulled down by discharge overcurrent or short detecting. V DD : Input Voltage (Cell Voltage) *NOTE22 RSHORT : Internal resistance of V- pin when it is pulled down (1) R2 : External resistor between Pack minus and V - pin (2) RL : Resistance of load between Pack plus and Pack minus (2) Output delay time for discharge overcurrent is necessarily set shorter than output delay time for over-discharge. Therefore, if discharge overcurrent is detected, and at the same time, V DD pin voltage becomes lower than overdischarge detection voltage level, discharge overcurrent detection is predominant. By disconnecting load from the battery pack, the battery pack is automatically released from overcurrent state. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”. (2) Indicates the value shown in the table of “[8] Technical Notes”. DD shortL short VR R R RV + +=−

NO.EA-392-181115 Charge overcurrent detection, VD4 While charge and discharge are acceptable with the battery pack, VD4 senses RSENS pin voltage. For example, if the battery pack is charged by an inappropriate charger, overcurrent flows through an external resistance and the generated voltage drop is monitored as RSENS pin voltage, and the RSENS pin voltage becomes equal or less than the charge overcurrent detector threshold (V DET4) (1), then, the output of COUT pin becomes “L”, and VD4 protects against flowing excess current in the circuit by turning off the external Nch MOSFET. Output delay of the charge overcurrent is internally fixed. (t VDET4) (1) Even the voltage level of RSENS pin becomes equal or lower than the charge overcurrent detection voltage, if the voltage is higher than the VD4 threshold within the delay time, the charge overcurrent state is not detected. Output delay time for release from charge overcurrent is also set internally (tVREL4) (1). VD4 can be released by disconnecting the abnormal charger. Delay time in short-circuit mode When the COUT is "H", the output delay time of overcharge, and overdischarge can be shorter than those setting values by forcing equal or lower than the delay shortening mode detection voltage (VDS2 Typ. -2.0V) and more than -3.0V to V- pin. (1) Indicates the value shown in the table of “[5] Electrical Characteristics”.

NO.EA-392-181115 Timing Charts Overcharge voltage and Overcharge current V DET1 V DD C OUT V DD V DD V DET32 V SS V DET4 tV DET1 Connect Charger Disconnect Charger tV REL1 tV DET1 Connect Charger Connect Load tV REL1 tV DET4 t t Charge/ Discharge Current 0 t t Excess Charge Current Disconnect Charger & Connect Load tV REL4 R SENS V DD V DET32 V SS V DET4 t V REL1 Overcharge Timing Diagram

NO.EA-392-181115 Overdischarge, Discharge overcurrent, and Short-circuit V DET2 V DD D OUT V DD V SS V DD V DET32 V SS V DET4 Connect Load tV REL2 tV DET2 Connect Charger Removing abnormal load t t Charge/ Discharge Current t t tV DET31 or 32 tV DET2 tV REL2 Excess discharge Current Short VREL3 tshort tV REL3 tV REL3 R SENS V DD V DET32 V SS V DET4 Vshort t V REL2 V DET31 or V DET31 or Overdischarge, Discharge Overcurrent, and Short-circuit Timing Diagram

NO.EA-392-181115

APPLICATION INFORMATION

Typical Application Circuit VDD COUT DOUT VSS 0.1µF 1kΩ 330Ω R5610L RVDD CVDD RV- RSENS RSENS 5mΩ Pack plus Pack minus R5610LxxxAx Typical Application Circuit External Components Symbol Min. Typ. Max. Resistor RVDD (1) 330Ω 1kΩ RV- (1) - 1kΩ 1.3kΩ RSENS - 5mΩ 20mΩ Capacitor CVDD 0.01µF 0.1µF 1µF (1) The total resistance of RVDD and RV must be 1kΩ or more.

NO.EA-392-181115 Technical Notes on the Selection Components

• The voltage fluctuation is stabilized with RVDD and CVDD. If a RVDD is too large, by the conduction current at detection, the detection voltage rises. Therefore, it is recommended to use a resistor of 1kΩ or less for RVDD and a capacitor of 0.01 µF to 1.0 µF for CVDD in order to stabilize the operation.
• R VDD and RV- serve as a current limit resistor when the battery pack is charged with reversed polarity or a voltage of the connected charger is more than the absolute maximum rating. When using a small resistor for RVDD and RV-, the device’s power dissipation might be exceeded. Therefore, a total of RVDD and RV- must be 1kΩ or more. When using a large resistor for RV-, the charger might not be released by re-connecting to the battery pack after the overdischarge detection. Therefore, R V- must be 1.3 kΩ or less. Production variation and temperature properties are included in the value. RSENS is a resistor for sensing an excess current. If the resistance value is too large, power loss becomes also large. By the excess current, if the RSENS is not appropriate, the power loss may be beyond the power dissipation of R SENS. Ch oose an appropriate RSENS according to the cell specification.
• The typical application circuit diagrams are just examples. This circuit performance largely depends on the PCB layout and external components. In the actual application, fully evaluation is necessary.
• If the positive terminal and the negative terminal of the battery pack are short even though the device has the short protection circuit, a large current may flow through the FET during the delay time until detecting the short circuit. Therefore, select an appropriate FET with large enough current capacitance in order to endure the large current during the delay time.

NO.EA-392-181115 Selection of External FET Short mode is detected by the current base or the relation between V DD at short and total on resistance of external MOSFETs for COUT and DOUT. If short must be detected by the current base determined by V SHORT1, VSHORT2, and R3, the next formula must be true, otherwise, the short current limit becomes (VSHORT2) / (R3 + RSS (on)) Vshort1 Rss(on) + R3 Vshort2 ≥ VSHORT1 = Threshold value of detecting short circuit using RSENS terminal (V) VSHORT2 =Threshold value of detecting short circuit using V- terminal (V) R3 = External current sense resistance (Ω) RSS (on) = external MOSFETs’ total ON resistance (Ω) Notes: in case of the short mode is specified at short current determined by the relation between R3 and VSHORT value, Example: As the RSENS, in case that the 3 mΩ is selected as R3 and if the V DD* becomes 3.3V, to detect short at 26.7A with Vshort1 = 0.080V and Vshort2=VDD-1.45, the RSS (on) must be 66mΩ or lower. Otherwise, according to the RSS (on), short current limit is lower than expected.

PACKAGE DIMENSIONS DFN-1816-6 Ver. A i

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